Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection
AbstractComplementary metal-oxide-semiconductor (CMOS)-compatible Ar+-implanted Si-waveguide p-i-n photodetectors operating in the mid-infrared (2.2 to 2.3 µm wavelengths) are demonstrated at room temperature. Responsivities exceeding 21 mA/W are measured at a 5 V reverse bias with an estimated internal quantum efficiency of 3.1%–3.7%. The dark current is found to vary from a few nanoamps down to less than 11 pA after post-implantation annealing at 350 °C. Linearity is demonstrated over four orders of magnitude, confirming a single-photon absorption process. The devices demonstrate a higher thermal processing budget than similar Si+-implanted devices and achieve higher responsivity after annealing up to 350 °C. View Full-Text
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Souhan, B.; Chen, C.P.; Lu, M.; Stein, A.; Bakhru, H.; Grote, R.R.; Bergman, K.; Green, W.M.J.; Osgood, R.M. Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection. Photonics 2016, 3, 46.
Souhan B, Chen CP, Lu M, Stein A, Bakhru H, Grote RR, Bergman K, Green WMJ, Osgood RM. Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection. Photonics. 2016; 3(3):46.Chicago/Turabian Style
Souhan, Brian; Chen, Christine P.; Lu, Ming; Stein, Aaron; Bakhru, Hassaram; Grote, Richard R.; Bergman, Keren; Green, William M.J.; Osgood, Richard M. 2016. "Ar+-Implanted Si-Waveguide Photodiodes for Mid-Infrared Detection." Photonics 3, no. 3: 46.
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