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Open AccessReview

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

1
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
2
Materials Characterization and Preparation Center, Southern University of Science and Technology, Shenzhen 518055, Guangdong, China
3
Shenzhen Key Laboratory of the Third Generation Semi-conductor, Shenzhen 518055, Guangdong, China
4
GaN Device Engineering Technology Research Center of Guangdong, Shenzhen 518055, Guangdong, China
*
Authors to whom correspondence should be addressed.
Electronics 2018, 7(12), 377; https://doi.org/10.3390/electronics7120377
Received: 31 October 2018 / Revised: 20 November 2018 / Accepted: 27 November 2018 / Published: 3 December 2018
(This article belongs to the Special Issue Nanoelectronic Materials, Devices and Modeling)
GaN based high electron mobility transistors (HEMTs) have demonstrated extraordinary features in the applications of high power and high frequency devices. In this paper, we review recent progress in AlGaN/GaN HEMTs, including the following sections. First, challenges in device fabrication and optimizations will be discussed. Then, the latest progress in device fabrication technologies will be presented. Finally, some promising device structures from simulation studies will be discussed. View Full-Text
Keywords: AlGaN/GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode AlGaN/GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode
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MDPI and ACS Style

Zeng, F.; An, J.X.; Zhou, G.; Li, W.; Wang, H.; Duan, T.; Jiang, L.; Yu, H. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. Electronics 2018, 7, 377.

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