Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation
Abstract
:1. Introduction
2. Sample Preparation and Characterization
3. Experiment and Results
3.1. Crystallization Structure of Al2O3 Film before and after Irradiation
3.2. Chemical Structure and Band Alignment of Al2O3/Si Structure before and after Irradiation
3.2.1. Chemical Structure of the Al2O3/Si Structure before and after Irradiation
3.2.2. Band Alignment of Al2O3/Si Structure under Radiation
3.3. Radiation Induced Charge Trapping and Transportation in Al2O3 Based MOS Structures
4. Discussion
5. Conclusions
- (1)
- The radiation induced oxide and interface trapped charges are positive in the order of 1011 cm−2–1012 cm−2 in 14.1 nm Al2O3 and 1011 cm−2 in 4.5 nm Al2O3, which increase with the radiation total dose.
- (2)
- The radiation induced defects are oxygen vacancies in Al2O3 bulk and O dangling bonds and Al-Si metallic bonds on Al2O3/Si interface, which increase with the increase of total dose. The effective trapping efficiencies in Al2O3 film are in the range of 7% to 20% under each total dose of gamma-ray irradiation.
- (3)
- The physical structure of Al2O3 shows no obvious change after radiation, and the leakage current through Al2O3 film also changes little after radiation which is in accordance with the physical characteristic.
Funding
Data Availability Statement
Conflicts of Interest
References
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Total Dose | 14.1 nm Al2O3 (Surface) | 14.1 nm Al2O3 (Interface) | 4.5 nm Al2O3 |
---|---|---|---|
Pre- | 0.718 | 0.66 | 0.656 |
1.2Mrad | 0.725 | 0.61 | 0.657 |
2.5Mrad | 0.739 | 0.61 | 0.661 |
4Mrad | 0.754 | 0.56 | 0.661 |
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Ding, M. Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation. Micromachines 2021, 12, 661. https://doi.org/10.3390/mi12060661
Ding M. Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation. Micromachines. 2021; 12(6):661. https://doi.org/10.3390/mi12060661
Chicago/Turabian StyleDing, Man. 2021. "Damage Effect of ALD-Al2O3 Based Metal-Oxide-Semiconductor Structures under Gamma-Ray Irradiation" Micromachines 12, no. 6: 661. https://doi.org/10.3390/mi12060661