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Advances in Single Photon Detectors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: 31 October 2026 | Viewed by 1913

Special Issue Editors

1. Microelectronics Thrust, Function Hub, The Hong Kong University of Science and Technology (Guangzhou), Guangzhou 511453, China
2. Department of Electrical and Computer Engineering, McMaster University, Hamilton, ON L8S 4K1, Canada
Interests: high-speed single avalanche photodiodes (SPADs); high-performance CMOS time-to-digital converters and their applications for biomedical imaging

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Guest Editor

Special Issue Information

Dear Colleagues,

Recent advances in single-photon detection technologies have led to breakthroughs across quantum computing, medical diagnostics, and next-generation optical systems. CMOS-integrated single-photon avalanche diodes (SPADs) are particularly transformative, combining a nanosecond-scale resolution with scalable semiconductor manufacturing. This integration enables full system-on-chip implementations that pair photon detection with advanced signal processing circuits, enhancing their commercial viability.

The scope of this Special Issue includes, but is not limited to, the following topics:

A. Core Technological Developments

  • Device Optimization: Novel SPAD architectures achieving >40% photon detection efficiency at 905nm wavelengths; multi-layer 3D integration techniques reducing dark count rates to extremely low levels; and advanced quenching circuit designs enabling GHz-scale counting rates.
  • System Integration Challenges: Reducing crosstalk using isolation technologies or optical shielding; reducing timing jitter using high-performance TDC architectures with ~ps resolution; and scalability using wafer-level bonding for large arrays.

B. Emerging Applications

  • Quantum Technologies: Quantum key distribution networks using SPAD arrays and entangled photon detection for quantum repeaters.
  • Medical Imaging Frontiers: FLIM systems achieving excellent timing resolution for cancer margin detection; silicon photomultipliers enabling compact PET scanner designs; and other imaging modalities such as diffuse optical imaging and Raman spectroscopy.
  • Photonics-Driven Sensing: LiDAR systems with excellent distance ranging capabilities using VCSEL-SPAD pairs, and underwater optical communications at high data rates.

This Special Issue seeks contributions that address critical gaps related to noise suppression techniques, multi-spectral detection arrays, and hybrid quantum–classical detection systems. We particularly welcome the submission of articles that present field-deployable prototypes with performance benchmarks.

Dr. Wei Jiang
Prof. Dr. M. Jamal Deen
Guest Editors

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Keywords

  • single-photon avalanche diode (SPAD)
  • quantum sensing
  • medical imaging
  • time-correlated single photon counting (TCSPC)
  • LiDAR
  • FLIM
  • quantum key distribution (QKD)
  • optical wireless communication, etc.

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Published Papers (2 papers)

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Research

14 pages, 3285 KB  
Article
Design and Simulation of Broadband SiN Waveguide-Integrated GeSn Single-Photon Avalanche Detectors at Very-Near-Infrared to Telecommunication Wavelengths
by Pawaphat Jaturaphagorn, Nattaporn Chattham, Apichart Pattanaporkratana and Papichaya Chaisakul
Sensors 2026, 26(8), 2404; https://doi.org/10.3390/s26082404 - 14 Apr 2026
Viewed by 388
Abstract
We investigate the potential to adopt waveguide-integrated GeSn single-photon avalanche detectors (SPADs) over a wideband wavelength range from very-near-infrared to telecommunication wavelengths based on an Si-rich SiN waveguide platform via an end-fire coupling approach. Electrical properties of GeSn SPAD heterodiodes are investigated, including [...] Read more.
We investigate the potential to adopt waveguide-integrated GeSn single-photon avalanche detectors (SPADs) over a wideband wavelength range from very-near-infrared to telecommunication wavelengths based on an Si-rich SiN waveguide platform via an end-fire coupling approach. Electrical properties of GeSn SPAD heterodiodes are investigated, including their I–V characteristics, electric field distribution, charge sheet doping variation, avalanche triggering probabilities, dark count rate, and afterpulsing probability, to identify the appropriate critical parameters and to reliably benchmark against previous related simulation works. Notably, to enable a waveguide-integrated GeSn SPAD for the entire wavelength of interest, this paper finds that, among several potentially important parameters, the coupling efficiency between the input waveguide and the GeSn SPAD plays a very critical role in determining the single-photon detection efficiency (SPDE) performance, and a suitable GeSn absorber thickness should be carefully considered according to the chosen Sn content. Interestingly, although the coupling efficiency and SPDE are significantly varied between the longer wavelengths of 1310 and 1550 nm and the shorter wavelengths of 700 and 900 nm, an acceptable SPDE performance can be maintained for all wavelengths of interest for both close end-fire coupling (no gap between the amorphous Si-rich SiN waveguide and the GeSn SPAD) and a 50 nm gap assumption for simpler fabrication. Full article
(This article belongs to the Special Issue Advances in Single Photon Detectors)
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13 pages, 3283 KB  
Article
Comprehensive Comparison of Front- and Back-Illuminated Single-Photon Avalanche Diodes in 110 nm Standard CMOS Image Sensor Technology
by Doyoon Eom, Won-Yong Ha, Eunsung Park, Jung-Hoon Chun, Jaehyuk Choi, Woo-Young Choi and Myung-Jae Lee
Sensors 2026, 26(5), 1664; https://doi.org/10.3390/s26051664 - 6 Mar 2026
Viewed by 895
Abstract
This paper presents a process-controlled study of illumination engineering in single-photon avalanche diodes (SPADs) fabricated in a 110 nm standard CMOS image sensor (CIS) technology. Front-illuminated (FI) and back-illuminated (BI) SPADs were implemented with identical front-end-of-line (FEOL) structures, including the junction and guard-ring [...] Read more.
This paper presents a process-controlled study of illumination engineering in single-photon avalanche diodes (SPADs) fabricated in a 110 nm standard CMOS image sensor (CIS) technology. Front-illuminated (FI) and back-illuminated (BI) SPADs were implemented with identical front-end-of-line (FEOL) structures, including the junction and guard-ring configurations, enabling the isolation of the effects of illumination direction and back-end-of-line (BEOL) configuration without modifying the junction structure. Through TCAD simulations and comprehensive experimental characterizations, including current–voltage, light-emission, dark count rate (DCR), photon detection probability (PDP), and timing-jitter measurements, we systematically analyze the performance trade-offs introduced by the BI configuration. The BI SPAD exhibits enhanced near-infrared PDP and a broader spectral response due to its deeper absorption region and the incorporation of a metal reflector, while maintaining identical avalanche characteristics, as evidenced by an unchanged 72 ps full-width-at-half-maximum (FWHM) timing jitter. However, the backside illumination increases the diffusion tail, indicating a trade-off between near-infrared sensitivity and diffusion-related timing performance. These results provide design guidelines for optimizing SPAD performance through illumination-direction and BEOL engineering while preserving the FEOL design and demonstrate a useful approach for SPAD integration in standard CMOS technology. Full article
(This article belongs to the Special Issue Advances in Single Photon Detectors)
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