In the semiconductor etch process, as the critical dimension (CD) decreases and the difficulty of the process control increases, in-situ and real-time etch profile monitoring becomes important. It leads to the development of virtual metrology (VM) te...
Fueled by the push for “More than Moore”, three-dimensional integrated circuits (3D ICs) have become a backbone of next-generation electronics. Their complex architectures place unprecedented demands on etching technologies, which must no...
This paper presents the results of the development of a technology for manufacturing electro-optical Mach–Zehnder modulators based on InP. The key features of the technology are the use of one SiNx double-patterned dielectric mask with two sequ...
Composite track-etched membranes (CTeMs) emerged as a versatile and high-performance class of materials, combining the precise pore structures of traditional track-etched membranes (TeMs) with the enhanced functionalities of integrated nanomaterials....
A quartz crystal resonator (QCR) is an indispensable electronic component in the field of the modern electronics industry. By designing and depositing electrodes of different shapes and thicknesses on a quartz wafer with a certain fundamental frequen...
The atomic layer technique is generating a lot of excitement and study due to its profound physics and enormous potential in device fabrication. This article reviews current developments in atomic layer technology for spintronics, including atomic la...
Due to its high hardness and high transmittance, ultra-white glass has a strong application prospect in the fields of optoelectronics industry and experimental instruments. However, because of its brittleness, it was still a difficult problem in the...
Etched ion-track polycarbonate membranes with conical nanochannels of aspect ratios of ~3000 are coated with Al2O3, TiO2, and SiO2 thin films of thicknesses between 10 and 20 nm by atomic layer deposition (ALD). By combining ion-track technology and...
This paper introduces a Coriolis mass flow and density sensor. The sensor is made using Surface Channel Technology (SCT) but with selective wet etching to create the channels. This method forms suspended microfluidic channels with a larger cross-sect...
Microstructures are playing an important role in manufacturing functional devices, due to their unique properties, such as wettability or flexibility. Recently, various microstructured surfaces have been fabricated to realize functional applications....
The success of acid stimulation in tight carbonate reservoirs relies on the formation of non-uniform etching on fracture walls. However, existing research on the influence of the fracture surface morphology on non-uniform etching and fracture conduct...
Micro-opto-electromechanical systems (MOEMSs) are a new class of integrated and miniaturized optical systems that have significant applications in modern optics. However, the integration of micro-optical elements with complex morphologies on existing...
Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morpho...
This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten via...
Control over spatial distributions and patterns of individual neurons and their neurites provides an essential tool for studying the meaning of neuronal network patterns. Moreover, the complete direction control of synaptic connections between cells...
Post-consumer poly(ethylene terephthalate) (PET) waste disposal is an important task of modern industry, and the development of new PET-based value added products and methods for their production is one of the ways to solve it. Membranes for various...
There are various fabrication methods for synthesizing nanostructures, among which plasma-based technology is strongly competitive in terms of its flexibility and friendly uses, economy, and safety. This review systematically discusses plasma techniq...
In this paper, a novel fabrication process for the realization of large, suspended microfluidic channels is presented. The method is based on Buried Channel Technology and uses a mixture of HF, HNO3, and water etchant, which has high selectivity betw...
Preparing elastic substrates as a carrier for dual-end supported nickel chromium thin film strain sensors is crucial. Wet etching is a vital microfabrication process widely used in producing microelectronic components for various applications. This a...
As one of the important technologies in the field of heterogeneous integration, transfer technology has broad application prospects and unique technical advantages. This transfer technology includes the wet chemical etching of a sacrificial layer, su...
The inner spacer module, which profoundly affects the final performance of a device, is a critical component in GAA NSFET (Gate-all-around Nanosheet Field Effect Transistor) manufacturing and necessitates systematic optimization and fundamental innov...
This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology part...
In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods. The technology consists of two technological steps applied after ALD, namel...
To fabricate miniature semiconductors of 10 nm or less, various process technologies have reached their physical limits, and new process technologies for miniaturization are required. In the etching process, problems such as surface damage and profil...
Etch pits could form on an exposed surface of a crystal when the crystal is exposed to an etching environment or chemicals. Due to different dissolution rates along various crystalline directions in a crystal, the dissolution process is anisotropic;...
Anisotropic etching of silicon in potassium hydroxide (KOH) is an important technology in micromachining. The residue deposition from KOH etching of Si is typically regarded as a disadvantage of this technology. In this report, we make use of this re...
High-aspect-ratio silicon micro- and nanostructures are technologically relevant in several applications, such as microelectronics, microelectromechanical systems, sensors, thermoelectric materials, battery anodes, solar cells, photonic devices, and...
The inductively coupled plasma reactive ion etching (ICP-RIE) is a selective dry etching method used in fabrication technology of various semiconductor devices. The etching is used to form non-planar microstructures—trenches or mesa structures,...
The quartz-crystal resonator is the core device for frequency control in modern communication systems and network technology. At present, in modern resonator blanks manufacturing, BOE solution is usually used as the etching solution, but its etching...
Femtosecond laser-induced selective etching (FLISE) is a promising technology for fabrication of a wide range of optical, mechanical and microfluidic devices. Various etching conditions, together with significant process optimisations, have already b...
This study examines the effects of varying argon (Ar) and carbon tetrafluoride (CF4) gas flow rates on the etching of monocrystalline silicon substrates using surface discharge plasma. While previous research has primarily focused on the fundamental...
Metal-assisted catalyzed etching (MACE) technology is convenient and efficient for fabricating large-area silicon nanowires at room temperature. However, the mechanism requires further exploration, particularly the dynamic effect of various ions in t...
This paper focuses on the prognosis problem in manufacturing of the electronic chips for devices. Electronic devices are of great importance at present, which are popularly applied in daily life. The basis of supporting the electronic device is the p...
For advanced semiconductor nodes, the demand for high-precision patterning of complex foundry circuits drives the widespread use of Lithography-Etch-Lithography-Etch (LELE)—a key Multiple Patterning Technology (MPT)—in Deep Ultraviolet (D...
This study concerns the development of a gap-fill process technology for isolating trench patterns. There are various gap-filling techniques in the case of trench patterns; nevertheless, a processing technology adopting the DED (deposition/etch/depos...
29 November 2024
Optical fiber sensors have emerged as a critical sensing technology across various fields due to their advantages, including high potential bandwidth, electrical isolation that is safe for utilization in electrically hazardous environments, high reli...
There are strict requirements on the surface-shape accuracy, cracks, scratches, and subsurface damage of photomask glass substrates with the advancement of photo-etching technology. In this study, photomask quartz glass substrates were etched with th...
With the growing demands for transferring large amounts of data between components in a package, it is required for advanced packaging technologies to form smaller vertical vias in the insulators. Plasma etching is one of the most widely used micro-v...
In order to design and development efficient III-nitride based optoelectronic devices, technological processes require a major effort. We propose here a detailed review focussing on the etching procedure as a key step for enabling high date rate perf...
This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etc...
Silicon carbide (SiC) is widely utilized in semiconductors, microelectronics, optoelectronics, and other advanced technologies. However, its inherent characteristics, such as its hardness, brittleness, and high chemical stability, limit the processin...
Chlorine-based plasma is widely used in key etching applications. However, while etching the wafer materials, chlorine plasma can cause damage to the internal components of the etching chamber, which adversely affects the equipment’s lifespan....
Reactive ion etching (RIE) is a promising material removal method for processing membrane diffractive optical elements and fabrication of meter-scale aperture optical substrates because of its high-efficiency parallel processing and low surface damag...
Realizing the anisotropic deep trenching of GaN without surface damage is essential for the fabrication of GaN-based devices. However, traditional dry etching technologies introduce irreversible damage to GaN and degrade the performance of the device...
The main objective of this work is to demonstrate and validate the feasibility of fabricating (Al, In) GaN laser diodes with etched facets. The facets are fabricated using a two-step dry and wet etching process: inductively coupled plasma—react...
A four-step etching method is used to prepare the double-layer cross Si microchannel structure. In the first etching step, a <100> V-groove structure is etched on (100) silicon, and the top channel is formed after thermal oxidation with the dep...
Inverted pyramid-texturing of silicon surface has been proven to have great application potential in silicon solar cells. In this paper, we utilized Ag-assisted chemical etching (Ag–ACE) technology combing with polyvinylpyrrolidone (PVP) to fabricate...
Yttrium oxyfluoride (YOF) coatings with different oxygen content were prepared using atmospheric plasma spraying (APS) technology. The etching resistance of the coatings in HBr/O2 plasma was investigated. Shifts in diffraction peaks of the X-ray diff...
Microfabrication technology with quartz crystals is gaining importance as the miniaturization of quartz MEMS devices is essential to ensure the development of portable and wearable electronics. However, until now, there have been no reports of dimens...
Gate-all-around (GAA) field-effect transistors have been proposed as one of the most important developments for CMOS logic devices at the 3 nm technology node and beyond. Isotropic etching of silicon–germanium (SiGe) for the definition of nano-scale...
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