- Article
Structural, Surface, and Optical Properties of AlN Thin Films Grown on Different Substrates by PEALD
- Sanjie Liu,
- Yangfeng Li,
- Jiayou Tao,
- Ruifan Tang and
- Xinhe Zheng
Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN) thin films on Si (100), Si (111), and c-plane sapphire substrates at 250 °C. Trimethylaluminum and Ar/N2/H2 plasma were utilized as Al and N precursors, respectiv...