Wide-bandgap technology evolution compels the advancement of efficient pulse-width gate-driver devices. Integrated enhanced gate-driver planar transformers are a source of electromagnetic disturbances due to inter-winding capacitances, which serve as...
Recent Modular Multilevel Converter (MMC) topology allows for drastic improvements in power electronic conversion such as higher energy quality, lower power semiconductors electrical stress, decreased Electro-Magnetic Interferences (EMI), and reduced...
Silicon carbide (SiC) MOSFETs are promising for high-efficiency, high-power-density power conversion owing to their high breakdown capability, fast switching speeds, and low switching losses. However, parasitic parameters can cause severe voltage/cur...
This work explores the principle of utilizing gallium nitride devices as a gate driver for silicon carbide power devices. As silicon has long reached its performance limits, Wide Bandgap semiconductors such as gallium nitride and silicon carbide have...
Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are widely used in high-frequency applications owing to their fast-switching speed and low switching loss. However, the large dVDS/dt transients can cause severe crosstalk, current oversho...
This paper presents basic properties and laboratory tests of a commercial integrated high-frequency MOSFET gate driver IXRFD631 operating in the frequency range up to 30 MHz. The MOSFET driver has been tested for two operating states: in the idle sta...
According to the International Electrotechnical Commission, medium voltage ranges from 1 kV to 36 kV. In this voltage range, the field of power electronics has been focusing on developing power converters with high efficiency. Converters for such app...
The eGaN HEMT power devices face serious crosstalk problems when applied to high-frequency bridge circuits, thereby limiting the switching performance of these devices. To address this issue, a gate driver is proposed in this paper that can suppress...
High-power IGBTs are used in power electronic converters in a variety of applications: traction drives, renewable power converters, mining equipment, oil and water pumping, and so on. To control a transistor, a special gate driver board is required....
A SiC MOSFET is a suitable replacement for a Si MOSFET due to its lower on-state resistance, faster switching speed, and higher breakdown voltage. However, due to the parasitic parameters and the low damping in the circuit, the turn-on overcurrent an...
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, a...
This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are...
The increase of the switching speed in power semiconductors leads to converters with better efficiency and high power density. On the other hand, fast switching generates some consequences like overshoots and higher switching transient, which provoke...
Many advanced technologies have been employed in high-performance active matrix displays, including liquid crystal displays, organic light-emitting diode displays, and micro-light-emitting diode displays. On the other side, there exists a strong dema...
This paper presents an adaptive dead-time control circuit for a maximum work frequency 20 MHz, maximum voltage level 90 V GaN gate driver. The dead-time is set to prevent straight-through of the upper and lower power transistors of the bridge arm str...
This article presents a gate driver circuit with all-magnetic isolation for driving silicon carbide (SiC) power devices in a three-level T-type bridge-leg. Gate driver circuitry for SiC devices has to be tolerant of rapid common-mode voltage changes....
The imperative for EMC-optimized gate drivers in Gallium Nitride (GaN)-based automotive DC-DC converters stems from the stringent CISPR 25 standards and GaN’s intrinsic high-speed switching characteristics, which paradoxically exacerbate electr...
DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide...
An ultra-low quiescent current under-voltage lockout (UVLO) circuit for a high-voltage gate driver integrated circuit (HVIC) is described for application in portable devices. The UVLO circuit consumes the static current in the high-side circuitry and...
This article presents the concept of switching and conduction loss reduction in a T-NPC inverter based on IGBT transistors. The method of limiting switching losses involves the connection of an LC circuit designed to cause transistors in vertical bra...
This paper proposes an Active Gate Driver (AGD) for a DC–DC boost converter based on Silicon Carbide (SiC) power devices, in which surge voltage and ringing arise from their fast-switching characteristics. In this work, a practical and simple 4...
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of...
Flat panel displays are electronic displays that are thin and lightweight, making them ideal for use in a wide range of applications, from televisions and computer monitors to mobile devices and digital signage. The Thin-Film Transistor (TFT) layer i...
This paper addresses the trade-off between electromagnetic interference (EMI) and common-mode transient immunity (CMTI) performance in capacitively isolated gate drivers for high-frequency silicon carbide (SiC) applications. Starting from the fundame...
Owing to the stringent reliability requirements of silicon carbide (SiC) MOSFETs, conventional gate-driving methods with fixed parameters are no longer sufficient to ensure reliable operation under varying operating conditions. To address this issue,...
High switching-speed Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET) has serious crosstalk issues. During the turn-ON transition and turn-OFF transition of the active switch in a phase-leg configuration, the voltage dro...
Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circu...
Fast switching within static converters is a key to high-efficiency operation and a source of electromagnetic disturbances that can harm the proper functioning of the converters themselves or the electronic equipment placed in their neighborhood. To...
This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semicon...
The demand for highly efficient and dynamic electric vehicles (EVs) has increased dramatically. The traction inverter, a pivotal component in an EV powertrain, plays a crucial role. This study is dedicated to designing a traction inverter with focus...
An enhancement-mode gallium-nitride high-electron-mobility transistor (E-mode GaN HEMT) operated at high frequency is highly prone to current spikes (di/dt) and voltage spikes (dv/dt) in the parasitic inductor of its circuit, resulting in damage to t...
This paper proposes an analog retuning strategy that strengthens the functional longevity of photovoltaic (PV) systems operating within circular-economy environments. Although PV modules can be relocated from large generation sites to low-demand rura...
Reliable motor control is important for electric vehicle applications. The control process requires accurate measurements of the current and rotor position information to establish correct motor control design, particularly in sensorless permanent ma...
In floating gate compute-in-memory (CIM) chips, due to the gate equivalent capacitance of the large-scale array and the parasitic capacitance of the long-distance transmission wire, it is difficult to balance the switching speed and area of the word...
Gate driver-on-array (GOA) circuits employing amorphous indium–gallium–zinc oxide (IGZO)-based thin-film transistors (TFTs) have been successfully utilized to generate the driving signals for the commercialization of active-matrix organic...
New semiconductor technology is enabling the design of more reliable and high-performance power converters. In particular, wide bandgap (WBG) silicon carbide (SiC) and gallium nitride (GaN) technologies provide faster switching times, higher operatin...
This paper comprehensively reviews several techniques that address the static and dynamic voltage balancing of series-connected MOSFETs. The effectiveness of these techniques was validated through simulations and experiments. Dynamic voltage-balancin...
The rapid growth of electromobility and the increasing deployment of EV chargers emphasize the importance of pulse rectifiers with built-in power factor correction (PFC) filters. The new switching power devices offer higher converter switching freque...
High voltage (HV) generators are used in multiple industrial and scientific facilities. Recent publications have demonstrated that triggering industrial thyristors (relatively slow switching devices) in overvoltage mode, also called impact ionization...
While operating an electric drive under different load conditions, power switch devices experience thermal stress which provokes wear-out failures and compromises lifetime. In this paper, a model-based dynamic gate voltage control strategy is propose...
Various methods have been discussed in the literature regarding enabling the over-current (OC) capability of silicon carbide (SiC) MOSFETs. SiC MOSFETs can operate at up to 250 °C without failure. One of their features is to permit transient oper...
In power converters with high switching frequency, drive losses constitute a significant portion of the overall power losses. Resonant gate drivers can reduce drive losses, thereby enhancing the efficiency. However, resonant drivers suffer certain ch...
Road traffic accidents have been listed in the top 10 global causes of death for many decades. Traditional measures such as education and legislation have contributed to limited improvements in terms of reducing accidents due to people driving in und...
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns. This is because of the possibility of the gate to source voltage of the GaN HEMT surg...
This paper presents a high-frequency (HF) magnetic pulse generator designed for low-intensity transcranial magnetic stimulation (LI-TMS) applications. HF pulse stimulation can induce a strong electric field with minimal current and enhance the penetr...
In power converters, the fast switching of the power conversion components results in rapid changes in voltage and current, which results in oscillations and high-level electromagnetic interference (EMI), so the power components become a source of in...
This paper presents a detailed analysis of 1200 V Silicon Carbide (SiC) power MOSFET exhibiting different short-circuit failure mechanisms and improvement in reliability by VDS and VGS depolarization. The device robustness has undergone an incrementa...
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors. The merit of this synchronous buck converter is that it can reduce the ci...
In this study, we present the design, simulation, and implementation of a DC-DC synchronous buck converter utilizing IISB’s 2
This paper reviews state-of-the-art approaches for galvanically isolated DC-DC converters based on radio frequency (RF) micro-transformer coupling. Isolation technology, integration level and fabrication issues are analyzed to highlight the pros and...
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