Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (...
Monolithically integrated, active photonic devices on Si are key components in Si-based large-scale electronic-photonic integration for future generations of high-performance, low-power computation and communication systems. Ge has become an interest...
In the article the authors discuss light detection and ranging (LiDAR) for automotive applications and the potential roles Si photonics can play in practice. The authors review published research work on Si photonics optical phased array (OPA) and ot...
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavel...
Various crystalline silicon carbide (SiC) polytypes are emerging as promising photonic materials due to their wide bandgap energies and nonlinear optical properties. However, their wafer forms cannot readily provide a refractive index contrast for op...
SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, na...
As a leading provider of sensing solutions ams AG is developing semiconductor sensors in a wide variety of fields. One of the key competences of ams AG lies in optical sensing. To widen the company’s portfolio in this field we have been developing pr...
The magnetic nanomaterial Mn3Si2Te6 is a promising option for spin-dependent electronic and magneto-optoelectronic devices. However, its application in nonlinear optics remains fanciful. Here, we demonstrate a pulsed Er-doped fiber laser (EDFL) based...
With the rapid development of photo-communication technologies, avalanche photodiode (APD) will play an increasingly important role in the future due to its high quantum efficiency, low power consumption, and small size. The monolithic integration of...
The use of integrated heaters is widespread in silicon photonics for waveguide temperature control. The dynamical behavior of the heaters is important for determining their usefulness for certain applications. There exists ambiguity in the literature...
The interaction of Ge(Si)/SOI self-assembled nanoislands with modes of photonic crystal slabs (PCS) with a hexagonal lattice is studied in detail. Appropriate selection of the PCS parameters and conditions for collecting the photoluminescence (PL) si...
A portable and sensitive time-resolved biosensor for capturing very low intensity light emission is a promising avenue to study plant delayed fluorescence. These weak emissions provide insight on plant health and can be useful in plant science as wel...
We propose and demonstrate an efficient grating coupler for integrated SiGe photonic devices. A bottom metal layer is adopted to enhance the coupling efficiency on the wafer backside. A low coupling loss of −1.34 dB and −0.79 dB can be theoretically...
We investigate the potential to adopt waveguide-integrated GeSn single-photon avalanche detectors (SPADs) over a wideband wavelength range from very-near-infrared to telecommunication wavelengths based on an Si-rich SiN waveguide platform via an end-...
Silicon photonics offers a powerful route to leverage existing microelectronics infrastructure to enhance performance and enable new applications in data processing and sensing. Among the available material platforms, silicon nitride (Si3N4) provides...
To enable non-destructive quantitative characterization of constituent content in C/C–SiC ceramic-matrix composites, this study develops a physics-guided framework based on multispectral photon-counting X-ray detection. In practical photon-coun...
We present a design methodology for hybrid lasers to realise mode-hop free operation by controlling the cavity mode spacing. In this study, a compact hybrid photonic crystal laser (H-PhCL) was employed which allowed a reduction of the Fabry–Perot len...
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre...
The design, simulation and experimental results of the integrated optical and electronic components for 25 Gb/s microwave photonic link based on a 0.25 µm SiGe:C BiCMOS technology process are presented. A symmetrical depletion-type Mach-Zehnder...
Analog and digital SiPMs have revolutionized the field of radiation instrumentation by replacing both avalanche photodiodes and photomultiplier tubes in many applications. However, multiple applications require greater performance than the current Si...
Practical implementation of many quantum information and sensing technologies relies on the ability to efficiently generate and manipulate single-photon photons under ambient conditions. Color centers in diamond, such as the silicon-vacancy (SiV) cen...
Silicon photonics is a revolutionary technology in the integrated photonics field which has experienced rapid development over the past several decades. High-quality III-V semiconductor components on Si platforms have shown their great potential to r...
Silicon photomultipliers (SiPMs) have improved significantly over the last years and now are widely employed in many different applications. However, the custom fabrication technologies exploited for commercial SiPMs do not allow the integration of a...
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the...
To test silicon photonics component performances, a silicon (Si) grating coupler (GC) is used to couple the light from a single-mode fiber (SMF) into the chip. However, silicon nitride (Si3N4) waveguides have recently become more popular for realizin...
Near-future upgrades of intra data center networks and high-performance computing systems would require optical interconnects capable of operating at beyond 100 Gbps/lane. In order for this evolution to be achieved in a sustainable way, high-speed ye...
The deployment of Discrete Variable Quantum Key Distribution (DV-QKD) in high-traffic, short-reach environments, such as intra-data center networks, is currently constrained by the saturation of single-photon detectors. While CMOS Single-Photon Avala...
An efficient photodetector (PD) is a key component in silicon-based photonic integrated circuits (PICs). III–V PDs with low dark current density, large bandwidth, and wide operation wavelength range have become increasingly important for Si pho...
The development of the low dislocation density of the Si-based GaAs buffer is considered the key technical route for realizing InAs/GaAs quantum dot lasers for photonic integrated circuits. To prepare the high-quality GaAs layer on the Si substrate,...
Silicon photomultipliers (SiPMs) are arrays of single-photon avalanche diodes (SPADs) connected in parallel. Analog silicon photomultipliers are built in custom technologies optimized for detection efficiency. Digital silicon photomultipliers are bui...
Over the past few decades, on-chip photonic integrated circuits based on silicon photonics (SiPh) platforms have gained widespread attention due to the fact that they offer many advantages, such as high bandwidth, low loss, compact size, low power co...
Silicon photomultipliers (SiPMs) are solid-state single-photon-sensitive detectors that show excellent performance in a wide range of applications. In FBK (Trento, Italy), we developed a position-sensitive SiPM technology, called “linearly grad...
Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent...
A monolithic digital Silicon Photomultiplier (SiPM) featuring 1024 microcells with a 30-micrometer pitch and a 50% fill factor has been designed in a 110-nanometer CMOS image sensor technology. The device under consideration integrates both SPAD sens...
We experimentally measured the femtosecond pulse transmission through a silicon-on-insulator (SOI) nanowire waveguide under different temperatures and input pulse energy with a cross-correlation frequency-resolved optical gating (XFROG) measurement s...
A review of the recent research work on high-power and high-speed (HPHS) Ge-on-Si photodiode design is presented, using Silicon Photonics (SiPh) technology, suitable for Radio-over-Fiber base station schemes. The Photodiode (PD) principle of operatio...
This paper presents a new quenching circuit (QC) and single photon avalanche diode (SPAD) implemented in TSMC CMOS 65 nm technology. The QC was optimized for single photon timing resolution (SPTR) with a view to an implementation in a 3D digital SiPM...
Silicon Photomultipliers (SiPMs) are single photon detectors that gained increasing interest in many applications as an alternative to photomultiplier tubes. In the field of space experiments, where volume, weight and power consumption are a major co...
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including v...
The monolithic integration of III-V semiconductors with silicon (Si) is a critical step toward advancing optoelectronic and photonic devices. In this work, we present GaAs nanoheteroepitaxy (NHE) on Si nanotips using gas-source molecular beam epitaxy...
Photonic crystals (PCs) based on porous anodic materials have been proven to be a potent and versatile instrument for the emergence of new technologies with a wide range of applications. Their lower production costs are one of the key advantages, mak...
High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 µm. Such devices are key components in several applications such...
Photodetectors with broad spectral response and high responsivity demonstrate significant potential in optoelectronic applications. This study proposes a Si/Ge avalanche photodiode featuring nanostructures that enhance light absorption. By optimizing...
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on o...
In this paper, we report on the photon emission of Silicon Photomultipliers (SiPMs) from avalanche pulses generated in dark conditions, with the main objective of better understanding the associated systematics for next-generation, large area, SiPM-b...
Silicon–nitride (SiN) waveguides have emerged as fundamental building blocks in silicon photonic integrated circuits (Si-PICs), offering advantages that compensate for the intrinsic limitations of silicon-on-insulator (SOI) and silica-on-silico...
We grafted thermo-responsive poly(N-isopropylacrylamide) (PNIPAM) brushes from monodisperse SiO2 microspheres through surface-initiated atom transfer radical polymerization (SI ATRP) to generate core-shell structured SiO2@PNIPAM microspheres (SPMs)....
In this article, we report on an optical real-time autocorrelator readout with a 5 Hz refresh rate, equipped with a transimpedance amplified photodetector based on the two-photon absorption (TPA) of semiconductor photodiodes (PDs) for ultrashort (1 &...
To increase the optical interconnect transmission capacity, different multiplexing technologies, including wavelength division multiplexing (WDM), polarization division multiplexing (PolDM) and mode division multiplexing (MDM), can be utilized. Among...
A silicon photomultiplier (SiPM) LiDAR with photon threshold detection can achieve high dynamic performance. However, the number fluctuations of echo signal photons lead to the range walk error (RWE) in SiPM LIDARs. This paper derives the RWE model o...
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