Advanced Nano-Semiconductor Devices: Design, Modeling and Next-Generation AI Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 20 December 2025 | Viewed by 14
Special Issue Editor
Interests: nano-MOSFET; tunnel field effect transistors; junctionless field effect transistors; CIS pixels; ROIC for sensors; PLL/ADC
Special Issue Information
Dear Colleagues,
Advanced nano-semiconductor devices play a crucial role in cutting-edge fields such as quantum computing, the Internet of Things, and next-generation artificial intelligence (AI). As the size of features on chips approaches 5 nanometers and smaller, traditional silicon-based devices are gradually reaching the ceiling of their physical performance. This predicament, instead, has become a catalyst for technological innovation, spurring the explosive development of novel device architectures and technologies for regulating quantum effects.
This Special Issue is open to scientific researchers around the world. We invite you to share the latest achievements in the areas of the design, modeling, and application of advanced nano-semiconductor devices. We look forward to presenting the wisdom of the academic community and jointly exploring the technological frontiers.
Dr. Bin Wang
Guest Editor
Manuscript Submission Information
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Keywords
- nano-semiconductor devices
- modeling and simulation
- reliability design
- novel concepts for device structure design
- quantum effects and quantum devices
- IoT and AI applications
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