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Micromachines
Volume 11
Issue 12
10.3390/mi11121131
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Article

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

by
Justinas Jorudas
1,*,
Artūr Šimukovič
1,
Maksym Dub
2,3,
Maciej Sakowicz
2,3,
Paweł Prystawko
2,
Simonas Indrišiūnas
1,
Vitalij Kovalevskij
1,
Sergey Rumyantsev
2,3,
Wojciech Knap
2,3 and
Irmantas Kašalynas
1,*
1
Center for Physical Sciences and Technology (FTMC), Saulėtekio 3, 10257 Vilnius, Lithuania
2
Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland
3
CENTERA Laboratories, Institute of High Pressure Physics PAS, ul. Sokołowska 29/37, 01-142 Warsaw, Poland
*
Authors to whom correspondence should be addressed.
Micromachines 2020, 11(12), 1131; https://doi.org/10.3390/mi11121131
Received: 29 November 2020 / Revised: 15 December 2020 / Accepted: 16 December 2020 / Published: 20 December 2020
(This article belongs to the Special Issue Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II)
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Abstract

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications. View Full-Text
Keywords: AlGaN/GaN; SiC; high electron mobility transistor; Schottky barrier diode; breakdown field; noise; charge traps; radio frequency AlGaN/GaN; SiC; high electron mobility transistor; Schottky barrier diode; breakdown field; noise; charge traps; radio frequency
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Jorudas, J.; Šimukovič, A.; Dub, M.; Sakowicz, M.; Prystawko, P.; Indrišiūnas, S.; Kovalevskij, V.; Rumyantsev, S.; Knap, W.; Kašalynas, I. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines 2020, 11, 1131. https://doi.org/10.3390/mi11121131

AMA Style

Jorudas J, Šimukovič A, Dub M, Sakowicz M, Prystawko P, Indrišiūnas S, Kovalevskij V, Rumyantsev S, Knap W, Kašalynas I. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines. 2020; 11(12):1131. https://doi.org/10.3390/mi11121131

Chicago/Turabian Style

Jorudas, Justinas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, and Irmantas Kašalynas. 2020. "AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics" Micromachines 11, no. 12: 1131. https://doi.org/10.3390/mi11121131

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