III-V Optoelectronics and Semiconductor Process Technology

Dear Colleagues,

Wide-bandgap III-V semiconductor materials possess exceptional electrical and optical properties, making them highly promising candidates for a wide range of high-frequency, high-power, and optoelectronic devices. Researchers have extensively explored these materials for high-frequency RF amplifiers, high-power electronics, and CMOS transistors, due to their superior electron mobility and high breakdown voltage. In addition, their excellent optical properties, including high quantum efficiency and direct bandgap, have made them attractive for various optoelectronic applications, such as light-emitting diodes (LEDs), lasers, sensors, and photovoltaic cells.

The Special Issue "III-V Optoelectronics and Semiconductor Process Technology" in the Journal Micromachines invites high-quality contributions from both academia and industry. The topics covered include the epitaxial growth and fabrication of III-V semiconductors, device design and characterization, novel device concepts, and process technology for III-V-based devices. The Special Issue also covers the use of III-V materials in various applications, such as LEDs, lasers, photovoltaic cells, and sensors.

We look forward to receiving your submissions to this Special Issue.

Dr. Hsin-Chu Chen
Prof. Dr. Hao-Chung Kuo
Prof. Dr. Yi-Jen Chiu
Guest Editors

Manuscript Submission Information

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