Wide Bandgap Semiconductor: From Epilayer to Devices

Dear Colleagues,

According to the U.S. Department of Energy’s Advanced Research Project Agency for Energy, by 2030, 80 % of electricity will flow through a power electronic device. Power electronic devices are competent in controlling and converting electrical power consumption and are utilized in home appliances, automotives, industries, defense system, aerospace, renewable energy systems, and utility systems.  In the modern world, energy-efficient reliable electronic devices are inevitable to reduce power consumption. Recently, wide bandgap (WBG) semiconductors have emerged as potential candidates for next-generation power electronic devices with advantages such as larger operating temperature, energy efficiency, high carrier mobility, high critical breakdown fields, faster switching, and high radiation resistance. Silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga₂O₃), aluminum nitride (AlN), and diamond WBG power electronics devices are facilitating the miniaturization of devices with more reliability and efficiency.

The present Special Issue of Electronics is planned as a collection of reviews and research articles on the epitaxy of WBG semiconductors and devices related to the area. The potential topics of interests include but are not limited to research on epitaxy, simulations, characterizations, and devices of SiC, GaN, Ga₂O₃, AlN, and diamond.

Prof. Dr. Ray-Hua Horng
Dr. Giovanna Mura
Prof. Dr. Qixin Guo
Prof. Dr. Chin-Han(King) Chung
Dr. Ching-Lien Hsiao
Guest Editors

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