Wide-Bandgap Semiconductor Devices: Materials, Fabrication, and Applications, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 25 January 2026 | Viewed by 227

Special Issue Editors


E-Mail Website
Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: wide-bandgap semiconductor materials; semiconductor devices

E-Mail Website
Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: power semiconductor device; device reliability; power module package
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710017, China
Interests: power semiconductor devices; wide-bandgap semiconductor devices; semiconductor device fabrication; semiconductor device reliability
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor devices play a pivotal role in modern electronics, facilitating the advancement of increasingly intricate and compact electronic systems. These systems are now ubiquitous across every facet of contemporary information society. In order to cater to diverse application requirements, modern semiconductor devices utilize a variety of materials, such as silicon (Si), gallium arsenide (GaAs), germanium (Ge), silicon carbide (SiC), and diamond. Moreover, there is a continual escalation in integration levels, accompanied by a corresponding increase in the complexity of fabrication processes. The principal factors shaping the trajectory of modern semiconductor device development include the intended application domains, the selection of materials for device fabrication, and the meticulous engineering of fabrication processes.

This Special Issue aims to provide a comprehensive overview of the latest advancements in emerging semiconductor devices, with a particular focus on the materials utilized, fabrication techniques employed, and the wide range of applications that these devices enable. Researchers and academics are invited to contribute original research papers and review articles that showcase innovative approaches and breakthroughs in the field of semiconductor devices, helping to pave the way for the next generation of electronic technologies.

Dr. Jie Su
Dr. Xi Jiang
Dr. Song Yuan
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-bandgap semiconductor materials and devices
  • power semiconductor devices
  • semiconductor performance characterization
  • power electronics
  • semiconductor device fabrication
  • semiconductor device reliability

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • e-Book format: Special Issues with more than 10 articles can be published as dedicated e-books, ensuring wide and rapid dissemination.

Further information on MDPI's Special Issue policies can be found here.

Related Special Issue

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

18 pages, 16409 KiB  
Article
Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices
by Li Liu, Yulu Zhen, Siqiao Li, Bo Pang and Kai Zeng
Micromachines 2025, 16(5), 514; https://doi.org/10.3390/mi16050514 - 27 Apr 2025
Viewed by 157
Abstract
Single UIS and repetitive UIS experiments are performed in this article to expound physical failure mechanisms in P-GaN HEMT devices. Vpeak and Ipeak are used as metrics to evaluate the degradation of electrical parameters. In the single UIS tests, different load [...] Read more.
Single UIS and repetitive UIS experiments are performed in this article to expound physical failure mechanisms in P-GaN HEMT devices. Vpeak and Ipeak are used as metrics to evaluate the degradation of electrical parameters. In the single UIS tests, different load inductors, off-gate voltages, and ambient temperatures are chosen as variables to observe the failure phenomena in the device under test (DUT), while in the repeated UIS tests, the threshold voltage, on-state resistance, blocking characteristics, and gate leakage current degradation and recovery are analyzed, and it is concluded that Vth presents a negative shift, Ron and BV are restored to their initial value, and gate leakage shows a significant reduction at first and then, after a duration of lagging, gradually recovers to some extent, but is unable to achieve its initial value. Combining failure point analysis via decapping with TCAD simulation and validation, it is found that hole trapping and detrapping in the p-GaN region dominate Vth and Igss degradation, while electron traps in the buffer dominate Ron and BV degradation. Full article
Show Figures

Figure 1

Back to TopTop