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Open AccessArticle

Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress

1
School of Science and Engineering, Department of EEE, Canadian University of Bangladesh, Dhaka 1213, Bangladesh
2
School of Electrical Engineering, University of Ulsan, Ulsan 44610, Korea
3
School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea
*
Authors to whom correspondence should be addressed.
Nanomaterials 2020, 10(3), 527; https://doi.org/10.3390/nano10030527
Received: 3 February 2020 / Revised: 1 March 2020 / Accepted: 12 March 2020 / Published: 15 March 2020
This study represents a comparison of the border trap behavior and reliability between HfO2 and ZrO2 films on n-In0.53Ga0.47As with an Al2O3 interfacial layer. The effect of different post metal annealing conditions on the trap response was analyzed and it was found that the N2:H2 mixed FGA passivates the border trap quite well, whereas N2-based RTA performs better on interface traps. Al2O3/HfO2 showed more degradation in terms of the threshold voltage shift while Al2O3/ZrO2 showed higher leakage current behavior. Moreover, Al2O3/ZrO2 showed a higher permittivity, hysteresis, and breakdown field than Al2O3/HfO2. View Full-Text
Keywords: III–V semiconductor; atomic layer deposition; border trap; constant voltage stress; high-k; interface trap; post metal annealing III–V semiconductor; atomic layer deposition; border trap; constant voltage stress; high-k; interface trap; post metal annealing
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Rahman, M.M.; Kim, D.-H.; Kim, T.-W. Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress. Nanomaterials 2020, 10, 527.

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