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Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Ge-Photodetectors for Si-Based Optoelectronic Integration

Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 Singapore, Singapore
Author to whom correspondence should be addressed.
Sensors 2011, 11(1), 696-718;
Received: 5 November 2010 / Revised: 29 November 2010 / Accepted: 10 January 2011 / Published: 12 January 2011
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 µm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends. View Full-Text
Keywords: germanium; photodetector; Si photonics germanium; photodetector; Si photonics
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MDPI and ACS Style

Wang, J.; Lee, S. Ge-Photodetectors for Si-Based Optoelectronic Integration. Sensors 2011, 11, 696-718.

AMA Style

Wang J, Lee S. Ge-Photodetectors for Si-Based Optoelectronic Integration. Sensors. 2011; 11(1):696-718.

Chicago/Turabian Style

Wang, Jian, and Sungjoo Lee. 2011. "Ge-Photodetectors for Si-Based Optoelectronic Integration" Sensors 11, no. 1: 696-718.

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