A new silicon carbide (SiC) planar-gate insulated-gate bipolar transistor (IGBT) is proposed and comprehensively investigated in this paper. Compared to the traditional SiC planar-gate IGBT, the new IGBT boasts a much stronger injection enhancement e...
A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge...
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa...
The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET...
In this paper, a novel 1200 V SiC trench MOSFET with a laterally widened P-shield region (LW-MOSFET) is presented by using the two-dimensional numerical simulation. Compared with the conventional trench MOSFET (CT-MOSFET), the LW-MOSFET demonstrates...
The vertical heterojunction Ga2O3 MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the p-type oxide as the current-blocking layer (CBL) is investigated for the first time using SILVACO simulation software. The results show that the thr...
To address trench-bottom electric-field concentration and the limited BV–Ron,sp trade-off of the conventional shielded-gate trench MOSFET (Conventional SGT), a floating-P-island-assisted silicon SGT MOSFET is proposed. Sentaurus TCAD is used to...
In this study, n-channel 4H-SiC MOSFETs with a high-k/SiO2 stacked gate dielectric and a p+-polysilicon gate are proposed and investigated via numerical simulations. The high-k dielectric increases the gate capacitance, thereby reducing the specific...
Silicon german ium (SiGe) has attracted significant attention for applications in the source/drain (S/D) regions of p-type metal-oxide-semiconductor field-effect transistors (p-MOSFETs). However, in SiGe, as the Ge concentration increases, high-densi...
We present an analytic compact model for p-type cylindrical gate-all-around (GAA) MOSFETs in the quasi-ballistic/ballistic regime, incorporating drain-induced barrier lowering (DIBL). To describe the potential profile, an undetermined parameter is us...
A silicon carbide (SiC) SGT MOSFET featuring a “一”-shaped P+ shielding region (PSR), named SPDT-MOS, is proposed in this article. The improved PSR is introduced as a replacement for the source trench to enhance the forward performa...
This paper presents an analytical compact DC current model and a numerical gate capacitance model for p-type cylindrical gate-all-around (GAA) nanowire metal–oxide–semiconductor field-effect transistors (MOSFETs). The models are formulate...
This paper presents a reliability study of a conventional 650 V SiC planar MOSFET subjected to pulsed HTRB (High-Temperature Reverse Bias) stress and negative HTGB (High-Temperature Gate Bias) stress defined by a TCAD static simulation showing the el...
The application of conventional power metal-oxide-semiconductor field-effect transistor (MOSFET) is limited by the famous one-dimensional “silicon limit” (1D-limit) in the trade-off relationship between specific on-resistance (RSP) and br...
The body diode degradation in SiC power MOSFETs has been demonstrated to be caused by basal plane dislocation (BPD)-induced stacking faults (SFs) in the drift region. To enhance the reliability of the body diode, many process and structural improveme...
650 V SiC planar MOSFETs with various JFET widths, JFET doping concentrations, and gate oxide thicknesses were fabricated by a commercial SiC foundry on two six-inch SiC epitaxial wafers. An orthogonal
This paper proposes proportional-integral/proportional gain controller parameter tuning in a two-degrees-of-freedom (2DOF) control system using the fictitious reference iterative tuning (FRIT) method for permanent magnet synchronous motor (PMSM) spee...
A novel nc-Si/c-Si heterojunction MOSFETs pressure sensor is proposed in this paper, with four p-MOSFETs with nc-Si/c-Si heterojunction as source and drain. The four p-MOSFETs are designed and fabricated on a square silicon membrane by CMOS process a...
We propose a novel silicon carbide (SiC) self-aligned N-type ion implanted trench MOSFET (NITMOS) device. The maximum electric field in the gate oxide could be effectively reduced to below 3 MV/cm with the introduction of the P-epi layer below the tr...
A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehens...
A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (TMOS) with depletion-mode pMOS (D-pMOS) is proposed and investigated via TCAD simulation. It has an auxiliary gate electrode that controls the electrical connections of P-shield...
We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation...
A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping conc...
Emerging materials in the field of implantable sensors should meet the needs for biocompatibility; transparency; flexibility and integrability. In this work; we present an integrated approach for implementing flexible bio-sensors based on thin Paryle...
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of ele...
The coupling effect of negative bias temperature instability (NBTI) and total ionizing dose (TID) was investigated by simulation based on the fully depleted silicon on insulator (FDSOI) PMOS. After simulating the situation of irradiation after NBT st...
In this work we report on the improvement in cold temperature characteristics of PMOSFETs and inverter circuits by removing the plasma-damaged layer of the source/drain contacts. We removed the plasma-induced damage on the Si using a simple in situ S...
In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further induc...
Diamond has emerged as a promising ultrawide-bandgap semiconductor material for next-generation electronics because of its unique combination of a wide bandgap, high critical electric field, superior carrier transport properties, exceptionally high t...
Plasma doping (PLAD) technology is widely used in the semiconductor industry. One of the problems associated with PLAD is precise dosage control and monitoring during the doping process. Excessive boron doping into the n-type poly gate will affect th...
The effect of the work-function variation (WFV) of metal-oxide-semiconductor field-effect transistor (MOSFET) gates on a monolithic 3D inverter (M3DINV) structure is investigated in the current paper. The M3DINV has a structure in which MOSFETs are s...
This study designed a radiation-hardened (RH) complementary metal oxide semiconductor (CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to the total ionizing dose (TID) effect and evaluated its tolerance to radiat...
A novel Silicon-Carbide heterojunction U-MOSFET embedded a P-type pillar buried in the drift layer (BP-TMOS) is proposed and simulated in this study. When functioning in the on state, the merged heterojunction structure will control the parasitic bod...
In this paper, we propose a logic-in-memory (LIM) inverter comprising a silicon nanowire (SiNW) n-channel feedback field-effect transistor (n-FBFET) and a SiNW p-channel metal oxide semiconductor field-effect transistor (p-MOSFET). The hybrid logic a...
Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square...
Electronic equipment in nuclear power plants and nuclear warfare is damaged by transient effects that cause high-energy pulsed radiation. There is a concern that this type of damage can even cause enormous economic losses and human casualties by para...
The paper investigates and addresses the “dead time” of a synchronous step-down converter implemented with P-channel and N-channel transistors. The transistors are controlled by a single driver, and “dead time” is implemented...
This work presents the design of a
Measuring urine pH and metabolite concentrations is crucial for detecting potential health issues like urinary tract infection, kidney failure, and metabolic disorders. To address this issue, we are working on the development of a Bio-FET system, a b...
Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). Although the literature shows that commercial off-the-shelf components are widely used...
Oral cancer represents a significant global public health challenge, contributing substantially to the incidence and mortality of cancer. Despite established risk factors such as tobacco use and alcohol consumption, early detection remains crucial fo...
Split Gate SiC MOSFETs (SG-MOSFETs) have been demonstrated to exhibit excellent power dissipation at high operating frequencies due to their low specific reverse transfer capacitance (Crss,sp); however, there are several reliability issues of SG-MOSF...
Built-in freewheeling diode metal–oxide–semiconductor field-effect transistors (MOSFETs) that ensure high performance and reliability at high voltages are crucial for chip integration. In this study, a 4H–SiC built-in MOS-channel di...
This research proposes a novel 4H-SiC power device structure—different concentration floating superjunction MOSFET (DC-FSJ MOSFET). Through simulation via Synopsys Technology Computer Aided Design (TCAD) software, compared with the structural and sta...
In this paper, we compare the static and switching characteristics of the 4H-SiC conventional UMOSFET (C-UMOSFET), double trench MOSFET (DT-MOSFET) and source trench MOSFET (ST-MOSFET) through TCAD simulation. In particular, the effect of the trenche...
Nanoporous gold (NPG) has excellent catalytic activity and has been used in the recent literature on this issue as a sensor in various electrochemical and bioelectrochemical reactions. This paper reports on a new type of metal–oxide–semic...
Based on the minimum conduction band edge caused by the minimum channel potential resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied by the Fermi–Dirac distribution function on the source and drain sides, a...
In this study, a novel MOS-channel diode embedded in a SiC superjunction MOSFET (MCD SJ-MOSFET) is proposed and analyzed by means of numerical TCAD simulations. Owing to the electric field shielding effect of the P+ body and the P-pillar, the channel...
This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprise...
A biocompatible and functional interface can improve the sensitivity of bioelectronics. Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the sur...
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