A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region

: A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse recovery charge of the IHP-MOSFET decreased by 62.5% and 85.7%, respectively. In addition, a high breakdown voltage (BV) and low maximum oxide electric ﬁeld (E MOX ) could be achieved in the IHP-MOSFET by introducing a p-shield region (PSR) that effectively disperses the electric ﬁeld in the off-state. The proposed device also exhibited 3.9 times lower gate-to-drain capacitance (C GD ) than the C-MOSFET due to the split-gate structure and grounded PSR. As a result, the IHP-MOSFET had electrically excellent static and dynamic characteristics, and the Baliga’s ﬁgure of merit (BFOM) and high frequency ﬁgure of merit (HFFOM) were increased by 37.1% and 72.3%, respectively. Finally, the switching energy loss was decreased by 59.5% compared to the C-MOSFET.


Introduction
Silicon carbide (SiC) is a wide bandgap (WBG) material that can withstand a higher electric field and has good thermal conductivity compared to silicon (Si), so it is in the spotlight as a next-generation power MOSFET material [1][2][3][4]. GaN and diamond are also in the spotlight as wide bandgap materials, but SiC is more advantageous compared to both materials in terms of fabrication process because it can utilize the existing silicon process. SiC MOSFETs are being actively studied because of their superior switching characteristics compared to Si IGBTs [5,6]. To improve the switching characteristics of SiC MOSFETs, the gate-drain capacitance (C GD ) must be reduced because switching power loss occurs mainly during the charging and discharging of the C GD [7]. A well-known method to reduce the C GD is a split-gate MOSFET [8]. However, split-gate MOSFETs have critical problems in that the high electric field is concentrated on the split-gate oxide corner and there is a degradation of static characteristics such as on-resistance (R ON ) and breakdown voltage (BV). Therefore, several structures, including an accumulation-mode split-gate MOSFET and a split-gate MOSFET with floating P+ polysilicon, have been proposed to solve these problems [8,9].
Another way to improve the switching characteristics of 4H-SiC MOSFETs is to improve the reverse recovery characteristics of the body diodes. The SiC MOSFETs have a parasitic PiN body diode composed of a P-base region and an N-drift region, which features high turn-on voltage (V F ) because of the wide energy bandgap. Therefore, the body diode of a SiC MOSFET increases the peak current and reverse recovery charge during switching turn-on transients, which increases the reverse recovery power dissipation [10]. In order to improve the reverse recovery characteristics, several device structures in which the heterojunction diode-(composed of polysilicon and N-SiC) or Schottky barrier diode (SBD)-embedded SiC MOSFETs have been studied [11][12][13][14][15].
In this study, a novel 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and investigated through Sentaurus TCAD simulation. The P+ polysilicon was located at the mesa region of the IHP-MOSFET, and acted as a heterojunction diode (HJD). Due to the low turn-on voltage (V F ) of the HJD, the proposed device significantly reduced the reverse recovery charge (Q RR ) and reverse recovery time (t RR ) compared to the conventional SiC MOSFET (C-MOSFET). The p-shield region (PSR) under the P+ polysilicon effectively dissipated the electric field, resulting in high breakdown voltage (BV) and low maximum oxide electric field (E MOX ). Moreover, the gate-to-drain capacitance (C GD ) of the proposed device was decreased by a factor of 3.9 because of the split-gate structure and PSR. As a result, the IHP-MOSFET attained better switching performance in terms of the switching time and switching energy loss. In IHP-MOSFET, the integrated HJD shares source and drain electrodes with the parasitic body diode, so the HJD is connected to body diode in parallel as shown in Figure 1d. To achieve 1.2 kV BV class, the epi-layer thickness and N-drift doping concentration of the both devices were set to 10 µm and 8 × 10 15 cm −3 , respectively. The channel length and doping concentration were 0.5 µm and 2 × 10 17 cm −3 , respectively. The thickness of the gate oxide (t ox ) was set to 50 nm. To minimize the JFET resistance component, a current spreading layer (CSL) with a higher doping concentration (4 × 10 16 cm −3 ) was introduced to both devices [16,17]. In the case of the IHP-MOSFET, the CSL was placed above the PSR because the secondary epitaxy process was performed after forming the PSR through ion implantation. This wide CSL could help prevent serious degradation of R ON due to the depletion region caused by the PSR. Moreover, the proposed device adopted a split-gate structure in order to reduce the C GD . The PSR was placed under P+ polysilicon to protect the HJD and split-gate corner from a high electric field. As the floating p-shield region caused a dynamic degradation effect because of the stored negative charge in switching operations, the PSR must be grounded [18,19]. Therefore, the PSR was in contact with grounded P+ polysilicon to prevent dynamic degradation [20,21]. The detailed parameters for both devices are shown in Table 1.

Device Structures and Concept
To understand the operation of an HJD, Figure 1e shows the energy band diagram along line A-A in Figure 1b at thermal equilibrium. At a state of thermal equilibrium, the energy bands of P+ polysilicon and n-type 4H-SiC (CSL) differed as much as the built-in potential (e.g., electron barrier height Φ BN ). Moreover, due to the difference in energy bandgap between the two materials, a potential difference of 0.7 eV at the conduction band and 1.43 eV at the valence band occurred at the junction between the P+ polysilicon and CSL. When the forward bias was applied, the built-in potential began decreasing, and the conduction band of the CSL began rising. Therefore, this allowed the electrons in the CSL to easily migrate to the P+ polysilicon region. On the other hand, the valence band of the CSL also rose, but there was still a high energy barrier between the two materials, and the holes could not move from the P+ polysilicon to the CSL [22]. As a result, the HJD behaved as a unipolar device.

Proposed Fabrication Procedures
To demonstrate the feasibility of the IHP-MOSFET, the possible fabrication procedure was constructed, as shown in Figure 2. An N-drift is grown on an N+ substrate by an epitaxial growth and the PSR is formed by ion implantation (Figure 2a). After a second epitaxial process of the CSL, the N+ source, P+ base, and channel regions are formed by ion implantation as shown in Figure 2b. Then, the CSL is etched into the integrated HJD  Figure 2c) [23]. In this step, the CSL and a portion of the PSR are etched to make the PSR grounded (source contacted). Next, the P+ polysilicon is deposited in the trench region (Figure 2d), and thermal oxidation is performed to form the gate oxide layer (Figure 2e). In this step, a nitride mask can be used to prevent the oxidation of the P+ polysilicon region. Next, N+ polysilicon is deposited and patterned to form the split-gate (Figure 2f). Finally, an interlayer dielectric (ILD) oxide is deposited (Figure 2g) by LPCVD, and the metallization process proceeds to form the source and drain the ohmic contacts ( Figure 2h). both devices were set to 10 μm and 8 × 10 15 cm −3 , respectively. The channel length and doping concentration were 0.5 μm and 2 × 10 17 cm −3 , respectively. The thickness of the gate oxide (tox) was set to 50 nm. To minimize the JFET resistance component, a current spreading layer (CSL) with a higher doping concentration (4 × 10 16 cm −3 ) was introduced to both devices [16,17]. In the case of the IHP-MOSFET, the CSL was placed above the PSR because the secondary epitaxy process was performed after forming the PSR through ion implantation. This wide CSL could help prevent serious degradation of RON due to the depletion region caused by the PSR. Moreover, the proposed device adopted a split-gate structure in order to reduce the CGD. The PSR was placed under P+ polysilicon to protect the HJD and split-gate corner from a high electric field. As the floating p-shield region caused a dynamic degradation effect because of the stored negative charge in switching operations, the PSR must be grounded [18,19]. Therefore, the PSR was in contact with grounded P+ polysilicon to prevent dynamic degradation [20,21]. The detailed parameters for both devices are shown in Table 1.    bandgap between the two materials, a potential difference of 0.7 eV at the conduction band and 1.43 eV at the valence band occurred at the junction between the P+ polysilicon and CSL. When the forward bias was applied, the built-in potential began decreasing, and the conduction band of the CSL began rising. Therefore, this allowed the electrons in the CSL to easily migrate to the P+ polysilicon region. On the other hand, the valence band of the CSL also rose, but there was still a high energy barrier between the two materials, and the holes could not move from the P+ polysilicon to the CSL [22]. As a result, the HJD behaved as a unipolar device.

Proposed Fabrication Procedures
To demonstrate the feasibility of the IHP-MOSFET, the possible fabrication procedure was constructed, as shown in Figure 2. An N-drift is grown on an N+ substrate by an epitaxial growth and the PSR is formed by ion implantation (Figure 2a). After a second epitaxial process of the CSL, the N+ source, P+ base, and channel regions are formed by ion implantation as shown in Figure 2b. Then, the CSL is etched into the integrated HJD ( Figure 2c) [23]. In this step, the CSL and a portion of the PSR are etched to make the PSR grounded (source contacted). Next, the P+ polysilicon is deposited in the trench region (Figure 2d), and thermal oxidation is performed to form the gate oxide layer (Figure 2e). In this step, a nitride mask can be used to prevent the oxidation of the P+ polysilicon region. Next, N+ polysilicon is deposited and patterned to form the split-gate ( Figure 2f). Finally, an interlayer dielectric (ILD) oxide is deposited ( Figure 2g) by LPCVD, and the metallization process proceeds to form the source and drain the ohmic contacts ( Figure  2h).

Simulation Test Conditions
The two-dimensional (2D) SiC MOSFET devices were generated using the Synopsys Sentaurus Structure Editor tool (SDE) in which the doping profile, the dimension parameters, and the meshing of the device were set. The electrical characteristics of the device were simulated using Sentaurus Device (SDEVICE). The Poisson equation and the elec-

Simulation Test Conditions
The two-dimensional (2D) SiC MOSFET devices were generated using the Synopsys Sentaurus Structure Editor tool (SDE) in which the doping profile, the dimension parameters, and the meshing of the device were set. The electrical characteristics of the device were simulated using Sentaurus Device (SDEVICE). The Poisson equation and the electron/hole continuity equations were solved by either a transient solution or quasi-stationary solution. The mixed-mode simulation was carried out for the reverse recovery characteristics and switching characteristics, in which multiple active and passive devices were connected to construct the power circuit. The TCAD simulation models (physics) used in this study referred to our previous work [24]. The Auger, SRH, doping-dependent, and temperature-dependent recombination models were considered. In the case of the mobility model, the Arora, Lombardi, Enormal, and high field saturation models were considered [25]. Additionally, the bandgap narrowing and Fermi-Dirac statistics were considered. A fixed charge with a concentration of 1 × 10 12 cm −2 was incorporated into the SiC/SiO 2 interface for both devices, which corresponded to a channel mobility of about 50 cm 2 /V·s [26]. Finally, the interface trap charge with a concentration of 2 × 10 10 cm −2 was considered in the SiC/polysilicon interface [27].

Optimization of the IHP-MOSFET
In power MOSFETs, the R ON and BV are considered to be the most basic and important parameters. Figure 3 shows the influence of the width of the PSR (P W ) on R ON and BV characteristics in the IHP-MOSFET. As the P W increased, the current path decreased in the on-state but more of the electric field was dispersed by the PSR in the off-state. Therefore, an increase in P W caused an increase in R ON and BV, and it can be seen that there is a trade-off relationship. We chose the P W = 2 µm result, which achieved the highest Baliga's figure of merit (BFOM = BV 2 /R ON ). It is noteworthy that P W shows a similar BFOM of over 1150 MW/cm 2 in the range of 1.8 to 2.2 µm, indicating sufficient process tolerances.
tron/hole continuity equations were solved by either a transient solution or quasi-stationary solution. The mixed-mode simulation was carried out for the reverse recovery characteristics and switching characteristics, in which multiple active and passive devices were connected to construct the power circuit. The TCAD simulation models (physics) used in this study referred to our previous work [24]. The Auger, SRH, doping-dependent, and temperature-dependent recombination models were considered. In the case of the mobility model, the Arora, Lombardi, Enormal, and high field saturation models were considered [25]. Additionally, the bandgap narrowing and Fermi-Dirac statistics were considered. A fixed charge with a concentration of 1 × 10 12 cm −2 was incorporated into the SiC/SiO2 interface for both devices, which corresponded to a channel mobility of about 50 cm 2 /V· s [26]. Finally, the interface trap charge with a concentration of 2 × 10 10 cm −2 was considered in the SiC/polysilicon interface [27].

Optimization of the IHP-MOSFET
In power MOSFETs, the RON and BV are considered to be the most basic and important parameters. Figure 3 shows the influence of the width of the PSR (PW) on RON and BV characteristics in the IHP-MOSFET. As the PW increased, the current path decreased in the on-state but more of the electric field was dispersed by the PSR in the off-state. Therefore, an increase in PW caused an increase in RON and BV, and it can be seen that there is a trade-off relationship. We chose the PW = 2 μm result, which achieved the highest Baliga's figure of merit (BFOM = BV 2 /RON). It is noteworthy that PW shows a similar BFOM of over 1150 MW/cm 2 in the range of 1.8 to 2.2 μm, indicating sufficient process tolerances. Next, the influences of the distance between the P+ base region and PSR (PH) on blocking characteristics and reverse conduction characteristics are shown in Figure 4. The tables inserted in Figure 4 represent the changes in the BV and VF according to changes in the PH. Here, the VF is obtained at VGS = −5 V and IDS = −100 A/cm 2 . It can be seen that an increase in PH caused a decrease in both VF and BV. The reason for the decreasing BV was that the electric field became more concentrated in the PSR as the PH increased. On the other hand, the VF decreased owing to the increasing HJD area and a wider diode current path as the PH increased. We chose PH = 0.8 μm, which displayed the good trade-off relationship between the BV and VF. Next, the influences of the distance between the P+ base region and PSR (P H ) on blocking characteristics and reverse conduction characteristics are shown in Figure 4. The tables inserted in Figure 4 represent the changes in the BV and V F according to changes in the P H . Here, the V F is obtained at V GS = −5 V and I DS = −100 A/cm 2 . It can be seen that an increase in P H caused a decrease in both V F and BV. The reason for the decreasing BV was that the electric field became more concentrated in the PSR as the P H increased. On the other hand, the V F decreased owing to the increasing HJD area and a wider diode current path as the P H increased. We chose P H = 0.8 µm, which displayed the good trade-off relationship between the BV and V F .
It can be seen that the IHP-MOSFET featured much higher BV compared to the C-MOSFET in all the cases shown in Figure 4a. For better understanding of the BV improvement of the IHP-MOSFET, the electric field distributions of both devices when V GS = 0 V and V DS = 1.2 kV are shown in Figure 5. The result shows that the PSR effectively dispersed the electric field, so that the maximum electric field of the P+ base region (3.08 MV/cm) was much lower than that of the C-MOSFET (3.77 MV/cm). Therefore, the IHP-MOSFET has a higher BV compared to the C-MOSFET in all cases in Figure 4a. In addition, it was confirmed that the proposed device had a lower E MOX (2.78 MV/cm) Energies 2021, 14, 8582 6 of 12 than the C-MOSFET (3.11 MV/cm), despite the split-gate structure, owing to the electric field dispersion effect of the PSR. It is well-known that low E MOX helps improve oxide reliability [28].  It can be seen that the IHP-MOSFET featured much higher BV compared to the C-MOSFET in all the cases shown in Figure 4a. For better understanding of the BV improvement of the IHP-MOSFET, the electric field distributions of both devices when VGS = 0 V and VDS = 1.2 kV are shown in Figure 5. The result shows that the PSR effectively dispersed the electric field, so that the maximum electric field of the P+ base region (3.08 MV/cm) was much lower than that of the C-MOSFET (3.77 MV/cm). Therefore, the IHP-MOSFET has a higher BV compared to the C-MOSFET in all cases in Figure 4a. In addition, it was confirmed that the proposed device had a lower EMOX (2.78 MV/cm) than the C-MOSFET (3.11 MV/cm), despite the split-gate structure, owing to the electric field dispersion effect of the PSR. It is well-known that low EMOX helps improve oxide reliability [28]. Moreover, electron and hole current density distributions of both devices are shown in Figure 6 to confirm the unipolar action of the HJD. In the case of the C-MOSFET, the electron current flowed mainly in the junction between the P-base and the CSL, indicating  It can be seen that the IHP-MOSFET featured much higher BV compared to the C-MOSFET in all the cases shown in Figure 4a. For better understanding of the BV improvement of the IHP-MOSFET, the electric field distributions of both devices when VGS = 0 V and VDS = 1.2 kV are shown in Figure 5. The result shows that the PSR effectively dispersed the electric field, so that the maximum electric field of the P+ base region (3.08 MV/cm) was much lower than that of the C-MOSFET (3.77 MV/cm). Therefore, the IHP-MOSFET has a higher BV compared to the C-MOSFET in all cases in Figure 4a. In addition, it was confirmed that the proposed device had a lower EMOX (2.78 MV/cm) than the C-MOSFET (3.11 MV/cm), despite the split-gate structure, owing to the electric field dispersion effect of the PSR. It is well-known that low EMOX helps improve oxide reliability [28]. Moreover, electron and hole current density distributions of both devices are shown in Figure 6 to confirm the unipolar action of the HJD. In the case of the C-MOSFET, the electron current flowed mainly in the junction between the P-base and the CSL, indicating Moreover, electron and hole current density distributions of both devices are shown in Figure 6 to confirm the unipolar action of the HJD. In the case of the C-MOSFET, the electron current flowed mainly in the junction between the P-base and the CSL, indicating the activation of the PiN diode as shown in Figure 6b. On the other hand, the PiN diode was suppressed and the electron current only flowed to the HJD in the IHP-MOSFET (Figure 6a). As a result, it can be seen that the minority carriers (holes) induced by the PiN diode were effectively suppressed in the IHP-MOSFET (Figure 6c) compared to the C-MOSFET (Figure 6d).  Figure 6b. On the other hand, the PiN diode was suppressed and the electron current only flowed to the HJD in the IHP-MOSFET (Figure 6a). As a result, it can be seen that the minority carriers (holes) induced by the PiN diode were effectively suppressed in the IHP-MOSFET (Figure 6c) compared to the C-MOSFET (Figure 6d).  Figure 7 presents the forward conduction characteristics of the C-MOSFET and IHP-MOSFET. Due to the slightly increased cell pitch and the depletion region formed by the PSR, the proposed device had a slightly higher RON (1.88 mΩ·cm 2 ) compared to the C-MOSFET (1.74 mΩ·cm 2 ). However, the 8% increase in the RON was not insignificant and the ultimate increase in the BFOM (1179 MW/cm 2 in the IHP-MOSFET and 860 MW/cm 2 in the C-MOSFET) could cover this higher RON downside. The inset of Figure 7 shows the electron current density distributions of the IHP-MOSFET at VGS = 15 V and VDS = 20V. It can be seen that the HJD was safely turned off in the forward conduction.  Figure 7 presents the forward conduction characteristics of the C-MOSFET and IHP-MOSFET. Due to the slightly increased cell pitch and the depletion region formed by the PSR, the proposed device had a slightly higher R ON (1.88 mΩ·cm 2 ) compared to the C-MOSFET (1.74 mΩ·cm 2 ). However, the 8% increase in the R ON was not insignificant and the ultimate increase in the BFOM (1179 MW/cm 2 in the IHP-MOSFET and 860 MW/cm 2 in the C-MOSFET) could cover this higher R ON downside. The inset of Figure 7 shows the electron current density distributions of the IHP-MOSFET at V GS = 15 V and V DS = 20V. It can be seen that the HJD was safely turned off in the forward conduction. Figure 8 shows the parasitic capacitance characteristics of the C-MOSFET and IHP-MOSFET. For the capacitance simulation conditions, the gate voltage was fixed at 0 V and the frequency of the AC small signal was set to 1 MHz. The output capacitance (C OSS :C DS + C GD ) was almost the same for both devices, but the input capacitance (C ISS :C GD + C GS ) and C GD of the IHP-MOSFET were much lower than those of the C-MOSFET. To explain the reason for the reduction in the C GD , the C GD can be expressed by the following equation [29]:

Device Performance Comparison of Both Devices
where C OX means the gate oxide capacitance and C dep means the bulk depletion capacitance. The C OX component of the IHP-MOSFET was reduced compared to the C-MOSFET because of the reduction in the active gate area. Moreover, the C dep component of the proposed device decreased as the drain voltage increased because of the fast depletion in the N-drift region by the grounded PSR. Therefore, the C GD of the IHP-MOSFET was reduced by 74.4% compared to the C-MOSFET. Finally, the reduction in C ISS also originated from  Figure 8 shows the parasitic capacitance characteristics of the C-MOSFET and IHP-MOSFET. For the capacitance simulation conditions, the gate voltage was fixed at 0 V and the frequency of the AC small signal was set to 1 MHz. The output capacitance (COSS: CDS + CGD) was almost the same for both devices, but the input capacitance (CISS: CGD + CGS) and CGD of the IHP-MOSFET were much lower than those of the C-MOSFET. To explain the reason for the reduction in the CGD, the CGD can be expressed by the following equation [29]: where COX means the gate oxide capacitance and Cdep means the bulk depletion capacitance. The COX component of the IHP-MOSFET was reduced compared to the C-MOSFET because of the reduction in the active gate area. Moreover, the Cdep component of the proposed device decreased as the drain voltage increased because of the fast depletion in the N-drift region by the grounded PSR. Therefore, the CGD of the IHP-MOSFET was reduced by 74.4% compared to the C-MOSFET. Finally, the reduction in CISS also originated from the reduced active gate area. As a result, the IHP-MOSFET showed a 72.3% improvement in the high frequency figure of merit (HFFOM) compared to the C-MOSFET, indicating better dynamic performance.  Figure 9a shows the reverse recovery characteristics of the body diodes of the C-MOSFET and IHP-MOSFET, and Figure 9b shows the double-pulsed test circuit (DPT) for the reverse recovery and switching characteristics. In Figure 9a, the body diode of the IHP-MOSFET has a much smaller reverse recovery time (trr) and reverse recovery peak current (IRRM) than the C-MOSFET. Since the body diode of the C-MOSFET operated as a bipolar device, the electrons and holes moved when the diode was turned on. On the other hand, since the diode of the IHP-MOSFET operated as a unipolar device, only the electrons  IHP-MOSFET has a much smaller reverse recovery time (t rr ) and reverse recovery peak current (I RRM ) than the C-MOSFET. Since the body diode of the C-MOSFET operated as a bipolar device, the electrons and holes moved when the diode was turned on. On the other hand, since the diode of the IHP-MOSFET operated as a unipolar device, only the electrons moved from the N-drift to P+ polysilicon. Therefore, when the diode was turned off, the number of minority carriers remaining in the IHP-MOSFET was much smaller than that of the C-MOSFET, thereby having smaller t rr and I RRM . The reverse recovery charge (Q rr ) follows the equation: where t 1 is the first point at which the reverse recovery current becomes zero, and t 2 is the second point at which the reverse recovery current becomes 10% of the I RRM . The results showed that the Q rr of IHP-MOSET was 85.7% smaller than that of C-MOSFET. Table 2 summarizes the device characteristics of the C-MOSFET and IHP-MOSET.   Figures 10 and 11 show the switching waveforms and switching power losses of the two devices, respectively. The test circuit in Figure 9b was also used in the double-pulse switching simulation. In Figure 10, the IHP-MOSFET has the largest dVDS/dt during turnon and turn-off transients because of the smaller CGD compared to the C-MOSFET. In addition, the IHP-MOSFET showed a smaller peak current during switching turn-on transients. This was because of the improved reverse recovery characteristics of the proposed   Figures 10 and 11 show the switching waveforms and switching power losses of the two devices, respectively. The test circuit in Figure 9b was also used in the double-pulse switching simulation. In Figure 10, the IHP-MOSFET has the largest dV DS /dt during turn-on and turn-off transients because of the smaller C GD compared to the C-MOSFET.
In addition, the IHP-MOSFET showed a smaller peak current during switching turnon transients. This was because of the improved reverse recovery characteristics of the proposed device. As a result, the IHP-MOSFET boasts much shorter switching time and smaller switching energy loss compared to the C-MOSFET. The switching characteristics of both devices are summarized in Table 3.

Conclusions
A novel 1.2 kV class SiC IHP-MOSFET was proposed and investigated through numerical TCAD simulation. In addition, the possible fabrication procedures of an IHP-MOSFET were proposed to demonstrate the feasibility of the proposed device. Owing to

Conclusions
A novel 1.2 kV class SiC IHP-MOSFET was proposed and investigated through numerical TCAD simulation. In addition, the possible fabrication procedures of an IHP-MOSFET were proposed to demonstrate the feasibility of the proposed device. Owing to

Conclusions
A novel 1.2 kV class SiC IHP-MOSFET was proposed and investigated through numerical TCAD simulation. In addition, the possible fabrication procedures of an IHP-MOSFET were proposed to demonstrate the feasibility of the proposed device. Owing to the unipolar action of the HJD, composed of polysilicon and N-SiC, integrated in the mesa region, the proposed device featured superior reverse recovery characteristics compared to the C-MOSFET. The results showed that the t rr and the Q rr of the IHP-MOSFET were improved by 62.5% and 85.7%, respectively.
The PSR under the P+ polysilicon in the IHP-MOSFET effectively dissipated the electric field, resulting in a high BV and low E MOX . Therefore, the BFOM of the proposed device was improved by 37%, indicating a great trade-off between R ON and BV. Moreover, the C GD of the IHP-MOSFET was reduced by a factor of 3.9 because of the split-gate structure and grounded PSR. Furthermore, the results showed that the IHP-MOSFET boasted a much lower switching energy loss and shorter switching time.