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Micromachines
Volume 16
Issue 11
10.3390/mi16111216
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation

by
Yanrong Cao
1,2,*,
Zhixian Zhang
1,2,
Longtao Zhang
1,2,
Miaofen Li
1,2,
Shuo Su
1,2,
Weiwei Zhang
1,2,
Youli Xu
1,2,
Dingqi Huang
1,2,
Le Liu
1,2,
Ling Lv
2 and
Xiaohua Ma
2
1
School of Electronics & Mechanical Engineering, Xidian University, Xi’an 710071, China
2
State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China
*
Author to whom correspondence should be addressed.
Micromachines 2025, 16(11), 1216; https://doi.org/10.3390/mi16111216 (registering DOI)
Submission received: 20 September 2025 / Revised: 22 October 2025 / Accepted: 24 October 2025 / Published: 25 October 2025
(This article belongs to the Special Issue Advanced Nano-Semiconductor Devices: Design, Modeling and Next-Generation AI Applications)
Versions Notes

Abstract

This paper investigates the degradation of 28 nm technology NMOS devices under high-temperature and high-field conditions following heavy-ion irradiation. The effects of stress time, stress magnitude, temperature, device structural dimensions, and heavy-ion radiation fluence on device degradation were analyzed. The results indicate that under positive gate bias stress, the threshold voltage of NMOS devices exhibits a continuous positive shift. Increased stress time, higher stress magnitude, elevated temperature, and reduced device structural dimensions all aggravate device degradation. The combined effects of electrical stress and radiation lead to a degradation that initially decreases and then increases. This is because the trap charges generated in the gate oxide layer by radiation are positive charges at low fluence, compensating for the negative charges generated under electrical stress, thereby reducing degradation. However, at high fluence, the negative interface trap charges increase, while radiation also generates positive charges in the shallow trench isolation (STI) region. These two factors collectively contribute to increased device degradation.
Keywords: heavy ion irradiation; high-temperature; high-field; degradation heavy ion irradiation; high-temperature; high-field; degradation

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MDPI and ACS Style

Cao, Y.; Zhang, Z.; Zhang, L.; Li, M.; Su, S.; Zhang, W.; Xu, Y.; Huang, D.; Liu, L.; Lv, L.; et al. Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines 2025, 16, 1216. https://doi.org/10.3390/mi16111216

AMA Style

Cao Y, Zhang Z, Zhang L, Li M, Su S, Zhang W, Xu Y, Huang D, Liu L, Lv L, et al. Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines. 2025; 16(11):1216. https://doi.org/10.3390/mi16111216

Chicago/Turabian Style

Cao, Yanrong, Zhixian Zhang, Longtao Zhang, Miaofen Li, Shuo Su, Weiwei Zhang, Youli Xu, Dingqi Huang, Le Liu, Ling Lv, and et al. 2025. "Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation" Micromachines 16, no. 11: 1216. https://doi.org/10.3390/mi16111216

APA Style

Cao, Y., Zhang, Z., Zhang, L., Li, M., Su, S., Zhang, W., Xu, Y., Huang, D., Liu, L., Lv, L., & Ma, X. (2025). Investigation on High-Temperature and High-Field Reliability of NMOS Devices Fabricated Using 28 nm Technology After Heavy-Ion Irradiation. Micromachines, 16(11), 1216. https://doi.org/10.3390/mi16111216

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