Next Article in Journal
Prototype Design and Performance Tests of Beijing Astronaut Robot
Next Article in Special Issue
Determination of Interface-State Distributions in Polymer-Based Metal-Insulator-Semiconductor Capacitors by Impedance Spectroscopy
Previous Article in Journal
A New Passive Islanding Detection Solution Based on Accumulated Phase Angle Drift
Previous Article in Special Issue
Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessFeature PaperArticle
Appl. Sci. 2018, 8(8), 1341; https://doi.org/10.3390/app8081341

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

1
Research Center for Organic Electronics (ROEL), Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan
2
Yokohama R&D Center, Mitsubishi Chemical Corporation, 1000 Kamoshida-cho, Aoba-ku, Yokohama, Kanagawa 227-8502, Japan
*
Authors to whom correspondence should be addressed.
Received: 13 July 2018 / Revised: 2 August 2018 / Accepted: 8 August 2018 / Published: 10 August 2018
(This article belongs to the Special Issue Semiconducting Polymer for Organic Transistors)
Full-Text   |   PDF [1979 KB, uploaded 10 August 2018]   |  

Abstract

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices. View Full-Text
Keywords: organic transistor; dual-gate; carrier distribution; simulation organic transistor; dual-gate; carrier distribution; simulation
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Shiwaku, R.; Tamura, M.; Matsui, H.; Takeda, Y.; Murase, T.; Tokito, S. Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors. Appl. Sci. 2018, 8, 1341.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Appl. Sci. EISSN 2076-3417 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top