Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume III

Dear Colleagues,

Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer a greater potential reliability in tougher operating conditions. Furthermore, in this framework, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than previously established wide-bandgap semiconductors, such as GaN and SiC, have been created and are thus referred to as “ultra-wide-bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga₂O₃, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher operation temperatures, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics.

After the success of the first edition edited by Dr. Farid Medjdoub and the second edition edited by Prof. Dr. Giovanni Verzellesi, a third volume of the Special Issue “Wide Bandgap Based Devices: Design, Fabrication, and Applications” is being launched, aiming to collect high-quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. In particular, the following topics are addressed:

• GaN- and SiC-based devices for power and optoelectronic applications;
• Ga₂O₃ substrate development and Ga₂O₃ thin film growth, doping, and devices;
• AlN-based emerging material and devices;
• BN epitaxial growth, characterization, and devices.

Prof. Dr. Alessandro Chini
Dr. Nicolò Zagni
Guest Editors

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