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Article

Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET

Institute of Control and Industrial Electronics, Warsaw University of Technology, 00-662 Warsaw, Poland
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Author to whom correspondence should be addressed.
Academic Editor: Edris Pouresmaeil
Appl. Sci. 2021, 11(5), 2210; https://doi.org/10.3390/app11052210
Received: 14 January 2021 / Revised: 20 February 2021 / Accepted: 26 February 2021 / Published: 3 March 2021
(This article belongs to the Special Issue Power Converters: Modeling, Control, and Applications)
This article discusses an active gate driver for a 1.7 kV/325 A SiC MOSFET module. The main purpose of the driver is to adjust the gate voltage in specified moments to speed up the turn-on cycle and reduce the amount of dissipated energy. Moreover, an adequate manipulation of the gate voltage is necessary as the gate current should be reduced during the rise of the drain current to avoid overshoots and oscillations. The gate voltage is switched at the right moments on the basis of the feedback signal provided from a measurement of the voltage across the parasitic source inductance of the module. This approach simplifies the circuit and provides no additional power losses in the measuring circuit. The paper contains the theoretical background and detailed description of the active gate driver design. The model of the parasitic-based active gate driver was verified using the double-pulse procedure both in Saber simulations and laboratory experiments. The active gate driver decreases the turn-on energy of a 1.7 kV/325 A SiC MOSFET by 7% comparing to a conventional gate driver (VDS = 900 V, ID = 270 A, RG = 20 Ω). Furthermore, the proposed active gate driver lowered the turn-on cycle time from 478 to 390 ns without any serious oscillations in the main circuit. View Full-Text
Keywords: active gate driver; medium voltage; power losses; SiC MOSFET active gate driver; medium voltage; power losses; SiC MOSFET
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MDPI and ACS Style

Lasek, B.; Trochimiuk, P.; Kopacz, R.; Rąbkowski, J. Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET. Appl. Sci. 2021, 11, 2210. https://doi.org/10.3390/app11052210

AMA Style

Lasek B, Trochimiuk P, Kopacz R, Rąbkowski J. Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET. Applied Sciences. 2021; 11(5):2210. https://doi.org/10.3390/app11052210

Chicago/Turabian Style

Lasek, Bartosz, Przemysław Trochimiuk, Rafał Kopacz, and Jacek Rąbkowski. 2021. "Parasitic-Based Active Gate Driver Improving the Turn-On Process of 1.7 kV SiC Power MOSFET" Applied Sciences 11, no. 5: 2210. https://doi.org/10.3390/app11052210

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