In this work, Gallium Nitride (GaN)-based p-i-n diodes were designed using a computer aided design (TCAD) simulator for realizing a betavoltaic (BV) cell with a high output power density (Pout). The short-circuit current density (JSC) and open-circui...
Due to the absorption of opaque Si substrates, the luminous efficiency of GaN-based light-emitting diodes (LEDs) on Si substrates is not high. So, in this work, we insert AlN/GaN distributed Bragg reflectors (DBRs) to improve the light output of GaN-...
Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this art...
The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decre...
Remote sensing allows fast assessment of crop monitoring over large areas; however, questions regarding uncertainty in crop parameter prediction and application to nitrogen (N) fertilization remain open. The objective of this study was to optimize of...
Compared with mercury lamps, AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) possess many distinctive advantages, including their being pollution-free, their long lifespan, their low operating voltage, their compact size, and their high...
In this paper, new single/double-layer N-way Wilkinson power dividers (WPDs) were designed by using slow-wave structures such as narrow-slit-loaded and meandered transmission lines. For size reduction, the slit-loaded and meandered lines were used in...
N,N-dimethyl-4-nitroaniline is a piezoelectric organic superplastic and superelastic charge transfer molecular crystal that crystallizes in an acentric structure. Organic mechanical flexible crystals are of great importance as they stand between soft...
Diode-clamped multi-level converters have DC-side capacitors in series, which will lead to the unbalance of DC-side capacitor voltage, the distortion of the output waveform, the increase of total harmonic distortion (THD), and even the damage of swit...
Through a detailed study of nondestructive controlled quantum teleportation (NCQT) with two outputs in three-dimensional and high-dimensional Hilbert spaces, we propose an NCQT scheme that synchronously and probabilistically teleports N arbitrary unk...
Nitrogen (N) losses are a major environmental issue. Globally, crop N fertilizer applications are excessive, and N use efficiency (NUE) is low. N loss represents a significant economic loss to the farmer. NUE is difficult to quantify in real time bec...
The characteristics of load-independent constant current (CC) output and zero phase angle (ZPA) operation are required in many scenarios of inductive power transfer (IPT) applications. However, the existing topologies with CC output characteristics u...
Single-walled carbon nanotube (SWCNT) p–n junction thermoelectric generators develop an in-plane temperature difference under uniform heating. They convert it into a voltage with no cold source. This suits maintenance-free Internet-of-Things se...
This study presents a hard-switching full-bridge DC-DC converter with synchronous rectification based on Gallium Nitride (GaN) transistors to evaluate the advantages of GaN devices in power supplies. In comparison to traditional silicon-based devices...
The effect of different SiNx thicknesses on the performance of AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated in this paper. The current, transconductance (Gm), cut-off frequency (fT), maximum oscillation frequency (fmax), powe...
In order to obtain acceptable efficiencies, hard-switching techniques and the converters that implement them must operate at relatively low frequencies (tens of kilohertz), which translate into converters of large size, weight, and volume, and theref...
This study presents a dual-band power amplifier (PA) with two output ports using a simplified three-port, frequency-dividing matching network. The dual-band, dual-output PA could amplify a dual-band signal with one transistor, and the diplexer-like o...
In this paper, we report on an enhancement of mm-wave power performances with a vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a non-intentionally doped GaN channel layer, enabling the prevention of punch-th...
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs...
This letter presents a novel realization of a voltage-mode (VM) first-order all-pass filter (APF) with attractive features. The proposed circuit employs a single readily available six-terminal active device called as universal voltage conveyor (UVC)...
High-resolution remote sensing semantic segmentation requires the joint modeling of local details, global semantics, and height-derived geometric structures, and it provides an important basis for urban object mapping, land-cover analysis, and fine-g...
A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing power amplifier (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are integrated using pHEMT transistors from the O...
A modular multilevel converter (MMC) is an advanced voltage source converter applicable to a wide range of medium and high-voltage applications. It has competitive advantages such as quality output performance, high modularity, simple scalability, an...
To enhance the RF power properties of CMOS-compatible gold-free GaN devices, this work introduces a kind of GaN-on-Si HEMT with a low parasitic regrown ohmic contact technology. Attributed to the highly doped n+ InGaN regrown layer and smooth morphol...
Introduction: Despite decades of research on highly pathogenic avian influenza, especially H5N1, an understanding of the impact of research outputs on policy, the impact of funding and policies, collaboration between authors, and other bibliometric m...
Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in th...
The number of livestock farms decreased by 40% in Europe over the last 10-year period. Stockless organic cropping systems started to dominate in many intensive agricultural regions in Europe. Developing the sustainable management of an organic stockl...
Constant advance in improving the luminous efficacy (ηL) of nitride-based light-emitting diodes (LEDs) plays a critical role for saving measurable amounts of energy. Further development is motivated to approach the efficiency limit for this mater...
This study aims to evaluate the effects of total ionizing dose (TID) radiation on the performance of n−MOSFET current mirrors. We propose an ovel experimental approach to analyze the interaction between charge trapping in the MOSFET gate o...
Low-Voltage DC-DC converters (LDCs) in electric vehicles require high power density and high efficiency operation over the wide range of load and input voltage variations. This paper introduces a novel topology which combines three 1 MHz half-bridge...
The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leak...
In this paper, a highly isolated multiple-input multiple-output (MIMO) antenna array is proposed for fifth-generation (5G) metal frame smartphones. The eight identical small-sized inverted F-shaped folded slots are etched on the metal frame as a MIMO...
In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride on silicon (GaN-on-Si) is presented. The design is based on a three-stage architecture and was i...
A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vap...
This article presents a comprehensive comparative evaluation of a three-phase Three-Level (3L) Flying Capacitor Converter (FCC) and a Stacked Polyphase Bridge Inverter (SPBI), specifically a converter system formed by two Series-Stacked Two-Level thr...
We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled w...
A dual-output voltage reference circuit with two reference voltages of 281 mV (Vref1) and 320.5 mV (Vref2) is presented in this paper. With a novel and precise circuit structure, the proposed circuit, operating in the subthreshold region, integrates...
In this paper, the design, fabrication, and measurements of an S band multi harmonic tuned power amplifier in GaN technology is described. The amplifier has been designed by exploiting second and third harmonic tuning conditions at both input and out...
A novel ground slot-based massive multiple-input multiple-output (MIMO) system with 14 elements for dual-band application of next-generation smartphones is developed. Every single antenna in the array is placed on the borders of a smartphone’s...
This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal out...
Continuing a targeted search for new leading structures with diuretic action among tricyclic derivatives of hydroxyquinolines, which are of interest as potential inhibitors of aldosterone synthase, the synthesis of a series of the corresponding pyrid...
This paper presents an X-band high-power GaN MMIC power amplifier (PA). To balance efficiency, output power, and saturated power flatness, the load-line theory is employed to analyze and validate the power variation trends within an extended continuo...
This paper introduces a gallium nitride (GaN) high electron mobility transistor (HEMT)-based matrix converter for motor friendly drive systems. A fast switching characteristic of the GaN devices causes high dv/dt. This increases the importance of noi...
This paper presents a new low-voltage versatile mixed-mode filter which uses a multiple-input/output differential difference transconductance amplifier (MIMO-DDTA). The multiple-input of the DDTA is realized using a multiple-input bulk-driven MOS tra...
While digital predistortion (DPD) usually targets only the linearity performance of the radio–frequency (RF) power amplifier (PA), this work addresses more than a single PA performance metric exploiting a multi-objective optimization approach....
High-frequency operation enabled by GaN power devices is a promising approach for achieving high power density in dual-active-bridge DC-DC converters. However, as the switching frequency increases, the influence of switching timing parameters on volt...
We investigated hybrid functional transparent conductive electrodes (HFTCEs) composed of indium-tin-oxide (ITO) and silver nanowires (AgNWs) for the enhancement of output efficiency in GaN-based ultraviolet light-emitting diodes (UVLEDs). The HFTCEs...
Potential barriers between the waveguide layer and MQW active region may influence injection efficiency significantly, which is important in improving output characteristics of GaN-based green laser diodes (LDs). In this study, potential barriers and...
In this paper, the conditions of the dip-coating method of SiO2 nanospheres are optimized, and a neatly arranged single-layer SiO2 array is obtained. On this basis, a “top-down” inductively coupled plasma (ICP) technique is used to etch the p-GaN lay...
Faba bean plays a significant role in nitrogen (N) cycling as they fix atmospheric N2 through biological symbiosis (SNF). It has been assumed that soil potential to supply plants with potassium (K) and sulfur (S) is crucial for plant and soil N manag...
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