X-ray techniques provide powerful, non-destructive tools for structural characterization in semiconductor manufacturing and advanced packaging. Their strong penetration capability and sensitivity to multiple contrast mechanisms enable the investigati...
In this study, the ability of Ag3PO4 to achieve the photocatalytic degradation of quinoline yellow (QY) a hazardous and recalcitrant dye, under UVA and visible light was investigated. The photocatalyst Ag3PO4 was synthesized through a precipitation m...
The world is currently experiencing major advancement in the electrification of both the industrial and commercial sectors. This is part of an effort to reduce reliance on combustible fuels, reduce emissions, integrate renewable energy systems and in...
OEMT is an existing optimizing envelope method for thin-film characterization that uses only one transmittance spectrum, T(λ), of the film deposited on the substrate. OEMT computes the optimized values of the average thickness,
A new poly(azomethine) with improved solubility was successfully prepared by the polycondensation of terephthalaldehyde and 2,2-Bis[4-(4-aminophenoxy)phenyl]-hexafluoropropane (4-BDAF) under green chemistry conditions. This new polymer containing hex...
This article reports recent developments in modelling based on Finite Difference Time Domain (FDTD) and Finite Element Method (FEM) for dielectric resonator material measurement setups. In contrast to the methods of the dielectric resonator design, w...
Three means are investigated for further increasing the accuracy of the characterization of a thin film on a substrate, from the transmittance spectrum T(λ) of the specimen, based on the envelope method. Firstly, it is demonstrated that the accuracy...
Colloidal cubic silicon-carbide nanocrystals have been fabricated, characterized, and introduced into metal–insulator–semiconductor and metal–insulator–metal structures based on hafnium oxide layers. The fabricated structures were characterized throu...
Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterizatio...
This study focuses on the deposition of fullerene (C60) as thin film on glass substrate by ultrasonic chemical bath deposition (UCBD) processing, under ambient temperature. Highly effective results were obtained from the films based on the solution o...
Room-temperature semiconductor radiation detectors (RTSD) such as CdZnTe are popular in Computed Tomography (CT) imaging and other applications. Transport properties and material defects with respect to electron and hole transport often need to be ch...
In this work, we study the influence of the geometry of a thin film on its transmission spectrum, as measured on amorphous As-based chalcogenide layers grown onto 1-mm-thick soda-lime-silica glass substrates. A new method is suggested for a comprehen...
Self-heating modifies the electrical characteristics and reliability of power semiconductor devices, but direct temperature measurement often requires dedicated sensors or thermal instrumentation. This study develops a calibration-based electrical pr...
The Tauc–Lorentz–Urbach (TLU) dispersion model allows us to build a dielectric function from only a few parameters. However, this dielectric function is non-analytic and presents some mathematical drawbacks. As a consequence of this issue...
This article reviews the synthesis, structural and optical characterizations of some novel luminescent two dimensional organic-inorganic perovskite (2DOIP) semiconductors. These 2DOIP semiconductors show a self-assembled nano-layered structure, havin...
The chiral interaction between light and matter is intrinsically weak at the nanoscale, which leads to a sensitivity bottleneck in the detection of chiral samples by photoinduced force microscopy. To address this issue, we propose an enhancement stra...
The smart engineering of novel semiconductor devices relies on the development of optimized functional materials suitable for the design of improved systems with advanced capabilities aside from better efficiencies. Thereby, the characterization of t...
Doping semiconductor oxides with trace amounts of non-native elements can improve their properties such as bandgap and conductivity. The lack of local techniques makes the precise characterization of these materials difficult. Among the few technique...
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections....
Semiconductor lasers can exhibit complex dynamical behavior in the presence of external perturbations. Delayed optical feedback, re-injecting part of the emitted light back into the laser cavity, in particular, can destabilize the laser’s emiss...
Semiconductor layers employed in fabricating advanced node devices are becoming thinner and their electrical properties are diverging from those established for highly crystalline standards. Since these properties also change as a function of depth w...
Frequency locking to reference atomic lines using Rydberg electromagnetically induced transparency (EIT) has been recently introduced as an inexpensive and reliable technique for laser frequency stabilization. In this work, we carry out a systematic...
The hybrid film of molybdenum oxide (MoO3) and poly(3,4-ethylenedyoxithiophene) polystyrene sulfonate (PEDOT:PSS) is a promising candidate for use as hole transport layer (HTL) in low-cost devices. A fast, controllable and economic process was used t...
Solid-state wafers are indispensable components in material science as substrates for epitaxial homo- or heterostructures or carriers for two-dimensional materials. However, reliable determination of magnetic properties of nanomaterials in volume mag...
The applications of machine learning (ML) in power electronics are expanding with time, providing effective tools that reduce design complexity and enhance predictive accuracy. In high-power semiconductor devices, such as thyristors and high-power di...
The doping and crystallization of the molecular semiconductor formed from the magnesium phthalocyanine (MgPc) and 1-(4-Methoxyphenyl)-2,2,6,6-tetramethyl-5-phenylhepta-3,4-dienedioic (MTPDA) acid was carried out in this work. The crystals obtained we...
In this work, the solar light-induced redox photoactivity of ZnO semiconductor material was used to prepare CuxO-ZnO composite catalysts at room temperature with a control of the chemical state of the copper oxide phase. Cu2(I)O-ZnO and Cu(II)O-ZnO c...
Copper oxide (CuO) films were deposited onto glass substrates by the microwave assisted chemical bath deposition method, and varying the pH of the solution. The pH range was varied from 11.0 to 13.5, and the effects on the film properties were studie...
Charge trapping effects represent a major challenge in the performance evaluation and the measurement-based compact modeling of modern short-gate-length (i.e., ≤0.15 μm) Gallium Nitride (GaN) high-electron mobility transistors (HEMT) technology...
Gas sensors that are based on metal oxides are extensively used to detect gaseous compounds in many different applications. One of the main tasks for improving the sensor performances is to understand the mechanism at the base of the sensing properti...
In this work, a variety of semiconducting oxides were prepared and principally characterized by means of spectroscopic techniques (absorbance FT-IR, diffuse reflectance UV-Vis-NIR) to shed light on the electronic properties and defects involved at th...
Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as i...
In recent years, the use of high-power semiconductor devices has seen growing demand across various applications, including data centers, electric vehicles, and traction systems. However, increasing power densities may increase challenges in ensuring...
A3B5 nanowires are usually grown via the vapor-liquid-solid mechanism. Species from the vapor are incorporated into the nanowires using a catalyst droplet. Typically, the droplet is a low-melting-point eutectic alloy of catalyst and group III metal....
This review summarizes the use of Auger Electron Spectroscopy (AES) for microchemical analysis of two different types of dielectric/(Al,Ga)N-based systems: (i) extrinsic dielectric PECVD SiO2, ALD Al2O3, and ECR-CVD SiNx films on AlxGa1−xN/GaN...
This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the...
The current work presents a new structure based on Au/PVA/SiO2/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO2/Si using the spin-coating technique. The silicon...
Tin dioxide has huge potential and is widely studied and used in different fields, including as a sensitive material in semiconductor gas sensors. The specificity of the chemical activity of tin dioxide in its interaction with the gas phase is achiev...
We present the characterization of a pn-junction GaAs nanowire. For the characterization, current–voltage, electron-beam-induced current, cathodoluminescence, and electron holography measurements are used. We show that by combining information...
Orthorhombic κ-Ga2O3 thin films were grown for the first time on polycrystalline diamond free-standing substrates by metal-organic vapor phase epitaxy at a temperature of 650 °C. Structural, morphological, electrical, and photoelectronic pr...
This article focuses on the Na2O-Ga2O3-TiO2 system, which is barely explored in the study of transparent conductive oxides (TCOs). NaxGa4+xTin−4−xO2n−2 (n = 5, 6, and 7 and x ≈ 0.7–0.8) materials were characterized using...
Germanium is an excellent material candidate for various applications, such as field effect transistors and radiation detectors/multijunction solar cells, due to its high carrier mobilities and narrow bandgap, respectively. However, the efficient pas...
Graphitic carbon nitride (gCN) materials have been shown to efficiently perform light-induced water splitting, carbon dioxide reduction, and environmental remediation in a cost-effective way. However, gCN suffers from rapid charge-carrier recombinati...
Several, nearly-1-µ
This work introduces a novel method to characterize cross-linking differences in spincast polymers for waveguide applications. The method is based on a low-coherence interferometer which utilizes an imaging spectrometer to gather spatially resolved d...
We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method. As such, it became necessary to determine if RI cou...
Carbon, a compensator in GaN, is an inherent part of the organometallic vapor phase epitaxy (OMVPE) environment due to the use of organometallic sources. In this study, the impact of growth conditions are explored on the incorporation of carbon in Ga...
A method to characterize cross-linking differences in polymers such as waveguide polymers has been developed. The method is based on the scan-free information acquisition utilizing a low-coherence interferometer in conjunction with an imaging spectro...
Semiconductor materials are the basis of electronic devices employed in the communication and media industry. In the present work, we report the synthesis and characterization of mixed metal oxides (MOs) as p,n-junction photocatalysts, and demonstrat...
Solution-processable [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives with various end-capping groups, 2-(phenylethynyl)benzo[b]benzo[4,5]thieno[2,3-d]thiophene (Compound 1), 2-octyl-7-(5-(phenylethynyl)thiophen-2-yl)benzo[b]benzo[4,5]thieno[2,...
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