Radiation Effects of Advanced Electronic Devices and Circuits

Dear Colleagues,

Research on the effects of radiation on advanced electronic devices and integrated circuits has increased rapidly over the last few years, resulting in many interesting approaches to the modeling of radiation effects and the design of advanced radiation-hardened electronic devices and integrated circuits. This research is strongly driven by the growing need for radiation-hardened higher-performance electronics for space applications like planetary exploration, high-energy physics experiments such as those on the large hadron collider at CERN, and many nuclear applications (e.g., nuclear energy and safety management). With the progressive scaling of integrated circuit technologies and the growing complexity of electronic devices, their susceptibility to ionizing radiation has raised many exciting challenges which are expected to drive research in the coming decade. Although total ionizing dose (TID) effects in bulk CMOS is well known, little is known on the radiation performance of SOI, FinFET, GAA (gate-all-around), 3D stacking technologies or novel devices based on carbon nanotubes, graphene and other advanced materials. Regarding single-event effects (SEEs), the continued scaling has drastically enhanced the charge-sharing effect, which leads to multiple-cell upsets and multi-pulse propagations and requires new solutions to reduce the radiation sensitivity in advanced digital/analog/ RF/power/mixed-signal devices and integrated circuits. The radiation hardness assurance of complex systems with multiple components in mixed technologies also necessitates new testing paradigms and verification methodologies to limit the time and cost of evaluation.

The main aim of this Special Issue is to seek high-quality submissions that highlight emerging applications and address recent breakthroughs in modeling radiation effects in advanced electronic devices and integrated circuits; radiation-hardening techniques for advanced digital, analog, RF and mixed-signal integrated circuits; and testing methodologies for radiation-effect characterization and hardness evaluation. The topics of interest include, but are not limited to:

• Basic mechanisms of radiation effects in advanced electronic devices, integrated circuits and novel devices.
• Compact modeling of radiation effects in advanced electronic devices, integrated circuits and novel devices.
• Radiation hardening and fault tolerance for advanced electronic devices, integrated circuits and novel devices.
• Radiation environment influence: space, atmospheric, terrestrial and artificial.
• Radiation effect characterization and radiation hardness assurance testing.
• New developments of interest to the radiation effect community.

Prof. Dr. Yaqing Chi
Dr. Li Cai
Dr. Chang Cai
Guest Editors

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