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Open AccessArticle

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate

Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 300, Taiwan
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Academic Editor: Dirk Poelman
Materials 2015, 8(4), 1993-1999; https://doi.org/10.3390/ma8041993
Received: 17 February 2015 / Revised: 8 April 2015 / Accepted: 10 April 2015 / Published: 22 April 2015
(This article belongs to the Special Issue Luminescent Materials and Devices)
The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. View Full-Text
Keywords: GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power GaN-based LED; concave patterned sapphire substrate; crystal quality; light output power
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Wu, Y.S.; Isabel, A.P.S.; Zheng, J.-H.; Lin, B.-W.; Li, J.-H.; Lin, C.-C. Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate. Materials 2015, 8, 1993-1999.

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