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A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride

Carinthian Tech Research AG, 9524 Villach, Austria
Infineon Technologies Austria AG, 9500 Villach, Austria
Institute for Microelectronics and Microsensors, Johannes Kepler University Linz, 4040 Linz, Austria
Author to whom correspondence should be addressed.
Sensors 2019, 19(11), 2513;
Received: 28 March 2019 / Revised: 24 May 2019 / Accepted: 29 May 2019 / Published: 31 May 2019
(This article belongs to the Special Issue Infrared Sensors and Technologies)
PDF [2117 KB, uploaded 11 June 2019]


The detection of infrared radiation is of great interest for a wide range of applications, such as absorption sensing in the infrared spectral range. In this work, we present a CMOS compatible pyroelectric detector which was devised as a mid-infrared detector, comprising aluminium nitride (AlN) as the pyroelectric material and fabricated using semiconductor mass fabrication processes. To ensure thermal decoupling of the detector, the detectors are realized on a Si3N4/SiO2 membrane. The detectors have been tested at a wavelength close to the CO2 absorption region in the mid-infrared. Devices with various detector and membrane sizes were fabricated and the influence of these dimensions on the performance was investigated. The noise equivalent power of the first demonstrator devices connected to a readout circuit was measured to be as low as 5.3 × 10 9 W / Hz . View Full-Text
Keywords: pyroelectric detector; silicon photonics; mid-infrared detector pyroelectric detector; silicon photonics; mid-infrared detector

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Ranacher, C.; Consani, C.; Tortschanoff, A.; Rauter, L.; Holzmann, D.; Fleury, C.; Stocker, G.; Fant, A.; Schaunig, H.; Irsigler, P.; Grille, T.; Jakoby, B. A CMOS Compatible Pyroelectric Mid-Infrared Detector Based on Aluminium Nitride. Sensors 2019, 19, 2513.

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