- Article
A Novel Scheme for Full Bottom Dielectric Isolation in Stacked Si Nanosheet Gate-All-Around Transistors
- Jingwen Yang,
- Ziqiang Huang,
- Dawei Wang,
- Tao Liu,
- Xin Sun,
- Lewen Qian,
- Zhecheng Pan,
- Saisheng Xu,
- Chen Wang and
- David Wei Zhang
- + 2 authors
In this paper, a novel scheme for source/drain-first (S/D-first) full bottom dielectric isolation (BDI), i.e., Full BDI_Last, with integration of a sacrificial Si0.5Ge0.5 layer was proposed and demonstrated in a stacked Si nanosheet gate-all-around (...