Photodetectors and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 31 December 2025 | Viewed by 862

Special Issue Editor


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Guest Editor
College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, China
Interests: thermoelectrics; photodetectors; transistors

Special Issue Information

Dear Colleagues,

Photodetectors, with their versatile optical sensitivity, serve as pivotal components in advancing modern technologies, spanning image sensors, biomedical diagnostics, remote sensing, optical communications, human–machine interfaces, and advanced machine vision systems. Recent advances in neuromorphic computing have driven the emergence of photodetector-integrated synaptic devices, including optical synaptic diodes, optical synaptic transistors, and photoelectric memristors, which mimic neural plasticity for energy-efficient artificial intelligence architectures. Concurrently, breakthroughs in novel materials (e.g., organic semiconductors, 2D semiconductors, perovskites, and organic–inorganic hybrids) and nanofabrication techniques have expanded device functionalities while addressing scalability challenges. Particularly, flexible and stretchable photodetectors are revolutionizing wearable electronics and conformal biointerfaces, offering unprecedented compatibility with curvilinear surfaces and dynamic environments.

This Special Issue invites cutting-edge contributions (research papers, short communications, and review articles) elucidating the following:

  1. Material synthesis strategies‌ for high-performance photodetectors and photoelectric memory devices;
  2. Device engineering approaches‌ enabling multiplexed sensing, adaptive responsivity, and mechanical compliance;
  3. System-level applications‌ in neuromorphic computing, adaptive optics, soft robotics, and implantable health monitors.

By bridging fundamental research with industrial translation, this collection aims to catalyze innovations that address the growing demand for multifunctional, durable, and cost-effective optoelectronic solutions across academia and industry.

Dr. Jinfeng Han
Guest Editor

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Keywords

  • photodetectors
  • flexible devices
  • materials
  • applications

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Published Papers (1 paper)

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Research

10 pages, 4230 KiB  
Article
Enhanced UVC Responsivity of Heteroepitaxial α-Ga2O3 Photodetector with Ultra-Thin HfO2 Interlayer
by SiSung Yoon, SeungYoon Oh, GyuHyung Lee, YongKi Kim, SunJae Kim, Ji-Hyeon Park, MyungHun Shin, Dae-Woo Jeon and GeonWook Yoo
Micromachines 2025, 16(7), 836; https://doi.org/10.3390/mi16070836 - 21 Jul 2025
Viewed by 720
Abstract
In this study, the influence of HfO2 interlayer thickness on the performance of heteroepitaxial α-Ga2O3 layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO2 interlayer enhances the interface quality and reduces the density of interface traps, thereby [...] Read more.
In this study, the influence of HfO2 interlayer thickness on the performance of heteroepitaxial α-Ga2O3 layer-based metal–insulator–semiconductor–insulator–metal (MISIM) ultraviolet photodetectors is examined. A thin HfO2 interlayer enhances the interface quality and reduces the density of interface traps, thereby improving the performance of UVC photodetectors. The fabricated device with a 1 nm HfO2 interlayer exhibited a significantly reduced dark current and higher photocurrent than a conventional metal–semiconductor–metal (MSM). Specifically, the 1 nm HfO2 MISIM device demonstrated a photocurrent of 2.3 μA and a dark current of 6.61 pA at 20 V, whereas the MSM device exhibited a photocurrent of 1.1 μA and a dark current of 73.3 pA. Furthermore, the photodetector performance was comprehensively evaluated in terms of responsivity, response speed, and high-temperature operation. These results suggest that the proposed ultra-thin HfO2 interlayer is an effective strategy for enhancing the performance of α-Ga2O3-based UVC photodetectors by simultaneously suppressing dark currents and increasing photocurrents and ultimately demonstrate its potential for stable operation under extreme environmental conditions. Full article
(This article belongs to the Special Issue Photodetectors and Their Applications)
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