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Appl. Sci. 2018, 8(8), 1341;

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

Research Center for Organic Electronics (ROEL), Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
Yokohama R&D Center, Mitsubishi Chemical Corporation, 1000 Kamoshida-cho, Aoba-ku, Yokohama, Kanagawa 227-8502, Japan
Authors to whom correspondence should be addressed.
Received: 13 July 2018 / Revised: 2 August 2018 / Accepted: 8 August 2018 / Published: 10 August 2018
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
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Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices. View Full-Text
Keywords: organic transistor; dual-gate; carrier distribution; simulation organic transistor; dual-gate; carrier distribution; simulation

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Shiwaku, R.; Tamura, M.; Matsui, H.; Takeda, Y.; Murase, T.; Tokito, S. Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors. Appl. Sci. 2018, 8, 1341.

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