Silicon Carbide: Material Growth, Device Processing and Applications

Dear Colleagues,

Owing to its superior performance and higher energy efficiency with respect to silicon, silicon carbide (SiC) plays a pivotal role in modern power electronics, where it can be used in energy conversion systems, electric vehicles, transportation, etc.

Although commercial SiC (the 4H-SiC polytype) material quality and device technology are already mature and a large variety of devices are already on the market, considerable efforts are still being dedicated to further improving device performance across several application areas. For this purpose, a deeper understanding of the material properties, processing issues and device physics is required, which can also pave the way for the applications in other fields, such as quantum technologies, sensing and detecting.

This Special Issue is aimed at collecting papers on silicon carbide, covering relevant aspects from material growth through to device processing and applications.

The topics covered by the Special Issue include, but are not limited to:

• Bulk and epitaxial growth of SiC materials;
• Material characterization;
• Surfaces and interfaces in SiC devices;
• Fabrication processing (contacts, implantation doping, gate oxides, etc.);
• Power devices (Schottky Diodes, JBS, MOSFETs, BJT, etc.);
• Modelling and reliability;
• System applications (electric vehicles, railway, avionic, energy conversion, sensors, detectors, etc.);
• Radiation hardness of 4H-SiC devices.

Both concise reviews and original articles on new findings are welcome.

Dr. Marilena Vivona
Dr. Mike Jennings
Guest Editors

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