Special Issue "Electronic Materials and Devices"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 30 June 2020.

Special Issue Editor

Prof. Dr. Oleg A. Ageev
Website
Guest Editor
Scientific and Educational Center "Nanotechnologies", Southern Federal University, Taganrog, Russia
Interests: nanotechnology, nanoelectronics, microsystems technology, nanosystems technology, atomic force microscopy, scanning tunneling microscopy, molecular beam epitaxy, focused ion beams, laser ablation

Special Issue Information

Dear Colleagues,

Modern semiconductor technology is inexorably approaching the threshold of miniaturization and, as a result, its efficiency against the background of rapidly growing needs for high-performance processing systems, and the storage and safe transfer of large amounts of data. This necessitates the transition to fundamentally new architectures of computing and telecommunication platforms, primarily hybrid, based on the integration of further options for the development of a traditional and promising electronic component base with the principles of quantum electronics and photonics. Of particular note is the relevance of the creation of solid-state schemes for the implementation of such platforms, coupled with the current and/or predictable capabilities of production processes and research tools in the framework of conditionally planar technology.

Building such platforms is possible on the basis of such promising functional elements as highly efficient sources of single and entangled photons (quantum communication and cryptography), quantum registers (quantum computing and memory/quantum computing), structural units (blocks) of cellular automata, functional and structural blocks of hybrid integral schemes (for example, microdisk lasers on whispering gallery mods), etc. This, in turn, requires the development of new methods and approaches in the field of designing functional elements of nano- and optoelectronics, conducting research in the field of creating new functional materials based on various types of nanostructures, etc.

This Special Issue, “Electronic Materials and Devices”, will be a collection of full papers, short communications and review papers focusing on recent progress in the field of semiconductor nanostructures, the technology of their production and promising nano- and optoelecronic elements and devices based on them.

Prof. Dr. Oleg A. Ageev
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • functional materials
  • semiconductor nanostructures
  • optoelecronic elements and devices
  • nanoelectronic devices
  • device modeling and numerical simulation
  • modeling methodology and approaches

Published Papers (2 papers)

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Research

Open AccessArticle
On-Chip Miniaturized Bandpass Filter Using GaAs-Based Integrated Passive Device Technology For L-Band Application
Materials 2019, 12(18), 3045; https://doi.org/10.3390/ma12183045 - 19 Sep 2019
Cited by 1
Abstract
In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance [...] Read more.
In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance the mutual inductive effect and form the differential geometry of the outer inductors. In addition, the design of the differential inductor combined with the centrally embedded capacitor results in a compact construction with the overall size of 0.037λ0 × 0.019λ0 (1537.7 × 800 μm2) where λ0 is the wavelength of the central frequency. For the accuracy evolution of the equivalent circuit, the frequency-dependent lumped elements of the proposed BPF was analyzed and modeled through the segment method, mutual inductance approach, and simulated scattering parameters (S-parameters). Afterward, the BPF was fabricated using GaAs-based IPD technology and a 16-step manufacture flow was accounted for in detail. Finally, the fabricated BPF was wire-bonded with Au wires and packaged onto a printed circuit board for radio-frequency performance measurements. The measured results indicate that the implemented BPF possesses a center frequency operating at 2 GHz with the insertion losses of 0.38 dB and the return losses of 40 dB, respectively, and an ultrawide passband was achieved with a 3-dB fraction bandwidth of 72.53%, as well. In addition, a transmission zero is located at 5.32 GHz. Moreover, the variation of the resonant frequency with different inductor turns and metal thicknesses was analyzed through the simulation results, demonstrating good controllability of the proposed BPF. Full article
(This article belongs to the Special Issue Electronic Materials and Devices)
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Open AccessArticle
Printable Stretchable Silver Ink and Application to Printed RFID Tags for Wearable Electronics
Materials 2019, 12(18), 3036; https://doi.org/10.3390/ma12183036 - 19 Sep 2019
Cited by 1
Abstract
A printable elastic silver ink has been developed, which was made of silver flakes, dispersant, and a fluorine rubber and could be sintered at a low temperature. The printed elastic conductors showed low resistivity at 21 μΩ·cm, which is about 13.2 times of [...] Read more.
A printable elastic silver ink has been developed, which was made of silver flakes, dispersant, and a fluorine rubber and could be sintered at a low temperature. The printed elastic conductors showed low resistivity at 21 μΩ·cm, which is about 13.2 times of bulk silver (1.59 μΩ·cm). Their mechanical properties were investigated by bending, stretching, and cyclic endurance tests. It was found that upon stretching the resistance of printed conductors increased due to deformation and small cracks appeared in the conductor, but was almost reversible when the strain was removed, and the recovery of conductivity was found to be time dependent. Radio-frequency identification (RFID) tags were fabricated by screen printing the stretchable silver ink on a stretchable fabric (lycra). High performance of tag was maintained even with 1000 cycles of stretching. As a practical example of wearable electronics, an RFID tag was printed directly onto a T-shirt, which demonstrated its normal working order in a wearing state. Full article
(This article belongs to the Special Issue Electronic Materials and Devices)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Carrier dynamic investigations of AlGaInAs quantum well revealed by low temperature time-resolved photoluminescence.

Yue Song, Yongyi Chen*, Ligong Zhang*, Yugang Zeng*, Li Qin, Lei Liang, Yongqiang Ning, Lijun Wang, Yongshi Luo, Haifeng Zhao

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

1.5 μm AlGaInAs quantum well (QW) lasers have great potential in the application fields of optical communications, eye-safity lidars and three-dimensional imaging, owing to the advantages of low temperature sensitivity of threshold current and good gain performance. Numerous experimental evidence indicated that carriers capture-escape processes affect the resonant frequency and modulation response performance of QW lasers. However, the mechanism of carrier dynamic in AlGaInAs QW structure is still ambigous for complicated artificial multilayer. In this paper, the carrier dynamics of AlGaInAs QW were investigated by temperature-dependent time-resolved photoluminescence (TRPL) in the temperature range of 14-300 K. A non-monotone evolution in carrier escape process was observed at low temperature. The escape rate of carriers in AlGaInAs QW increase with the decrease of temperature, and it's quite different from that in bulk semiconductor. Two optical transitions were demonstrated to have major impact on the PL emission of AlGaInAs QW in the low-temperature range. The phenomena above were associated with the lattice strain fluctuation between adjacent layers. The study of carrier dynamic process has a significant influence on the optical properties and localization of carriers in the AlGaInAs QWs.

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