219 Results Found

Flash memories are the preferred choice for data storage in portable gadgets. The charge trapping nonvolatile flash memories are the main contender to replace standard floating gate technology. In this work, we investigate metal/blocking oxide/high-k...

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can...

The instability of transistor characteristics caused by charge trapping under positive bias temperature (PBT) stress in In_0.7Ga_0.3As metal oxide semiconductor field-effect transistors (MOSFETs) with single-layer Al₂O₃ and bi-layer Al₂O₃/HfO₂ gate sta...

With the improvement of integration levels to several nanometers or less, semiconductor leakage current has become an important issue, and oxide-based semiconductors, which have replaced Si-based channel layer semiconductors, have attracted attention...

Neuromorphic computing, an emerging computational paradigm, aims to overcome the bottlenecks of the traditional von Neumann architecture. Two-dimensional materials serve as ideal platforms for constructing artificial synaptic devices, yet existing de...

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the cor...

The scaled charge trapping (CT) type silicon on insulator (SOI) FinFET flash memories with different blocking layer materials of Al₂O₃ and SiO₂ have successfully been fabricated, and their electrical characteristics including short-channel effect (SC...

The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cel...

To mimic the homeostatic functionality of biological neurons, a split-gate field-effect transistor (S-G FET) with a charge trap layer is proposed within a neuron circuit. By adjusting the number of charges trapped in the Si₃N₄ layer, the threshold vo...

The continuous quest to enhance the output performance of triboelectric nanogenerators (TENGs) based on the surface charge density of the tribolayer has motivated researchers to harvest mechanical energy efficiently. Most of the previous work focused...

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials...

An engineering approach was applied to modify the core layers of charge-trapping flash (CTF) memory—the blocking layer, charge-trapping layer, and tunneling layer. The doping of Ti in the charge-trapping layer and the use of Si-doped HfO₂ for t...

In this study, the deuterium passivation effect of silicon nitride (Si₃N₄) on data retention characteristics is investigated in a Metal-Nitride-Oxide-Silicon (MNOS) memory device. To focus on trap passivation in Si₃N₄ as a charge trapping layer, deut...

In this work, floating-gate organic field-effect transistor memory using the n-type semiconductor poly-{[N,N′-bis(2-octyldodecyl) naphthalene-1,4,5,8-bis (dicarbo- ximide)-2,6-dili]-alt-5,5′-(2,2′-bithiophene)} (N2200) as a charge-t...

We aimed to fabricate reliable memory devices using HfO₂, which is gaining attention as a charge-trapping layer material for next-generation NAND flash memory. To this end, a new atomic layer deposition process using sequential remote plasma (RP) and...

We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel lay...

Charge-trapping memory (CTM) is a viable contender to supersede the floating gate technology in high-density flash memory applications. To this end, very reliable charge storage in CTM should be secured. This requires optimization of trap density, th...

Currently, titanium dioxide films are widely used as the electron transport layer material in perovskite solar cells. An alternative to titanium dioxide for this role could be niobium pentoxide (Nb₂O₅), an n-type conducting semiconductor oxide. Howev...

The effects of charge carrier trapping on image resolution in multilayer photoconductive imaging detectors was analyzed by developing an analytical model for calculating the modulation transfer function (MTF) of the imaging detectors. The MTF model w...

Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-sca...

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N₂ plasma treated on the silicon nitride is propos...

A cable accessory is a critical component in constructing high-voltage direct current (HVDC) power grids, and it is typically composed of multiple materials. Due to the discontinuity of the insulation medium, it is prone to failure. This study focuse...

To improve space charge properties and the breakdown strength of insulation pressboard, nano-modifications with nano-montmorillonite fillers are developed using nanocomposite techniques in this study. Employing trap theory, charge carrier trapping ch...

This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. The transistor e...

This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on...

We have simulated a monolithic three-dimensional inverter (M3DINV) structure by considering the interfacial trap charges generated thermally during the monolithic three-dimensional integration process. We extracted the SPICE model parameters from M3D...

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices...

Substrate voltage (V_SUB) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. The 2DEG conductivity and buffer stack charge redistribution can be...

The interface between the semiconductor and the dielectric layer plays a crucial role in organic field-effect transistors (OFETs) because it is at the interface that charge carriers are accumulated and transported. In this study, four zwitterionic be...

The Xihu sag has two main oil−gas fields: Huagang Gas Field and Pinghu Oil Field. The Huagang formation is the reservoir of the Huagang Gas Field in the Central Tectonic Zone, while the Pinghu formation is the reservoir of the Pinghu Oil Field...

Space charge characteristics of cross-linked polyethylene (XLPE) at elevated temperatures have been evidently improved by the graft modifications with ultraviolet (UV) initiation technique, which can be efficiently utilized in industrial cable manufa...

In this study, structural optimization and trap effect analysis of a 4H-SiC–based p–i–n betavoltaic (BV) cell were performed using Silvaco ATLAS TCAD (version 5.30.0.R) simulations combined with an electron-beam (e-beam) irradiation...

A memristor is a new generation memory that merges dynamic random access memory and flash properties. In addition, it can be used in neuromorphic electronics. The advantage of silicon oxynitride, as an active memristor layer, over other dielectrics i...

In this paper, different physical models of single trap defects are considered, which are localized in the oxide layer or at the oxide–semiconductor interface of field effect transistors. The influence of these defects with different sizes and...

The instability in threshold voltage (V_TH) and charge distributions in noncircular cells of three-dimensional (3D) NAND flash memory are investigated. Using TCAD simulation, we aim to identify the main factors influencing the V_TH of noncircular cells...

Atomic layer deposited AlGaN with different AlN and GaN pulse ratios (2:1, 1:1, and 1:2) was used to prepare AlGaN/GaN Schottky diodes, and their current transport mechanisms were investigated using current–voltage (I–V) and capacitance&n...

We investigated the origin of vertical leakage and breakdown in GaN-on-Si epitaxial structures. In order to understand the role of the nucleation layer, AlGaN buffer, and C-doped GaN, we designed a sequential growth experiment. Specifically, we analy...

This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as th...

In order to improve electrical matching between ethylene-propylene-diene misch-polymere (EPDM) reinforce insulation and crosslinked polyethylene (XLPE) main insulation in direct current (DC) cable accessories, the glyceryl monooleate (GMO) organic co...

The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors that led to the successful commercialization of a-Se-based direct conversion flat panel X-ray imagers (FPXIs) an...

In this work, a study on a semi-floating-gate synaptic transistor (SFGST) is performed to verify its feasibility in the more energy-efficient hardware-driven neuromorphic system. To realize short- and long-term potentiation (STP/LTP) in the SFGST, a...

To enhance the direct current (DC) dielectric properties of cross-linked polyethylene (XLPE) for high-voltage (HV) cable insulation, the polyethylene molecular chain is modified by grafting bismaleimide ethane (BMIE), which creates carrier deep traps...

Organic photovoltaics (OPVs) differ from their inorganic counterparts because of inevitable electronic disorders and structural heterogeneity. Charge carrier traps are inevitable in organic semiconductors. A common failure mechanism of OPVs is the de...

The radiation response of Al₂O₃ on silicon substrate under gamma-rays is studied in this article. The atomic layer deposited Al₂O₃ based metal-oxide-semiconductor structures were irradiated under gamma-ray with the total dose of 1.2 Mrad(Si)/2.5 Mrad...

A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state. The reliability of GaN HEMT power devices affects the safe operation of the entire power ele...

In the design and manufacturing of epoxy resin insulation components, complex structures can be achieved through multiple pours, thereby forming the structure of interface of laminated epoxy resin. This type of interface structure is often considered...

This paper investigates the degradation of 28 nm technology NMOS devices under high-temperature and high-field conditions following heavy-ion irradiation. The effects of stress time, stress magnitude, temperature, device structural dimensions, and he...

Epoxy resin is extensively used in gas insulated switches as a renewable energy coating due to its exceptional insulation, mechanical characteristics, and environmental friendliness. The higher resistivity of the epoxy resin causes numerous surface c...

This study analyzed the low-frequency noise characteristics of nanosheet field-effect transistors (NSFETs) using technology computer-aided design (TCAD) simulations. In particular, the effects of shallow trench isolation (STI) depth and gate–in...

Hysteresis in perovskite solar cells is a notorious issue limiting its development in stability, reproducibility and efficiency. Ions’ migration coupled with charges’ recombination are indispensable factors to generate the hysteretic curv...