Special Issue "Semiconductor Nanowires: From Synthesis and Characterization to Devices"
A special issue of Nanomaterials (ISSN 2079-4991).
Deadline for manuscript submissions: 22 December 2020.
Interests: Gallium oxide, gallium nitride, nanowires, electron microscopy, luminescence spectroscopy, complex architectures, doping, rare earth, transition metal, optical cavity
Nanowires – nanostructures with 1D aspect – have attracted huge attention of scientists from different fields during the last decades. In fact, they are one of the most studied types of nanostructured materials, having applications in fields such as electronics, photonics, energy, nano-bio interfaces or quantum devices. Particularly, semiconductor nanowires show unique properties with enormous versatility and are being explored theoretically and experimentally from both the fundamental and applied points of view.
The numerous growth and synthesis approaches allow fabrication of single nanowires as well as complex nanowire architectures with tuned physical and chemical properties, thoroughly studied thanks to advanced characterization techniques. Applications of nanowires in devices include nano-diodes and transistors, photonic structures such as LEDs and nano-lasers, sensors, ballistic conductors or quantum devices.
This special issue is aimed at reporting research on the different aspects related to semiconductor nanowires, spanning from their synthesis and characterization with advanced techniques, to applications in devices in which they are key elements.
- Synthesis and growth
- Complex architectures: axial and radial heterostructures, branched, patterned, etc.
- Doping and defect engineering
- Groups IV, II-VI, III-V, wide- and ultrawide-bandgap semiconducting oxides, perovskites, etc.
- Photonics, optoelectronics, plasmonics
- Quantum devices
- Piezotronics, piezo-phototronics
- Energy conversion and storage
Dr. Emilio Nogales
Manuscript Submission Information
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