Next Article in Journal
Structural Rheology of the Smectic Phase
Next Article in Special Issue
Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement
Previous Article in Journal
Validation of the Anhysteretic Magnetization Model for Soft Magnetic Materials with Perpendicular Anisotropy
Previous Article in Special Issue
Characterization of High-k Nanolayers by Grazing Incidence X-ray Spectrometry
Article Menu

Export Article

Open AccessReview
Materials 2014, 7(7), 5117-5145;

Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm

Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, UK
Department of Electrical and Electronic Engineering, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
Department of Materials Science and Engineering, University of Liverpool, Liverpool L69 3GH, UK
Author to whom correspondence should be addressed.
Received: 15 January 2014 / Revised: 2 July 2014 / Accepted: 3 July 2014 / Published: 15 July 2014
(This article belongs to the Special Issue High-k Materials and Devices 2014)
Full-Text   |   PDF [2011 KB, uploaded 15 July 2014]   |  


Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scaling cell size and increasing integration are that they enable lower manufacturing cost as well as higher performance. Charge trapping memory is regarded as one of the most promising flash memory technologies as further down-scaling continues. In addition, more and more exploration is investigated with high-k dielectrics implemented in the charge trapping memory. The paper reviews the advanced research status concerning charge trapping memory with high-k dielectrics for the performance improvement. Application of high-k dielectric as charge trapping layer, blocking layer, and tunneling layer is comprehensively discussed accordingly. View Full-Text
Keywords: non-volatile memory; flash; high-k dielectrics; charge trapping memory non-volatile memory; flash; high-k dielectrics; charge trapping memory

Figure 1

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Zhao, C.; Zhao, C.Z.; Taylor, S.; Chalker, P.R. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm. Materials 2014, 7, 5117-5145.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top