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Open AccessArticle

Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer

by Huiwen Luo 1,2, Junze Li 1,2,* and Mo Li 1,2,*
1
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621999, China
2
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
*
Authors to whom correspondence should be addressed.
Micromachines 2019, 10(10), 694; https://doi.org/10.3390/mi10100694
Received: 15 September 2019 / Revised: 5 October 2019 / Accepted: 10 October 2019 / Published: 12 October 2019
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications)
The vertical-cavity surface-emitting laser (VCSEL) has unique advantages over the conventional edge-emitting laser and has recently attracted a lot of attention. However, the output power of GaN-based VCSEL is still low due to the large electron leakage caused by the built-in polarization at the heterointerface within the device. In this paper, in order to improve the output power, a new structure of p-type composition-graded AlxGa1−xN electron blocking layer (EBL) is proposed in the VCSEL, by replacing the last quantum barrier (LQB) and EBL in the conventional structure. The simulation results show that the proposed EBL in the VCSEL suppresses the leaking electrons remarkably and contributes to a 70.6% increase of the output power, compared with the conventional GaN-based VCSEL. View Full-Text
Keywords: GaN-based vertical-cavity surface-emitting laser (VCSEL); composition-graded AlxGa1−xN electron blocking layer (EBL); electron leakage GaN-based vertical-cavity surface-emitting laser (VCSEL); composition-graded AlxGa1−xN electron blocking layer (EBL); electron leakage
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MDPI and ACS Style

Luo, H.; Li, J.; Li, M. Improved Output Power of GaN-based VCSEL with Band-Engineered Electron Blocking Layer. Micromachines 2019, 10, 694.

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