In order to resolve the issue of tremendous energy consumption in conventional artificial intelligence, hardware-based neuromorphic system is being actively studied. Although various synaptic devices for the system have been proposed, they have shown...
The application of GaN HEMTs on silicon substrates in high-voltage environments is significantly limited due to their complex buffer layer structure and the difficulty in controlling wafer warpage. In this work, we successfully fabricated GaN power H...
Based on LAMMPS molecular dynamics simulation of nano-silica(nano-SiO2) and asphalt molecular motion trajectory in the ultrasonic environment, the nano-SiO2 modified asphalt mixed model was proposed, and then the ultrasonic vibration process was simu...
SiC is a material with excellent mechanical and thermal properties but with a high production cost. Obtaining SiC by reactive infiltration is an attractive method with a much lower cost than the traditional sintering process. However, the reactive in...
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and o...
The high-temperature composite phase change materials (HCPCMs) were prepared from solid waste blast furnace slag (BFS) and NaCl-KCl binary eutectic salt to achieve efficient and cost-effective utilization. To ensure good chemical compatibility with c...
Si-based photonics has garnered considerable attention as a future device for complementary metal–oxide–semiconductor (CMOS) computing. However, few studies have investigated Si-based light sources highly compatible with Si ultra large-sc...
The first key point to the successful pollination and fertilization in plants is the pollen-pistil interaction, referring to the cellular and molecular levels, which mainly involve the haploid pollen and the diploid pistil. The process is defined as...
As a leading provider of sensing solutions ams AG is developing semiconductor sensors in a wide variety of fields. One of the key competences of ams AG lies in optical sensing. To widen the company’s portfolio in this field we have been developing pr...
Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si3N4) provides...
In this study, we investigated the synaptic functions of TiN/Ti/TiO2/SiOx/Si resistive random access memory for a neuromorphic computing system that can act as a substitute for the von-Neumann computing architecture. To process the data efficiently,...
Si whiskers grown by Ni-Metal-Induced-Lateral-Crystallization (Ni-MILC) were grown at 413 °C, intentionally below the threshold for Solid State Crystallization, which is 420 °C. These whiskers have significant common characteristics with whiskers gro...
The monolithic integration of gallium phosphide (GaP), with its green band gap, high refractive index, large optical non-linearity, and broad transmission range on silicon (Si) substrates, is crucial for Si-based optoelectronics and integrated photon...
The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-micr...
Multimode VCSELs coupled into waveguides can be a practical path toward realizing commercially viable photonic interposer chips. The experimental coupling of multimode VCSEL light to a non-silicon waveguide fabricated using a CMOS-compatible process...
In this paper we report on a thermoelectric generator (TEG) using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al. The “hot” contacts of the thermocouple...
A rubber composite was prepared by using methyltriethoxysilane (MTES) to modify silica (SiO2) and epoxidized eucommia ulmoides gum (EEUG) as rubber additives to endow silica with excellent dispersion and interfacial compatibility under the action of...
Silicon photonics is one of the most prominent technology platforms for integrated photonics and can support a wide variety of applications. As we move towards a mature industrial core technology, we present the integration of silicon nitride (SiN) m...
In this paper, we demonstrate a fabrication process for large area (2 mm × 2 mm) fishnet metamaterial structures for near IR wavelengths. This process involves: (a) defining a sacrificial Si template structure onto a quartz wafer using deep-UV lithog...
Complementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at...
We focus on ozone (O3) detection at ambient temperature by Zinc Oxide (ZnO) nanoparticles (NPs) deposited on Si/SiO2 by spin coating from colloidal solutions as sensitive layers for air quality monitoring. We establish that at room temperature using...
In this paper, a novel silicon carbide (SiC) insulated gate bipolar transistor (IGBT) with a 4H–SiC/Si heterojunction in the buffer layer (HBL) is proposed to improve the turn–off characteristic. Compared with the conventional 4H–Si...
With the advantages of lower capacitance, faster operation and smaller size, the amorphous silicon antifuse is very promising for high-speed and high-density FPGA. However, the leakage current of the conventional amorphous silicon antifuse in the off...
We have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO2 with control of high–selective chemical–vapor deposition and applied them to an active layer of ligh...
A hybrid polymer of SiO2@Tb3+(poly(ethylene terephthalate)-tetraglycol)3 phenanthroline (SiO2@Tb3+(PET–TEG)3Phen) was synthesized by mixing of inorganic SiO2 nanoparticles with polymeric segments of PET–TEG, whereas PET–TEG was achi...
To achieve a preferable compatibility between liquid silicone rubber (LSR) and cable main insulation in a cable accessory, we developed SiC/LSR nanocomposites with a significantly higher conductivity nonlinearity than pure LSR, whilst representing a...
All-solid-state lithium-ion batteries (ASSLBs) are attractive energy storage devices because of their excellent gravimetric and volumetric capacity and ability to supply high power rates. Porous silicon (Si) is a promising material for an anode in li...
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold low...
In this article, we present the design, fabrication, and characterization of a thermopile infrared sensor array (TISA) pixel. This TISA pixel is composed of a dual-layer p+/n- poly-Si thermopile with a closed membrane and an n-channel metal oxide sem...
Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of a...
CrSi
The development of low-temperature piezoresistive materials provides compatibility with standard silicon-based MEMS fabrication processes. Additionally, it enables the use of such material in flexible substrates, thereby expanding the potential for v...
Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A tr...
Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2...
Silicon nanowires (Si NWs) are emerging as an innovative building block in several fields, such as microelectronics, energetics, photonics, and sensing. The interest in Si NWs is related to the high surface to volume ratio and the simpler coupling wi...
This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in prev...
In this study, we fabricated high-performance polyethylene composites by constructing SiO2@silane coupling agent (γ-methylacryloxypropyl trimethoxysilane) and SiO2@polydopamine (PDA) double-layer structures on a magnesium oxysulfate whisker sur...
We report a lateral β-Ga2O3 MOSFET incorporating a simple Si3N4 terminal structure for electric-field management. The main contribution of this work is the demonstration that this process-compatible terminal design can enhance the breakdown perf...
A low-temperature post-processing Al-migration module is used to achieve separate absorption, charge, and multiplication (SACM) functionality in vertical Ge-on-Si photodiodes without dedicated charge-layer formation by implantation or epitaxy. During...
Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based o...
Silicon (Si), the cornerstone semiconductor in the micro-electronics industry, can provide a cost-efficient platform with mature technologies for photodetection in visible and near-infrared regions. However, its intrinsic properties, such as a narrow...
We report a CMOS-compatible ferroelectric memristor based on a TiN/AlScN/n+ Si metal ferroelectric semiconductor (MFS) structure, fabricated entirely via low-temperature sputtering processes. The ultrathin AlScN film exhibits robust ferroelectricity...
The catalytic methanation of CO2 via the strongly exothermic equilibrium Sabatier reaction requires the development of structured catalysts with enhanced mass- and heat-transfer features to limit hot-spot formation, avoid catalyst deactivation, and c...
Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interest...
The photocatalytic degradation and adsorption of the oxamyl pesticide utilizing a nano-HTiO2@activated carbon-amorphous silica nanocomposite catalyst (HTiO2@AC/SiO2). Sol-gel Synthesis was used to produce HTiO2@AC/SiO2, which was examined using Scann...
Pollination is a crucial stage in plant reproductive process. The self-compatibility (SC) and self-incompatibility (SI) mechanisms determined the plant genetic diversity and species survival. D. chrysanthum is a highly valued ornamental and tradition...
Optical resonators are fundamental building-blocks for the development of Si-photonics-integrated circuits, as tunable on-chip optical filters. In addition to the specific spectral shape, which may vary according to a particular application, extremel...
The detection of infrared radiation is of great interest for a wide range of applications, such as absorption sensing in the infrared spectral range. In this work, we present a CMOS compatible pyroelectric detector which was devised as a mid-infrared...
Si-based group III-V material enables a multitude of applications and functionalities of the novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic properties and compatibility with the mature Si CMOS process technolog...
Perhydropolysilazane (PHPS) has attracted considerable attention as a versatile precursor for solution-processed silicon-based materials because of its carbon-free backbone, high chemical reactivity, and compatibility with low-temperature processing....
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