AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
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Jorudas, J.; Šimukovič, A.; Dub, M.; Sakowicz, M.; Prystawko, P.; Indrišiūnas, S.; Kovalevskij, V.; Rumyantsev, S.; Knap, W.; Kašalynas, I. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines 2020, 11, 1131. https://doi.org/10.3390/mi11121131
Jorudas J, Šimukovič A, Dub M, Sakowicz M, Prystawko P, Indrišiūnas S, Kovalevskij V, Rumyantsev S, Knap W, Kašalynas I. AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics. Micromachines. 2020; 11(12):1131. https://doi.org/10.3390/mi11121131
Chicago/Turabian StyleJorudas, Justinas; Šimukovič, Artūr; Dub, Maksym; Sakowicz, Maciej; Prystawko, Paweł; Indrišiūnas, Simonas; Kovalevskij, Vitalij; Rumyantsev, Sergey; Knap, Wojciech; Kašalynas, Irmantas. 2020. "AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics" Micromachines 11, no. 12: 1131. https://doi.org/10.3390/mi11121131