Advanced Micro-Integrated Power Devices and Gate Driving Technologies

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E:Engineering and Technology".

Deadline for manuscript submissions: 31 October 2026 | Viewed by 573

Special Issue Editor


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Guest Editor
Department of Electrical Engineering, Tsinghua University, Beijing 100084, China
Interests: DC grid-oriented power electronic chips and equipment; electromagnetic transient and EMC protection

Special Issue Information

Dear Colleagues,

Power electronics for renewable generation, HVDC transmission, electrified transportation, and smart grids is shifting toward higher power density, faster switching, and greater intelligence. Meeting these goals increasingly relies on micro-integrated solutions that co-design power devices, gate drivers, sensing, isolation, and packaging to control parasitics, improve EMI/EMC, manage heat, and enhance reliability.

We are pleased to invite you to contribute to this Special Issue in Micromachines, a journal dedicated to micro/nano-scaled structures, materials, devices, and systems.

This Special Issue aims to present original research articles and reviews on micro/nano-integrated power devices and gate driving technologies, as well as microsystem-enabled sensing and integration for next-generation smart power modules.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Micro-integrated driver ICs and protection;
  • Embedded micro-sensing of current/voltage/junction temperature/electric field;
  • High-voltage isolation (BCD/SOI) and advanced fabrication;
  • Low-inductance packaging;
  • Thermal management;
  • EMI/EMC modeling and mitigation;
  • SiC/GaN driving and integration;
  • Power system-on-chip;
  • Multi-physics modeling and reliability.

Dr. Zhanqing Yu
Guest Editor

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Keywords

  • micro-integrated power electronics
  • gate driver IC
  • micro-sensing
  • high-voltage isolation
  • thermal management
  • EMI/EMC
  • wide-bandgap devices
  • smart power modules
  • reliability

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Published Papers (1 paper)

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Research

20 pages, 5475 KB  
Article
Design of a SiC MOSFET Gate Driver Chip Based on Adaptive Active Drive Technology
by Qidong Li, Yuxin Zhang, Baoqiang Huang, Weihua Zhang, Chen Chen, Jianming Lei, Desheng Zhang, Run Min and Qiaoling Tong
Micromachines 2026, 17(5), 558; https://doi.org/10.3390/mi17050558 - 30 Apr 2026
Viewed by 332
Abstract
Silicon carbide (SiC) MOSFETs are promising for high-efficiency, high-power-density power conversion owing to their high breakdown capability, fast switching speeds, and low switching losses. However, parasitic parameters can cause severe voltage/current overshoot and oscillation during high-speed switching, leading to electromagnetic interference and degraded [...] Read more.
Silicon carbide (SiC) MOSFETs are promising for high-efficiency, high-power-density power conversion owing to their high breakdown capability, fast switching speeds, and low switching losses. However, parasitic parameters can cause severe voltage/current overshoot and oscillation during high-speed switching, leading to electromagnetic interference and degraded performance. To address this issue, this study analyzes the mechanisms of current overshoot during turn-on and voltage overshoot during turn-off, and presents an adaptive active gate driver chip based on a three-stage driving current control strategy. By identifying key switching intervals and regulating segmented gate-drive current, the proposed chip can effectively suppress overshoot while reducing the switching loss. During turn-on, cross-cycle switching point regulation based on Miller plateau tracking is proposed to achieve adaptive control under different operating conditions, while the turn-off control is realized by peak sampling of the drain–source voltage. The chip was fabricated in the 180 nm BCD process. Compared with a conventional passive driver, the proposed driver reduces turn-on loss by 35.1% at 400 V/40 A under a dvDS/dt of 4.8 V/ns and reduces turn-off loss by 33.2% under a vDS overshoot of nearly 50 V. These results show that the proposed chip improves SiC MOSFET switching performance and provides a practical gate-driving solution. Full article
(This article belongs to the Special Issue Advanced Micro-Integrated Power Devices and Gate Driving Technologies)
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