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Electronics
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Wide-Bandgap Device Application: Devices, Circuits, and Drivers
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Wide-Bandgap Device Application: Devices, Circuits, and Drivers

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 October 2024 | Viewed by 6981

Special Issue Editors

Prof. Dr. Yimeng Zhang

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: gate driver design for SiC MOSFET; high temperature integrated circuits based on SiC
Dr. Lejia Sun

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: power integrated circuit; wide bandgap power semiconductor devices and integration; power electronics
Prof. Dr. Yuming Zhang

E-Mail Website
Guest Editor
School of Microelectronics, Xidian University, Xi’an 710071, China
Interests: SiC material-related devices and circuits

Special Issue Information

Dear Colleagues,

(1) As SiC and GaN devices are increasingly being applied in power electronics, the excellent performance of these devices is required. Therefore, how to design the devices, how to drive them, and what other fields these devices can be applied in are attractive research issues.

(2) This Special Issue aims to exhibit the research progress of the application of wide-bandgap semiconductor devices, including the novel structures of devices, new topology of circuits for the high performance of wide-bandgap devices, and integrated circuit application of wide-bandgap semiconductors.

(3) In this Special Issue, original research articles and reviews are welcome. Research areas may include (but not limited to) the following: high-efficiency SiC MOSFET-based DC/DC converters for EV application, high-voltage SiC-based DC/DC converters for HVDC application, SiC-based AC/DC for EV charging station application, high-power density power converters based on GaN devices, integrated circuits based on SiC material for harsh environment application, and integrated circuits based on GaN material for high-frequency application.

Prof. Dr. Yimeng Zhang
Dr. Lejia Sun
Prof. Dr. Yuming Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductor devices
  • SiC
  • GaN
  • power converters
  • wide-bandgap semiconductor integrated circuits

Published Papers (10 papers)

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Research

16 pages, 11276 KiB  
Article
A Multiscale Simulation on Aluminum Ion Implantation-Induced Defects in 4H-SiC MOSFETs
by Yawen Wang, Haipeng Lan, Qiwei Shangguan, Yawei Lv and Changzhong Jiang
Electronics 2024, 13(14), 2758; https://doi.org/10.3390/electronics13142758 - 13 Jul 2024
Viewed by 411
Abstract
Aluminum (Al) ion implantation is one of the most important technologies in SiC device manufacturing processes due to its ability to produce the p-type doping effect, which is essential to building p–n junctions and blocking high voltages. However, besides the doping effect, defects [...] Read more.
Aluminum (Al) ion implantation is one of the most important technologies in SiC device manufacturing processes due to its ability to produce the p-type doping effect, which is essential to building p–n junctions and blocking high voltages. However, besides the doping effect, defects are also probably induced by the implantation. Here, the impacts of Al ion implantation-induced defects on 4H-SiC MOSFET channel transport behaviors are studied using a multiscale simulation flow, including the molecular dynamics (MD) simulation, density functional theory (DFT) calculation, and tight-binding (TB) model-based quantum transport simulation. The simulation results show that an Al ion can not only replace a Si lattice site to realize the p-doping effect, but it can also replace the C lattice site to induce mid-gap trap levels or become an interstitial to induce the n-doping effect. Moreover, the implantation tends to bring additional point defects to the 4H-SiC body region near the Al ions, which will lead to more complicated coupling effects between them, such as degrading the p-type doping effect by trapping free hole carriers and inducing new trap states at the 4H-SiC bandgap. The quantum transport simulations indicate that these coupling effects will impede local electron transports, compensating for the doping effect and increasing the leakage current of the 4H-SiC MOSFET. In this study, the complicated coupling effects between the implanted Al ions and the implantation-induced point defects are revealed, which provides new references for experiments to increase the accepter activation rate and restrain the defect effect in SiC devices. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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12 pages, 4096 KiB  
Article
A Geometrically Scalable Lumped Model for Spiral Inductors in Radio Frequency GaN Technology on Silicon
by Simone Spataro, Giuseppina Sapone, Marcello Giuffrida and Egidio Ragonese
Electronics 2024, 13(13), 2665; https://doi.org/10.3390/electronics13132665 - 7 Jul 2024
Viewed by 377
Abstract
This paper presents a lumped scalable model for spiral inductors in a radio frequency (RF) gallium nitride (GaN) technology on silicon substrate. The model has been developed by exploiting electromagnetic (EM) simulations of geometrically scaled spiral inductors. To this aim, the technology substrate, [...] Read more.
This paper presents a lumped scalable model for spiral inductors in a radio frequency (RF) gallium nitride (GaN) technology on silicon substrate. The model has been developed by exploiting electromagnetic (EM) simulations of geometrically scaled spiral inductors. To this aim, the technology substrate, i.e., the metal back-end-of-line along with dielectric and semiconductor layers of the adopted GaN process, has been validated by means of experimental data and then used to define the EM simulator set-up for the spiral inductors. The proposed model adopts a simple π-topology with only seven lumped components and predicts inductor performance in terms of inductance, quality factor (Q-factor) and self-resonance frequency (SRF) for a large range of geometrical parameters of the spiral (i.e., number of turns, metal width, inner diameter). Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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9 pages, 3241 KiB  
Article
Mobility Extraction Using Improved Resistance Partitioning Methodology for Normally-OFF Fully Vertical GaN Trench MOSFETs
by Valentin Ackermann, Blend Mohamad, Hala El Rammouz, Vishwajeet Maurya, Eric Frayssinet, Yvon Cordier, Matthew Charles, Gauthier Lefevre, Julien Buckley and Bassem Salem
Electronics 2024, 13(12), 2350; https://doi.org/10.3390/electronics13122350 - 15 Jun 2024
Viewed by 494
Abstract
In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high ION/IOFF (~109) ratio and a significantly small gate leakage current (10−11 A/mm). [...] Read more.
In this work, fully vertical GaN trench MOSFETs were fabricated and characterized to evaluate their electrical performances. Transistors show a normally-OFF behavior with a high ION/IOFF (~109) ratio and a significantly small gate leakage current (10−11 A/mm). Thanks to an improved resistance partitioning method, the resistances of the trench bottom and trench channel were extracted accurately by taking into account different charging conditions. This methodology enabled an estimation of the effective channel and bottom mobility of 11.1 cm2/V·s and 15.1 cm2/V·s, respectively. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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11 pages, 3893 KiB  
Article
Collaborative Design of Pulsed-Power Generator Based on SiC Drift Step Recovery Diode
by Jingkai Guo, Yahui Chen, Yu Zhang, Lejia Sun, Yu Zhou, Qingwen Song, Xiaoyan Tang and Yuming Zhang
Electronics 2024, 13(11), 2152; https://doi.org/10.3390/electronics13112152 - 31 May 2024
Viewed by 387
Abstract
Despite the extensively researched physical principles, numerous published simulations on SiC drift step recovery diodes (SiC DSRD) and the practical implementation of SiC DSRD-based pulses, there are few kinds of research focusing on collaborative design between a SiC DSRD and its driving circuit. [...] Read more.
Despite the extensively researched physical principles, numerous published simulations on SiC drift step recovery diodes (SiC DSRD) and the practical implementation of SiC DSRD-based pulses, there are few kinds of research focusing on collaborative design between a SiC DSRD and its driving circuit. In this paper, a collaborative design method of a SiC DSRD and its driving circuit are presented. In addition, a detailed simulation is conducted to verify design considerations and to analyze the impact of driving parameter changes on the output pulse waveform. A pulse generator prototype with a self-developed SiC DSRD is implemented. The experimental results show that the circuit can output a peak voltage of 790 V on a matching load of 50 Ω, with a rise time of 520 ps (20%~80%), and can work at a 1 MHz repetition frequency rate with good stability. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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10 pages, 3060 KiB  
Article
Study of 1500 V AlGaN/GaN High-Electron-Mobility Transistors Grown on Engineered Substrates
by An-Chen Liu, Pei-Tien Chen, Chia-Hao Chuang, Yan-Chieh Chen, Yan-Lin Chen, Hsin-Chu Chen, Shu-Tong Chang, I-Yu Huang and Hao-Chung Kuo
Electronics 2024, 13(11), 2143; https://doi.org/10.3390/electronics13112143 - 30 May 2024
Viewed by 501
Abstract
In this study, we demonstrate breakdown voltage at 1500 V of GaN on a QST power device. The high breakdown voltage and low current collapse performance can be attributed to the higher quality of GaN buffer layers grown on QST substrates. This is [...] Read more.
In this study, we demonstrate breakdown voltage at 1500 V of GaN on a QST power device. The high breakdown voltage and low current collapse performance can be attributed to the higher quality of GaN buffer layers grown on QST substrates. This is primarily due to the matched coefficient of thermal expansion (CTE) with GaN and the enhanced mechanical strength. Based on computer-aided design (TCAD) simulations, the strong electric-field-induced trap-assisted thermionic field emissions (TA-TFEs) in the GaN on QST could be eliminated in the GaN buffer. This demonstration showed the potential of GaN on QST, and promises well-controlled performance and reliability under high-power operation conditions. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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16 pages, 7222 KiB  
Article
Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors
by Chul-Min Kim, Hyun-Soo Yoon, Jong-Soo Kim and Nam-Joon Kim
Electronics 2024, 13(7), 1203; https://doi.org/10.3390/electronics13071203 - 25 Mar 2024
Viewed by 731
Abstract
This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power density in power [...] Read more.
This paper presents a circuit for detecting and protecting against short circuits in E-mode gallium nitride high-electron-mobility transistors (GaN HEMTs) and analyzes the protection performance of the circuit. GaN HEMTs possess fast switching characteristics that enable high efficiency and power density in power conversion devices. However, these characteristics also pose challenges in protecting against short circuits and overcurrent situations. The proposed method detects short-circuit events by monitoring an instantaneous drop in the DC bus voltage of a circuit with GaN HEMTs applied and uses a bandpass filter to prevent the malfunction of the short-circuit protection circuit during normal switching and ensure highly reliable operation. Using this method, the short-circuit detection time of E-mode GaN HEMTs can be reduced to 257 ns, successfully protecting the device without malfunctions even in severe short-circuit situations occurring at high DC link voltages. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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9 pages, 4419 KiB  
Communication
Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics
by Hyowon Yoon and Ogyun Seok
Electronics 2024, 13(5), 962; https://doi.org/10.3390/electronics13050962 - 1 Mar 2024
Cited by 1 | Viewed by 872
Abstract
The 1.2 kV SiC MOSFET with a buried oxide was verified to be effective in improving switching characteristics. It is crucial to reduce the gate–drain charge (QGD) of devices to minimize switching loss (Etotal). The SiC MOSFET with a [...] Read more.
The 1.2 kV SiC MOSFET with a buried oxide was verified to be effective in improving switching characteristics. It is crucial to reduce the gate–drain charge (QGD) of devices to minimize switching loss (Etotal). The SiC MOSFET with a split gate and device with a buffered oxide have been proposed by previous studies to reduce the QGD of the devices. However, both devices have a common issue of the concentration of the electric field at the gate oxide. In this paper, we propose the 1.2 kV SiC MOSFET with a buried oxide to reduce the QGD and suppress the electric field crowding effect at the gate oxide. We analyzed the specific on-resistance (Ron,sp), QGD and the maximum electric field at the gate oxide in the off state (Eox,max) according to the width (WBO) and thickness of the buried oxides (TBO). The device with the buried oxide, under optimal conditions, showed lower Eox,max and Etotal without significant increase in Ron,sp in comparison to the device with a conventional structure. These results indicate that the buried oxide can improve the switching characteristics of 1.2 kV SiC MOSFETs. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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20 pages, 1406 KiB  
Article
A Magnetic Integration Mismatch Suppression Strategy for Parallel SiC Power Devices Applications
by Shikai Sun, Jialin Liu, Lei Chen, Zhenlin Lu, Yuan Wang, Wenhao Yang, Yuyin Sun and Hui Guo
Electronics 2024, 13(5), 954; https://doi.org/10.3390/electronics13050954 - 1 Mar 2024
Viewed by 883
Abstract
A new magnetic integrated parallel current sharing control method for parallel silicon carbide (SiC) power devices is presented in this article. The problem of the application of parallel connected SiC power devices is analyzed. The coupled inductance method is adopted to solve the [...] Read more.
A new magnetic integrated parallel current sharing control method for parallel silicon carbide (SiC) power devices is presented in this article. The problem of the application of parallel connected SiC power devices is analyzed. The coupled inductance method is adopted to solve the problem. Based on the active-back converter, we establish the theoretical model of the coupled inductance, and figure out its working mechanism. The integrated magnetic device is designed based on the working mechanism, and the effectiveness is determined through simulation. A 12 V/10 A output magnetic integrated active-flyback converter prototype is fabricated and tested to verify the strategy. Measurement results show that, with the proposed magnetic integrated method, the mismatch voltage is suppressed to 0.1 V under all load conditions, and the efficiency increases by at most 6.52% under full load conditions. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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14 pages, 2827 KiB  
Article
A Hierarchical Driving Control Strategy Applied to Parallel SiC MOSFETs
by Yin Luo, Xiaoyan Tang, Shikai Sun, Jialin Liu, Wenhao Yang and Yuyin Sun
Electronics 2024, 13(1), 70; https://doi.org/10.3390/electronics13010070 - 22 Dec 2023
Cited by 2 | Viewed by 678
Abstract
SiC (silicon carbide) MOSFETs have been extensively used in the power electronics industry due to their exceptional characteristics. First, it was found in this study that their driving loss is larger than their conduction loss in high-frequency applications. Based on this finding, this [...] Read more.
SiC (silicon carbide) MOSFETs have been extensively used in the power electronics industry due to their exceptional characteristics. First, it was found in this study that their driving loss is larger than their conduction loss in high-frequency applications. Based on this finding, this study proposes a hierarchical driving control strategy for improving the parallel-converter efficiency of SiC MOSFETs under light loads. Efficiency under light loads is of great importance for battery-based energy storage systems. To minimize the sum of the conduction loss and driving loss in parallel devices, this study proposes a current-monitoring hierarchical driving strategy based on an active-clamped flyback converter. By monitoring the output current of the converter, the strategy minimizes the sum of the driving and conduction losses by switching the driving state under different loads. The results of simulations indicate the effectiveness of the load-current-monitoring strategy. To verify the effectiveness of this method, a principle prototype of two SiC MOSFETs connected in parallel at 12 V/5 A was fabricated and tested, and the test results showed that there was a maximum improvement of 1.4% in the converter’s efficiency when the load current was in the range of 0.5–1.5 A. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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14 pages, 4538 KiB  
Article
Design of High-Performance Driving Power Supply for Semiconductor Laser
by Bin Feng, Junfeng Zhao, Haofei Zhang, Tao Li and Jianjun Mi
Electronics 2023, 12(23), 4758; https://doi.org/10.3390/electronics12234758 - 23 Nov 2023
Viewed by 1083
Abstract
High power semiconductor laser is a kind of photoelectric device with high efficiency and high stability, the performance of its drive system directly affects its output characteristics and service life. In order to solve the problems of stability and robustness of the output [...] Read more.
High power semiconductor laser is a kind of photoelectric device with high efficiency and high stability, the performance of its drive system directly affects its output characteristics and service life. In order to solve the problems of stability and robustness of the output power of the semiconductor laser, a semiconductor laser driving power supply with high efficiency, low ripple and strong anti-interference ability was developed. In this paper, the topology of the LCC resonant converter is adopted (LCC refers to the type of resonant converter, because its resonator is composed of an inductor L and two capacitors C, it is called LCC resonant converter). The power supply adopts full-bridge LCC resonant power topology. Firstly, a mathematical model is established to analyze the relationship between LCC resonator parameters and output current gain. Secondly, an LCC resonator parameter design method is proposed to reduce the current stress of components, and the variable frequency phase shift (PFM-PWM) composite control strategy and linear active disturbance rejection control (LADRC) algorithm are proposed, which not only ensures the zero voltage (ZVS) conduction of MOS (Metal-Oxide-Semiconductor) tube, but also reduces the on-off loss of MOS tube. The PFM-PWM composite control strategy and LADRC algorithm not only improve the power efficiency of the drive power supply, suppress the output current ripple, but also ensure that the output current of the drive power supply is stable when the input voltage, load and parasitic parameters of the circuit change. Finally, the simulation and experimental results show that the power supply can be continuously adjustable in the output current range of 0–40 A, the current ripple is less than 0.8%, and the working efficiency is up to 92%. It has the characteristics of high stability, small ripple, high efficiency, low cost and good robustness. Full article
(This article belongs to the Special Issue Wide-Bandgap Device Application: Devices, Circuits, and Drivers)
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