Recent Modular Multilevel Converter (MMC) topology allows for drastic improvements in power electronic conversion such as higher energy quality, lower power semiconductors electrical stress, decreased Electro-Magnetic Interferences (EMI), and reduced...
This paper proposes a high-efficiency DC–DC converter with charge-recycling gate-voltage swing control with a light load. By achieving a variable gate-voltage swing in a very efficient manner by charge recycling, the power efficiency has been s...
While operating an electric drive under different load conditions, power switch devices experience thermal stress which provokes wear-out failures and compromises lifetime. In this paper, a model-based dynamic gate voltage control strategy is propose...
With the advent of direct current (DC) loads such as LED lighting, IT equipment, electric vehicles, and DC powers generated from renewable energy sources, low voltage DC (LVDC) distribution system is becoming a hot issue. One of the hurdles in the LV...
Finite Control Set Model Predictive Control emerges as a promising method for controlling power electronics inverters, outperforming traditional linear techniques. However, implementing Finite Control Set Model Predictive Control on conventional proc...
The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation...
Silicon carbide (SiC) MOSFETs are promising for high-efficiency, high-power-density power conversion owing to their high breakdown capability, fast switching speeds, and low switching losses. However, parasitic parameters can cause severe voltage/cur...
Single-phase AC–AC converters with a direct power conversion approach are receiving rapid development as they have the ability to produce the regulated non-inverting and inverting form of the input voltage at the output. This feature enables th...
Frequency, tie-line power, and the terminal voltages of synchronized generators must all be kept within prescribed limits to ensure the stability of an interconnected power grid through combined automatic generation control (AGC) and automatic voltag...
The problem of current sharing imbalance in the parallel connection of IGBT multi-modules affects the wide-scale application of parallel IGBT. The current imbalance problem in the dynamic process is mainly caused by the difference in control loop par...
This paper presents a regulated switched-capacitor (SC) charge pump for low-voltage battery-powered systems. The circuit regulates a 2.5 V output over a wide input range. Its dual-conversion-ratio architecture automatically switches between 3×...
Emerging spintronics devices in recent research have received much interest in various fields. Their unique physical aspects are being explored to keep Moore’s law alive. Therefore, the hardware security aspects of system-on-a-chip (SoC) design...
The conversion and control for the utilization of power generated from energy sources can be performed using a power electronic converter system. The voltage source inverter (VSI) is one of the commonly used converter topologies, being controlled by...
Power electronic converters are used for an efficient and controlled conversion of power generated from renewable energy sources and can interface generated power to the grid. Among available power converters, voltage source inverters (VSIs) have bee...
Finite set-model predictive control (FS-MPC) is used for power converters and drives having unique advantages as compared to the conventional control strategies. However, the computational burden of the FS-MPC is a primary concern for real-time imple...
The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke...
Background and Objectives: Epilepsy, known as an unprovoked seizure, arises from the human brain. Genetics plays a fundamental role in the development and progression of the disorder. This study aimed to investigate the influence of voltage-gated K+...
This paper presents the design of a predictive controller for a boost converter and validation through real-time simulation. First, the boost converter was mathematically modeled, and then the electronic components were designed to meet the operation...
This work describes an efficient implementation in terms of computation time and resource usage in a Field-Programmable System-On-Chip (FPSoC) of a Finite Control Set Model Predictive Control (FCS-MPC) algorithm. As an example, the FCS-MPC implementa...
Recent advances in power converter applications with highly demanding control goals require the efficient implementation of superior control strategies. However, the real-time application of such control strategies demands high computational power th...
Class-D power amplifiers driving variable loads, such as inductively coupled plasma (ICP), typically require an impedance matching network, which has a relatively slow matching speed, generally in the millisecond range. To address this issue, this pa...
This paper proposes a closed-loop control implementation fully-embedded into an FPGA for a permanent-magnet synchronous motor (PMSM) drive based on a four-level active-clamped converter. The proposed FPGA controller comprises a field-oriented control...
In this paper, the rotor position estimation performance of the sensorless scheme for permanent magnet synchronous motors (PMSMs) implemented through the injection of high-frequency square-wave voltage according to the frequency of the square-wave vo...
Insecticide resistance surveillance systems for vector-borne diseases are crucial for early detection of resistance and the implementation of evidence-based resistance management strategies. While insecticide susceptibility bioassays are typically co...
This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET...
Compared to single-gate CNTFET, dual-gate structures have better electrostatic control over nanowire conductive channels. However, currently, there is insufficient research on the back-gate effect in a compact model of dual-gate CNTFET. This paper pr...
N-type voltage-gated calcium channel controls the release of neurotransmitters from neurons. The association of other voltage-gated calcium channels with epilepsy is well-known. The association of N-type voltage-gated calcium channels and pain has al...
According to the International Electrotechnical Commission, medium voltage ranges from 1 kV to 36 kV. In this voltage range, the field of power electronics has been focusing on developing power converters with high efficiency. Converters for such app...
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance an...
This study presents a comprehensive experimental and theoretical investigation into dual-gate field-emission devices fabricated using a standard 0.35 µm CMOS-MEMS process. Two emitter configurations, the concave-tip and triangular-tip, are char...
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric field...
Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated desig...
Dual-gate metal-oxide-semiconductor transistors have attracted considerable interest due to their high threshold voltage control capability, higher drain current, and the ability to alleviate the impact of carrier surface scattering at the channel/di...
In this work, the electrostatic discharge (ESD) characteristics of a pMOS-triggered bidirectional silicon-controlled rectifier (PTBSCR) that was fabricated in a 0.18 μm silicon-on-insulator (SOI) bipolar-CMOS-DMOS (BCD) process, is investigated. T...
The high switching speed of SiC MOSFETs can induce resonance between parasitic inductors and capacitors, owing to rapid changes in current and voltage, leading to excessive crosstalk parasitic oscillation. This can increase SiC MOSFETs’ gate ox...
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semicon...
In view of the stability of the unmanned aerial vehicle (UAV) power system, this paper found that the voltage spike generated by IGBT mainly occurs when the IGBT is turned off in the study of the power system interior and IGBT drive and overvoltage p...
Recently, we proposed the spin-selective coherent electron transfer in a silicon-quantum-dot array. It requires temporal tuning of two pulses of an oscillating magnetic field and gate voltage control. This paper proposes a simpler method that require...
AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the su...
Electric-field control of spin dynamics is significant for spintronic device applications. Thus far, effectively electric-field control of magnetic order, magnetic damping factor and spin–orbit torque (SOT) has been studied in magnetic material...
High-power IGBTs are used in power electronic converters in a variety of applications: traction drives, renewable power converters, mining equipment, oil and water pumping, and so on. To control a transistor, a special gate driver board is required....
In this paper, we propose an optimized device structure with a highly stable process that addresses threshold voltage shift issues in the String-Select-Line (SSL) and Ground-Select-Line (GSL) gates using ferroelectric memory in 3D NAND flash memory a...
For high-frequency switching applications, silicon carbide (SiC) devices are more suitable than silicon-based devices, which is conducive to improving the efficiency and power density of power electronic equipment. However, as the switching frequency...
To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-co...
In floating gate compute-in-memory (CIM) chips, due to the gate equivalent capacitance of the large-scale array and the parasitic capacitance of the long-distance transmission wire, it is difficult to balance the switching speed and area of the word...
A novel inhibitable and firing threshold voltage tunable vertical nanowire (NW) single transistor neuron device with core–shell dual-gate (CSDG) was realized and verified by TCAD simulation. The CSDG NW neuron is enclosed by an independently accessed...
Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are widely used in high-frequency applications owing to their fast-switching speed and low switching loss. However, the large dVDS/dt transients can cause severe crosstalk, current oversho...
In this study, the nonlinearity characteristics of bilayer graphene field-effect transistors (Bi-GFETs) are analyzed by using a small-signal equivalent circuit. The static nonlinearity is determined by applying mathematical operation on the drain cur...
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only show...
Power electronics devices are made from semiconductor switches such as thyristors, MOSFETs, and diodes, along with passive elements of inductors, capacitors, and resistors, and integrated circuits. They are heavily used in power processing for applic...
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