Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE
Ciarkowski, T.; Allen, N.; Carlson, E.; McCarthy, R.; Youtsey, C.; Wang, J.; Fay, P.; Xie, J.; Guido, L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials 2019, 12, 2455. https://doi.org/10.3390/ma12152455
Ciarkowski T, Allen N, Carlson E, McCarthy R, Youtsey C, Wang J, Fay P, Xie J, Guido L. Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE. Materials. 2019; 12(15):2455. https://doi.org/10.3390/ma12152455
Chicago/Turabian StyleCiarkowski, Timothy, Noah Allen, Eric Carlson, Robert McCarthy, Chris Youtsey, Jingshan Wang, Patrick Fay, Jinqiao Xie, and Louis Guido. 2019. "Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE" Materials 12, no. 15: 2455. https://doi.org/10.3390/ma12152455