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Open AccessArticle

Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors

1
School of Computer Science and Electronic Engineering, Bangor University, Dean Street, Bangor LL57 1UT, UK
2
Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(10), 643; https://doi.org/10.3390/mi10100643
Received: 15 August 2019 / Revised: 20 September 2019 / Accepted: 23 September 2019 / Published: 25 September 2019
(This article belongs to the Special Issue Organic Electronic Devices)
To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 1011 cm−2). View Full-Text
Keywords: organic memory transistors; 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene); graphene oxide; cross-linked poly(methyl methacrylate) PMMA organic memory transistors; 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene); graphene oxide; cross-linked poly(methyl methacrylate) PMMA
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MDPI and ACS Style

Al-shawi, A.; Alias, M.; Sayers, P.; Mabrook, M.F. Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors. Micromachines 2019, 10, 643.

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