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Proceedings 2017, 1(4), 559;

Integrated SiGe Detectors for Si Photonic Sensor Platforms

Else Kooi Laboratory, TU Delft, Feldmannweg 17, 2628 CT, Delft, The Netherlands
Qutech, TU Delft, Van der Waalsweg 122, 2628, Delft, The Netherlands
VTT Technical Research Center of Finland, P.O. Box 1000, FI-02044 VTT, Finland, Espoo, Finland
Electronic Components Technology and Materials, TU Delft, Mekelweg 4, 2628 CD, Delft, The Netherlands
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
Author to whom correspondence should be addressed.
Published: 11 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
PDF [1014 KB, uploaded 12 October 2017]


In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
Keywords: Si photonics; SiGe detectors; optical coherence tomography Si photonics; SiGe detectors; optical coherence tomography
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Pandraud, G.; Milosavljevic, S.; Sammak, A.; Cherchi, M.; Jovic, A.; Sarro, P. Integrated SiGe Detectors for Si Photonic Sensor Platforms. Proceedings 2017, 1, 559.

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