By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO2 and at the HfO2/InGaAs interfaces are studi...
In an ionizing radiation environment, the formation of interface traps affects transistor performance, which may lead to device failure. This article reviews interface trap formation mechanisms in silicon-based devices. It explores interface trap typ...
This article reviews the properties and formation process of interface traps in MOS and linear bipolar devices. Transistors are the core components of modern electronic devices, and their performance and reliability directly affect the performance of...
Three-dimensional bulk fin-type field-effect transistors (FinFETs) have been the dominant devices since the sub-22 nm technology node. Electrical characteristics of scaled devices suffer from different process variation effects. Owing to the trapping...
We present a Sentaurus TCAD model calibrated for the hydrogen-terminated diamond p-channel MOSFET reported by Hirama et al. and validated using the published transfer characteristics. We used the calibrated model to analyze threshold voltage (Vth) an...
In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiNx gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrog...
Interface traps between a gate insulator and beta-gallium oxide (ÎČ-Ga2O3) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature...
Copper (Cu) in steel production can be a residual element, causing challenges during steel processing, as well as an alloying element, improving corrosion resistance and providing hardenability by nanosized precipitates. For the transition toward a g...
The creation of carbon nanotubes has sparked a paradigm shift in the post-silicon era because of their decent electronic and optical properties. However, interface traps pose an obstacle in the realization of high-performance carbon nanotube field-ef...
The interface and bulk trap densities were separately extracted from self-aligned top-gate (SA-TG) coplanar indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using the low-frequency capacitanceâvoltage (CâV) characteristics and space-char...
Ferroelectric materials have received significant attention as next-generation materials for gates in transistors because of their negative differential capacitance. Emerging transistors, such as the negative capacitance field effect transistor (NCFE...
This study analyzed the low-frequency noise characteristics of nanosheet field-effect transistors (NSFETs) using technology computer-aided design (TCAD) simulations. In particular, the effects of shallow trench isolation (STI) depth and gate–in...
An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in 3D integration using high-frequency capacitance–voltage technique is proposed. First, an accurate high-frequency capacitance–voltage model is d...
We investigate the effect of AlGaN barrier thickness (23, 15, and 7 nm) on the transport and switching characteristics of AlScN/HfO2/AlGaN/GaN ferroelectric high-electron-mobility transistors (FeHEMTs). While the 7 nm device exhibits the largest appa...
In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFE...
The performance and reliability of the state-of-the-art power 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) are affected by electrically active defects at and near the interface between SiC and the gate dielectric. S...
In this paper the effects of 5 MeV proton irradiation on nitrided SiO2/4H-SiC metal–oxide–semiconductor (MOS) capacitors are studied in detail and the related mechanisms are revealed. The density of interface states (Dit) is increased wit...
The mitigation of interfacial charge accumulation in solution-processed organic light-emitting diodes (s-OLEDs) is an effective method to improve device performance. In this study, the polar solvent vapor annealing (PSVA) method was used to treat two...
We have simulated a monolithic three-dimensional inverter (M3DINV) structure by considering the interfacial trap charges generated thermally during the monolithic three-dimensional integration process. We extracted the SPICE model parameters from M3D...
This study proposes an analysis of the physics-based TCAD (Technology Computer-Aided Design) simulation procedure for GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device structures grown on Si (111) substrate which is calibrated against mea...
Frequency dispersion in the accumulation region seen in multifrequency capacitance–voltage characterization, which is believed to be caused mainly by border traps, is a concerning issue in present-day devices. Because these traps are a fundamen...
Hydrogen trapping at carbide/matrix interfaces is important for improving the resistance of steels to hydrogen embrittlement. In this work, the segregation behavior of hydrogen at the coherent α-Fe/V4C3 interface was investigated by first-princ...
We aimed to fabricate reliable memory devices using HfO2, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and...
This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed...
Ions in liquid helium exist in their simplest form in two configurations, as negatively charged “electron bubbles” (electrons in a void of about 35 Å in diameter) and as positive “snowballs” (He+ ions surrounded by a sph...
This study employed low-pressure chemical vapor deposition (LPCVD) SiNx as both the gate dielectric layer and surface passivation layer, systematically investigating the effects of different growth conditions on the dielectric layer quality, two-dime...
Asthma and chronic obstructive pulmonary disease (COPD) are distinct chronic airway diseases with different pathophysiological mechanisms, but they may coexist and share clinical, functional, inflammatory, and structural features. The historical term...
Silicon-based vertical double-diffused MOSFET (VDMOS) devices are important components of the power system of spacecraft. However, VDMOS is sensitive to the total ionizing dose (TID) effect and may have TID response variability. The within-batch TID...
Polymer nanodielectrics present a particularly challenging materials design problem for capacitive energy storage applications like polymer film capacitors. High permittivity and breakdown strength are needed to achieve high energy density and loss m...
Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited b...
A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias condit...
Dielectric breakdown is a significant property for the insulation system in high voltage power equipment. This paper is dedicated to the improvement of dielectric breakdown by surface-functionalized nanoparticles in low-density polyethylene (LDPE). P...
This study presents the characteristics of HfAlO films for a series of Al incorporation ratios into a HfO2 dielectric by atomic layer deposition on a Si substrate. A small amount of Al doping into the HfO2 film can stabilize the tetragonal phase of t...
Since the addition of Al to high-Mn steels is known to reduce their sensitivity to hydrogen-induced delayed fracture, we investigate possible trapping effects connected to the presence of Al in the grain interior employing density-functional theory (...
The trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injectio...
The interface between the semiconductor and the dielectric layer plays a crucial role in organic field-effect transistors (OFETs) because it is at the interface that charge carriers are accumulated and transported. In this study, four zwitterionic be...
Trapped space charges in epoxy composite distort the electric field, which will induce the failure of the insulation system, and nano graphene oxide may inhibit the curing behavior of epoxy resin matrix. This paper analyzes how the two interfaces aff...
In this study, the electrical properties of Al2O3 film were analyzed and optimized to improve the properties of the passivation layer of CMOS image sensors (CISs). During Al2O3 deposition processing, the O2 plasma exposure time was adjusted, and H2 p...
The assembly in solution of the cationic polymer poly(diallyldimethylammonium chloride) (PDADMAC) and two different anionic surfactants, sodium lauryl ether sulfate (SLES) and sodium N-lauroyl-N-methyltaurate (SLMT), has been studied. Additionally, t...
In this paper, the 650 V N-channel GaN MOSFETs are chosen as the research object to study the radiation and annealing effects under 1 MeV electron irradiation. The output, transfer, and breakdown characteristics are measured before and after electron...
Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance&n...
Polarization and traps determine the electrical property of oil-paper insulation, but most attention has been paid to the modification of insulating oil with nanoparticles, so there are is little research about oil-impregnated paper, and the origin f...
In this paper, an InGaZnO thin-film transistor (TFT) based on plasma oxidation of silicon nitride (SiNx) gate dielectric with small subthreshold swing (SS) and enhanced stability under negative bias illumination stress (NBIS) have been investigated i...
Understanding the behavior of surfactants at interfaces is crucial for many applications in materials science and chemistry. Optical tweezers combined with trajectory analysis can become a powerful tool for investigating surfactant characteristics. I...
This research investigates a vertically structured Ge-on-Si avalanche photodetector (APD) fabricated in a separate absorption, charge, and multiplication configuration. The application of ramp gating enables reverse bias beyond the punch-through volt...
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. However, in contrast to Si-based devices, the introducti...
Space charge accumulation greatly influences the dielectric performance of epoxy composites under high voltage. It has been reported that nano-fillers can suppress the charge accumulation in the bulk of insulation materials. However, it is still uncl...
Solution processed γ-Fe2O3 nanoparticles via the solvothermal colloidal synthesis in conjunction with ligand-exchange method are used for interface modification of the top electrode in inverted perovskite solar cells. In comparison to more conv...
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented performance in terms of power, frequency, and efficiency. Application of metal-insulator-semiconductor (MIS) gate structure has enabled further development of these devic...
High-voltage direct-current composite insulators are faced with various challenges during operation, such as creeping discharge, umbrella skirt damage, abnormal heating and insulator breakage. Among them, the aging of the interface between the core r...
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