An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
Abstract
:1. Introduction
2. Output Impedance Model and Validation
3. Circuit Design
4. Measurement Results
5. Conclusions
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
- Lee, S.; Park, H.; Choi, K.; Kwon, Y. A Broadband GaN pHEMT Power Amplifier Using Non-Foster Matching. IEEE Trans. Microw. Theory Tech. 2015, 63, 4406–4414. [Google Scholar] [CrossRef]
- Couturier, A.M.; Poitrenaud, N.; Serru, V.; Dionisio, R.; Fontecave, J.J.; Camiade, M. 50% High Efficiency X-Band GaN MMIC Amplifier for Space Applications. In Proceedings of the European Microwave Conference, Madrid, Spain, 23–27 September 2018. [Google Scholar]
- Kuhn, J.; Raay, F.V.; Quay, R.; Kiefer, R.; Peschel, D.; Mikulla, M.; Eggebert, M.S.; Bronner, W.; Schlechtweg, M.; Ambacher, O.; et al. Design of X-Band GaN MMICs Using Field Plates. In Proceedings of the 4th European Microwave Integrated Circuits Conference, Rome, Italy, 28–29 September 2009. [Google Scholar]
- Kuhn, J.; Raay, F.V.; Quay, R.; Kiefer, R.; Maier, T.; Stibal, R.; Mikulla, M.; Eggebert, M.S.; Bronner, W.; Schlechtweg, M.; et al. Design of Highly-Efficient GaN X-Band-Power-Amplifier MMICs. In Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), Boston, MA, USA, 7–12 June 2009. [Google Scholar]
- Wohlmuth, W.; Weng, M.H.; Lin, C.K.; Du, J.H.; Ho, S.Y.; Chou, T.Y.; Li, S.M.; Huang, C.; Wang, W.C.; Wang, W.K. AlGaN/GaN HEMT Development Targeted for X-band Applications. In Proceedings of the IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS), Tel Aviv, Israel, 21–23 October 2013. [Google Scholar]
- Schuh, P.; Sledzik, H.; Reber, R.; Fleckenstein, A.; Leberer, R.; Oppermann, M.; Quay, R.; Raay, F.V.; Eggebert, M.S.; Kiefer, R.; et al. GaN MMIC based T/R-Module Front-End for X-band Applications. In Proceedings of the 3rd European Microwave Integrated Circuits Conference, Amsterdam, The Netherlands, 27–28 October 2008. [Google Scholar]
- Chu, C.K.; Huang, H.K.; Liu, H.Z.; Lin, C.H.; Chang, C.H.; Wu, C.L.; Chang, C.S.; Wang, Y.H. An X-Band High-Power and High-PAE PHEMT MMIC Power Amplifier for Pulse and CW Operation. IEEE Microw. Wirel. Compon. Lett. 2008, 18, 707–709. [Google Scholar] [CrossRef]
- Formicone, G.; Burger, J.; Custer, J.; Keshishian, R.; Veitschegger, W. A Study for Achieving High Power and Efficiency based on High Bias Operation in C- and X-band GaN Power Amplifiers. In Proceedings of the IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Anaheim, CA, USA, 14–17 January 2018. [Google Scholar]
- Meng, X.Y.; Yu, C.P.; Liu, Y.N.; Wu, Y.L. Design Approach for Implementation of Class-J Broadband Power Amplifiers Using Synthesized Band-Pass and Low-Pass Matching Topology. IEEE Trans. Microw. Theory Tech. 2017, 65, 4984–4996. [Google Scholar]
- Bent, G.V.D.; Hek, A.P.D.; Bessemoulin, A.; Vliet, F.E.V. Low-Cost High-Efficient 10-Watt X-band High-Power Amplifier. In Proceedings of the IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems, Tel Aviv, Israel, 9–11 November 2009. [Google Scholar]
- Resca, D.; Raffo, A.; Falco, S.D.; Scappaviva, F.; Vadalà, V.; Vannini, G. X-Band GaN Power Amplifier for Future Generation SAR Systems. IEEE Microw. Wirel. Compon. Lett. 2014, 24, 266–268. [Google Scholar] [CrossRef]
- Costrini, C.; Cetronio, A.; Romanini, P.; Breglio, G.; Irace, A.; Riccio, M. 50W X-band GaN MMIC HPA: Effective Power Capability and Transient Thermal Analysis. In Proceedings of the 5th European Microwave Integrated Circuits Conference, Paris, France, 27–28 September 2010. [Google Scholar]
- Costrini, M.; Calori, M.; Cetronio, A.; Lanzieri, C.; Lavanga, S.; Peroni, M.; Limiti, E.; Serino, A.; Ghione, G.; Melone, G. A 20 Watt Micro-strip X-Band AlGaN/GaN HPA MMIC for Advanced Radar Applications. In Proceedings of the 1st European Wireless Technology Conference, Amsterdam, The Netherlands, 27–28 October 2008. [Google Scholar]
- Piotrowicz, S.; Ouarch, Z.; Chartier, E.; Aubry, R.; Callet, G.; Floriot, D.; Jacquet, J.C.; Jardel, O.; Morvan, E.; Reveyrand, T.; et al. 43W, 52% P AE X-Band AlGaN/GaN HEMTs MMIC Amplifiers. In Proceedings of the IEEE/MTT-S International Microwave Symposium (IMS), Anaheim, CA, USA, 23–28 May 2010. [Google Scholar]
- Shin, D.H.; Yom, I.B.; Kim, D.W. X-Band GaN MMIC Power Amplifier for the SSPA of a SAR System. In Proceedings of the IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Seoul, Korea, 30 August–1 September 2017. [Google Scholar]
Parameter | Value | Parameter | Value |
---|---|---|---|
VTH (V) | −2.9 | ft (GHz) | 24.5 |
VBDG (V) | 121 | fmax (GHz) | 75 |
Idmax (mA/mm) | 800 | Pdensity (W/mm) | 5 |
Gm_Peak (mS/mm) | 390 | CMIM (pF/mm2) | 215 |
Reference | Process | Frequency (GHz) | Pout (W) | PAE (%) | Gp (dB) | Stage | Pulse/Duty (μs, %) | Size (mm2) |
---|---|---|---|---|---|---|---|---|
[10] | 0.25 μm GaAs | 8.25–10.25 | 10.7 | 41.4 | 19 | 2 | 3, 3 | 4.41 × 2.5 |
[11] | 0.25 μm GaN | 8.8–10.4 | 14 | 38 | 18 | 2 | 50, 15 | 4.5 × 4.0 |
[12] | 0.5 μm GaN | 8–10.5 | 20 | 35 | 15 | 2 | 100, 25 | 5.0 × 3.2 |
[13] | 0.5 μm GaN | 8.5–9 | 30 | 40 | 14 | 2 | 10, 1 | 5.33 × 3.5 |
[14] | 0.25 μm GaN | 8.5–10.5 | 35 | 40 | 14 | 2 | 20, 10 | 4.5 × 4.0 |
[15] | 0.25 μm GaN | 8.8–10.8 | 40 | 44 | 17 | 2 | 100, 10 | 4.5 × 4.6 |
This work | 0.25 μm GaN | 8–12 | 40 | 44.7 | 22 | 2 | 100, 10 | 3.20 × 3.45 |
© 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Share and Cite
Chen, R.; Li, R.; Zhou, S.; Chen, S.; Huang, J.; Wang, Z. An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model. Electronics 2019, 8, 99. https://doi.org/10.3390/electronics8010099
Chen R, Li R, Zhou S, Chen S, Huang J, Wang Z. An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model. Electronics. 2019; 8(1):99. https://doi.org/10.3390/electronics8010099
Chicago/Turabian StyleChen, Ruitao, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, and Zhiyu Wang. 2019. "An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model" Electronics 8, no. 1: 99. https://doi.org/10.3390/electronics8010099
APA StyleChen, R., Li, R., Zhou, S., Chen, S., Huang, J., & Wang, Z. (2019). An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model. Electronics, 8(1), 99. https://doi.org/10.3390/electronics8010099