This paper presents two power amplifiers designed for 5G NR n77 and n78 bands. These power amplifiers were fabricated using WINTM Semiconductors’ 0.25 μm GaN/SiC technology and GaAs IPD technology. To achieve a reduction in costs, GaAs IPD t...
This work proposes a comparison among GaN and SiC device main parameters measured with a dedicated and low-cost embedded system, employing an STM32 microcontroller designed to the purpose. The system has the advantage to avoid the use of expensive la...
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order...
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of nor...
This paper will evaluate the surge current robustness of different devices in relation to the active short circuit (ASC). For the purposes of this study, a Si IGBT and its diode, two SiC MOSFETs with different voltage ratings, a SiC JFET, and three G...
A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation l...
In this study, we aimed to propose an optimal structure for an AlGaN/InGaN/GaN/AlGaN/SiC HEMT by investigating how the breakdown voltage varies with the thickness and composition of the InGaN layer. The breakdown voltage was shown to be highly depend...
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the performance of wide-bandgap p-SiC/n-GaN heterojunction double-drift region (...
This work presents a novel Gallium Nitride (GaN) high-electron-mobility transistor (HEMT)-based ultraviolet (UV) photodetector architecture that integrates advanced material and structural design strategies to enhance detection performance and stabil...
This study investigated the effects of a thin aluminum oxynitride (AlOxNy) gate insulator on the electrical characteristics of AlGaN/GaN-on-SiC metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs). The fabricated AlGaN/GaN-on-...
Wide bandgap (WBG) semiconductors such as gallium nitride (GaN) and silicon carbide (SiC) have revolutionized modern power electronics by enabling devices that operate at higher voltages, temperatures, and switching frequencies than their silicon cou...
This paper presents a monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) that is compatible with n257 (26.5–29.5 GHz) and n258 (24.25–27.5 GHz) frequency bands for fifth-generation mobile communications system (5G) a...
This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performan...
Wide-Bandgap (WBG) semiconductors—silicon carbide (SiC) and gallium nitride (GaN)— enable high-power-density conversion, but performance is limited by where heat is generated and how it is removed. This review links device-level loss mech...
From 4G to 5G to 6G, every few years, a new generation of data transmission technology emerges to meet the growing demand for faster and more efficient communication. Artificial intelligence, the Internet of Things and the increasing need for global...
It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a ~2.3% compressive lattice mismatch of the deposited ZnO. The question a...
The monolithic microwave integrated circuit (MMIC) power amplifiers serve an essential and critical role in RF transmit/receive (T/R) modules of phased array radar systems, mobile communication systems and satellite systems. Over recent years, there...
Despite III-nitride and silicon carbide being the materials of choice for a wide range of applications, theoretical studies on their quaternary alloys are limited. Here, we report a systematic computational study on the electronic structural properti...
This paper presents the simulation and experimental results for high-frequency surface acoustic wave (SAW) sensors for humidity detection. The SAW structures with a wavelength of 680 nm are fabricated on GaN/SiC and presented two resonance frequencie...
We investigated the radio frequency (RF) performance of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on silicon carbide substrates, featuring two distinct T-shaped gate structures. A comparative analysis between a silicon nitride (...
This study presents a voltage-controlled oscillator (VCO) in a cross-coupled pair configuration using a multi-tapped switched inductor with two switch-loaded transformers in 0.5 µm GaN technology. Two switch-loaded transformers are placed at th...
Several aspects such as the growth relation between the layers of the GaN/AlN/SiC heterostructure, the consistency of the interfaces, and elemental diffusion are achieved by High Resolution Transmission Electron Microscopy (HR-TEM). In addition, the...
Two-dimensional materials are widely used as a new generation of functional materials for photovoltaic, photocatalyst, and nano-power devices. Strain engineering is a popular method to tune the properties of two-dimensional materials so that performa...
This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous p-n junction to manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and the performance of th...
Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructu...
The growth of nanoscale columnar AlxGa1-xN/AlN heterostructures on the surface of silicon substrates using plasma-activated nitrogen molecular-beam epitaxy was investigated in this work. Silicon substrates include atomic-smooth cSi substrate, Si subs...
N-polar GaN HEMTs feature a natural back-barrier and enable the formation of low-resistance Ohmic contacts, with the potential to suppress short-channel effects and current collapse effects at sub-100 nm gate lengths, rendering them particularly prom...
In our study, for the first time we demonstrate the advantages of using a compliant hybrid substrate of porSi/SiC to grow high-quality ultra-thin nanostructured AlxGa1−xN/GaN heterostructures using molecular beam epitaxy with plasma-activated n...
This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead of depositing SiC layers on the surface of Si using the conventional method, a new method involving the coordinated substitution of atoms (M...
The crystallographic-orientation relationship between GaN crystals grown via hydride vapor phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron backscatter diffraction (EBSD) Kikuchi diffraction patterns and pole figures to i...
Bias temperature instability (BTI) degradation is commonly described using empirical power-law kinetics; however, extraction of the time exponent and projection of lifetime remain highly sensitive to baseline definition and data representation. In co...
Integrating photovoltaic applications within urban environments creates the need for more compact and efficient power electronics that can guarantee long lifetimes. The upcoming wide-bandgap semiconductor devices show great promise in providing the f...
This review analyzes the transition from silicon to wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductor materials for power electronics, focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. Following a PRISMA-based syst...
We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/...
A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resi...
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-...
We examine the bias- and temperature-dependent direct current, radio frequency, and equivalent-circuit characteristics of a 150 nm AlGaN/GaN/SiC high-electron-mobility transistor (HEMT) for high-frequency applications. DC and S-parameter measurements...
Dislocation reduction in gallium nitride (GaN) epitaxial layers remains a critical challenge for high-performance GaN-based electronic devices. In this study, GaN epitaxial growth on newly-developed 4H-Silicon Carbide (SiC) meta-substrates was system...
This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combinin...
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, hi...
The exponential growth of artificial intelligence (AI), electrified transport, and renewable generation is accelerating a structural shift in how societies produce, deliver, and consume electricity. We argue that the next frontier is not incremental...
Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical...
The purpose of the study is to present a proper approach that ensures the energy conservation principle during electrothermal simulations of bipolar devices. The simulations are done using Sentaurus TCAD software from Synopsys. We focus on the drift-...
This paper presents a Ka-band three-stage power amplifier for 5G communications, which has been implemented in a 150 nm GaN-on-SiC technology and adopts a Doherty architecture. The amplifier is made up of a 50 Ω input buffer, which drives a pow...
In this article, the practical comparison of the operational performance of the modular (or multiport) and non-modular bidirectional buck/boost (bi-BB) DC/DC converter is realized. The main contribution of the work is the evaluation of both concepts...
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in vario...
A modular multilevel converter (MMC) is an advanced voltage source converter applicable to a wide range of medium and high-voltage applications. It has competitive advantages such as quality output performance, high modularity, simple scalability, an...
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidat...
Many applications (electric vehicles, renewable energies, low-voltage DC grids) require simple, high-power density and low-current ripple-boost converters. Traditional step-up converters are limited when large transformation ratios are involved. In t...
The aim of this work is to investigate the influence of circuit elements on the properties of the selected power factor correction (PFC) topology. Active or passive PFC serves to increase the power factor (PF) and reduce the total harmonic distortion...
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