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Article

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

1
Research and Education Center “Physics of Solid State Nanostructures”, National Research Lobachevsky State University of Nizhny Novgorod, 603022 Nizhny Novgorod, Russia
2
Department of Information Technologies, Vladimir State University, 600000 Vladimir, Russia
3
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea
4
Dipartimento di Fisica e Chimica “Emilio Segrè”, Group of Interdisciplinary Theoretical Physics, Università degli Studi di Palermo and CNISM, Unità di Palermo, I-90128 Palermo, Italy
*
Author to whom correspondence should be addressed.
Academic Editors: Alex Serb and Adnan Mehonic
J. Low Power Electron. Appl. 2022, 12(1), 14; https://doi.org/10.3390/jlpea12010014
Received: 21 October 2021 / Revised: 24 January 2022 / Accepted: 28 February 2022 / Published: 2 March 2022
(This article belongs to the Special Issue Low Power Memory/Memristor Devices and Systems)
Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on the resistive switching phenomenon, which in most cases are fabricated in the form of metal–insulator–metal structures. At the same time, the demand for compatibility with the standard fabrication process of complementary metal–oxide semiconductors makes it relevant from a practical point of view to fabricate memristive devices directly on a silicon or SOI (silicon on insulator) substrate. Here we have investigated the electrical characteristics and resistive switching of SiOx- and SiNx-based memristors fabricated on SOI substrates and subjected to additional laser treatment and thermal treatment. The investigated memristors do not require electroforming and demonstrate a synaptic type of resistive switching. It is found that the parameters of resistive switching of SiOx- and SiNx-based memristors on SOI substrates are remarkably improved. In particular, the laser treatment gives rise to a significant increase in the hysteresis loop in IV curves of SiNx-based memristors. Moreover, for SiOx-based memristors, the thermal treatment used after the laser treatment produces a notable decrease in the resistive switching voltage. View Full-Text
Keywords: memristor; silicon oxide; silicon nitride; SOI technology; resistive switching; electrical characteristics; laser treatment; thermal treatment memristor; silicon oxide; silicon nitride; SOI technology; resistive switching; electrical characteristics; laser treatment; thermal treatment
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MDPI and ACS Style

Koryazhkina, M.N.; Filatov, D.O.; Tikhov, S.V.; Belov, A.I.; Korolev, D.S.; Kruglov, A.V.; Kryukov, R.N.; Zubkov, S.Y.; Vorontsov, V.A.; Pavlov, D.A.; Tetelbaum, D.I.; Mikhaylov, A.N.; Shchanikov, S.A.; Kim, S.; Spagnolo, B. Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments. J. Low Power Electron. Appl. 2022, 12, 14. https://doi.org/10.3390/jlpea12010014

AMA Style

Koryazhkina MN, Filatov DO, Tikhov SV, Belov AI, Korolev DS, Kruglov AV, Kryukov RN, Zubkov SY, Vorontsov VA, Pavlov DA, Tetelbaum DI, Mikhaylov AN, Shchanikov SA, Kim S, Spagnolo B. Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments. Journal of Low Power Electronics and Applications. 2022; 12(1):14. https://doi.org/10.3390/jlpea12010014

Chicago/Turabian Style

Koryazhkina, Maria N., Dmitry O. Filatov, Stanislav V. Tikhov, Alexey I. Belov, Dmitry S. Korolev, Alexander V. Kruglov, Ruslan N. Kryukov, Sergey Yu. Zubkov, Vladislav A. Vorontsov, Dmitry A. Pavlov, David I. Tetelbaum, Alexey N. Mikhaylov, Sergey A. Shchanikov, Sungjun Kim, and Bernardo Spagnolo. 2022. "Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments" Journal of Low Power Electronics and Applications 12, no. 1: 14. https://doi.org/10.3390/jlpea12010014

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