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Advanced Silicon Photomultiplier Based Sensors
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Advanced Silicon Photomultiplier Based Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Electronic Sensors".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 1952

Special Issue Editor

Dr. Fabio Acerbi

E-Mail Website
Guest Editor
Sensor and Devices Center, Fondazione Bruno Kessler (FBK), I-38123 Trento, Italy
Interests: single-photon detection; photodetectors; analog design; front-end electronics; quantum random-number generation; integrated photonics

Special Issue Information

Dear Colleagues,

Silicon photomultipliers (SiPMs) are solid-state, single-photon, sensitive photodetectors made by many single-photon avalanche diodes. In the last decade, there has been a tremendous and growing interest in their use for several types of applications, including medical imaging, high-energy physics experiments, biology, photonics, and industrial or automotive applications (e.g., in light detection and autonomous driving). This is due to their unique features such as compactness, low-bias voltage, good time resolution, and dynamic range. They are also highly versatile and can be adapted depending on the specific application; peak efficiency wavelength, gain, and time response are a few examples of parameters that can be optimized.

This Special Issue aims to provide an overview of the recent developments in the field of analog and digital silicon photomultipliers, as well as single-photon avalanche diodes and solid-state photomultiplier (SSPM) technologies. We will also explore novel applications based on such innovative SiPMs to understand the novel challenges and innovative solutions needed for such different applications.

Dr. Fabio Acerbi
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • SiPM
  • silicon photomultiplier
  • single-photon
  • avalanche photodiode
  • solid-state photomultiplier
  • detection efficiency
  • radiation
  • scintillation
  • Cherenkov

Published Papers (3 papers)

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Research

12 pages, 3465 KiB  
Article
Determination of Self-Heating in Silicon Photomultipliers
by Erika Garutti, Stephan Martens, Joern Schwandt and Carmen Villalba-Pedro
Sensors 2024, 24(9), 2687; https://doi.org/10.3390/s24092687 - 24 Apr 2024
Viewed by 236
Abstract
The main consequence of radiation damage on a silicon photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which alters its performance parameters. To investigate this heating [...] Read more.
The main consequence of radiation damage on a silicon photomultiplier (SiPM) is a significant increase in the dark current. If the SiPM is not adequately cooled, the power dissipation causes it to heat up, which alters its performance parameters. To investigate this heating effect, a measurement cycle was developed and performed with a KETEK SiPM glued to an Al2O3 substrate and with HPK SiPMs glued to either an Al2O3 substrate or a flexible PCB. The assemblies were connected either directly to a temperature-controlled chuck on a probe station, or through layers of materials with defined thermal resistance. An LED operated in DC mode was used to illuminate the SiPM and to tune the power dissipated in a measurement cycle. The SiPM current was used to determine the steady-state temperature reached by the SiPM via a calibration curve. The increase in SiPM temperature due to self-heating is analyzed as a function of the power dissipation in the SiPM and the thermal resistance. This information can be used to adjust the operating voltage of the SiPMs, taking into account the effects of self-heating. Similarly, this approach can be applied to investigate the unknown thermal contact of packaged SiPMs. Full article
(This article belongs to the Special Issue Advanced Silicon Photomultiplier Based Sensors)
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12 pages, 1518 KiB  
Article
Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection
by Diego Real, David Calvo, Juan de Dios Zornoza, Mario Manzaneda, Rebecca Gozzini, Carlos Ricolfe-Viala, Rafael Lajara and Francisco Albiol
Sensors 2024, 24(7), 2084; https://doi.org/10.3390/s24072084 - 25 Mar 2024
Viewed by 372
Abstract
Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address [...] Read more.
Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented. Full article
(This article belongs to the Special Issue Advanced Silicon Photomultiplier Based Sensors)
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10 pages, 664 KiB  
Article
Correcting the Non-Linear Response of Silicon Photomultipliers
by Lukas Brinkmann, Erika Garutti, Stephan Martens and Joern Schwandt
Sensors 2024, 24(5), 1671; https://doi.org/10.3390/s24051671 - 05 Mar 2024
Cited by 1 | Viewed by 810
Abstract
The finite number of pixels in a silicon photomultiplier (SiPM) limits its dynamic range to light pulses up to typically 80% of the total number of pixels in a device. Correcting the non-linear response is essential to extend the SiPM’s dynamic range. One [...] Read more.
The finite number of pixels in a silicon photomultiplier (SiPM) limits its dynamic range to light pulses up to typically 80% of the total number of pixels in a device. Correcting the non-linear response is essential to extend the SiPM’s dynamic range. One challenge in determining the non-linear response correction is providing a reference linear light source. Instead, the single-step method used to calibrate PMTs is applied, based on the difference in responses to two light sources. With this method, the response of an HPK SiPM (S14160-1315PS) is corrected to linearity within 5% while extending the linear dynamic range by a factor larger than ten. The study shows that the response function does not vary by more than 5% for a variation in the operating voltage between 2 and 5 V overvoltage in the gate length between 20 and 100 ns and for a time delay between the primary and secondary light of up to 40 ns. Full article
(This article belongs to the Special Issue Advanced Silicon Photomultiplier Based Sensors)
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