Silicon Nanodevices

Dear Colleagues,

Nanodevices have attracted great attention in recent years due to their low power consumption and fast operation in electronics and photonics as well as high sensitivity in sensor applications. As an example, in following Moore’s law, the CMOS has undergone an evolution in design and architecture in integrated circuits. In principle, scaling down of the device structure can be performed by using advanced processing, but there are always different issues, e.g., concerning contact resistance, defects, and reliability, which can affect device performance. The current technology developments drive nanodevices towards 3D integration, and the merging of electronics and photonics is inevitable. Such designs will be the ultimate goal of nanotechnology in the future.  Therefore, this Special Issue will focus on the following scientific fields:

• Fabrication and characterization of group IV nanostructures, nanodevices, and nanosensors
• Carrier transport in nanodevices
• Optoelectronic materials and nanodevices using Si-based heterostructures and nanostructures
• Integration of photonics with Si CMOS technology
• Strain bandgap engineering and carrier transport in CMOS
• Si-based optical modulators, switches, and detectors
• Si-based waveguide technology and nanodevices
• Luminescence in Si-based materials
• Integrated waveguide sensing
• Nanomaterials for life science applications
• Nanoscale biosensors
• Defect engineering and characterization

This Special Issue creates unique knowledge for the readers in nanoscale physics, device processing, and material properties. 

Prof. Dr. Henry Radamson
Prof. Dr. Guilei Wang
Guest Editors

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