Integrated SiGe Detectors for Si Photonic Sensor Platforms†
AbstractIn this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
Share & Cite This Article
Pandraud, G.; Milosavljevic, S.; Sammak, A.; Cherchi, M.; Jovic, A.; Sarro, P. Integrated SiGe Detectors for Si Photonic Sensor Platforms. Proceedings 2017, 1, 559.
Pandraud G, Milosavljevic S, Sammak A, Cherchi M, Jovic A, Sarro P. Integrated SiGe Detectors for Si Photonic Sensor Platforms. Proceedings. 2017; 1(4):559.Chicago/Turabian Style
Pandraud, Grégory; Milosavljevic, Silvana; Sammak, Amir; Cherchi, Matteo; Jovic, Aleksandar; Sarro, Pasqualina. 2017. "Integrated SiGe Detectors for Si Photonic Sensor Platforms." Proceedings 1, no. 4: 559.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.