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Article

Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements

by
Leticia Vazquez Bengochea
1,*,
Yasa Sampurno
1,2,
Marcus Kavaljer
3,
Rob Johnston
4 and
Ara Philipossian
1,2
1
Department of Chemical and Environmental Engineering, University of Arizona, Tucson, AZ 85721, USA
2
Araca Inc., Tucson, AZ 85718, USA
3
K-Patents Oy, 01510 Vantaa, Finland
4
Yarbrough, a Watlow Company, Austin, TX 78758, USA
*
Author to whom correspondence should be addressed.
Micromachines 2018, 9(11), 542; https://doi.org/10.3390/mi9110542
Submission received: 2 October 2018 / Revised: 21 October 2018 / Accepted: 22 October 2018 / Published: 24 October 2018
(This article belongs to the Section A: Physics)

Abstract

We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method. As such, it became necessary to determine if RI could detect smaller changes in slurry composition and, therefore, provide a tighter control. Three industrially-relevant silica-based slurries, namely, Fujimi PL-7106, Klebosol 1501-50, and CMC W7801, were characterized using both densitometry and RI measurements. Initial solutions of the three slurries were prepared and increasingly small amounts of ultrapurified water (UPW) were added to study the change in slurry properties. Results showed that both density and RI decreased linearly with the addition of water for all three slurries, with the 1501-50 being the most sensitive to water addition. A linear correlation between the two properties was found, with R2 values that exceeded 0.95 in all cases. Furthermore, the approximate limit of detection of both metrology tools was estimated based on the slope of the fitting line and resolution. When compared to densitometry, RI was found to be the far superior method for detecting smaller changes in water concentration.
Keywords: semiconductor technology; chemical mechanical planarization; slurry characterization; in-line monitoring and control semiconductor technology; chemical mechanical planarization; slurry characterization; in-line monitoring and control

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MDPI and ACS Style

Vazquez Bengochea, L.; Sampurno, Y.; Kavaljer, M.; Johnston, R.; Philipossian, A. Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements. Micromachines 2018, 9, 542. https://doi.org/10.3390/mi9110542

AMA Style

Vazquez Bengochea L, Sampurno Y, Kavaljer M, Johnston R, Philipossian A. Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements. Micromachines. 2018; 9(11):542. https://doi.org/10.3390/mi9110542

Chicago/Turabian Style

Vazquez Bengochea, Leticia, Yasa Sampurno, Marcus Kavaljer, Rob Johnston, and Ara Philipossian. 2018. "Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements" Micromachines 9, no. 11: 542. https://doi.org/10.3390/mi9110542

APA Style

Vazquez Bengochea, L., Sampurno, Y., Kavaljer, M., Johnston, R., & Philipossian, A. (2018). Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements. Micromachines, 9(11), 542. https://doi.org/10.3390/mi9110542

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