Nanomanufacturing

In recent years, antiferromagnetic kagome materials have attracted considerable attention in condensed matter physics owing to their distinctive lattice geometry. In this work, high-quality single crystals of D019-structured Mn_2.16Ga were grown using the flux method, and their magnetotransport properties were systematically studied. Measurements of magnetization versus field (M–H), temperature-dependent magnetization (M–T), and the anomalous Hall effect confirm that the crystal undergoes a magnetic-structural transition driven by both temperature and the magnetic field. Remarkably, a coexistence of positive and negative longitudinal magnetoresistance (MR) is observed in Mn_2.16Ga. The MR shows a field-induced sign change from negative to positive. The negative MR is attributed to field-modified magnetic ordering, whereas the positive MR originates mainly from interlayer electron conduction in the kagome lattice and distortion of the in-plane triangular arrangement of Mn magnetic moments. These results offer valuable insights into the electronic and magnetic transport behavior of Mn-based antiferromagnetic single crystals.

Multimode interference photonic nanodevices have been increasingly used due to their broad functionality. In this study, we present a methodology based on machine learning algorithms for inverse design capable of providing the output port position (x-axis coordinate) and MMI region length (y-axis coordinate) for achieving higher optical signal transfer power. This is sufficient to design Multimode Interference 1 × 2, 1 × 3, and 1 × 4 nanodevices as power splitters in the wavelength range between 1350 and 1600 nm, which corresponds to the E, S, C, and L bands of the optical communications window. Using Multilayer Perceptron artificial neural networks, trained with k-fold cross-validation, we successfully modeled the complex relationship between geometric parameters and optical responses with high precision and low computational cost. The results of this project meet the requirements for photonic device projects of this nature, demonstrating excellent performance and manufacturing tolerance, with insertion losses ranging from 0.34 dB to 0.58 dB.

The motivation for this work is to study the cause and present mitigation for some challenges faced in preparing porous silicon. This enables benefiting from the appealing benefits of porous silicon that offers a wide range, simple technique for varying the refractive index. Such challenges include the refractive index values, sensitivity to oxidation, some fabrication parameters, and other factors. Additionally, highly doped p-type silicon is preferred to form porous silicon, but it causes high losses, which necessitates its detachment. We investigate some possible causes of refractive index change, especially after detaching the fabricated layers from the silicon substrate. Thereby, we could recommend simple but essential precautions during fabrication to avoid such a change. For example, the native oxide formed in the pores has a role in changing the porosity upon following some fabrication sequence. Oppositely, intrinsic stress doesn’t have a significant role. On another aspect, the effect of differing etching/break times on the filter’s responses has been studied, along with other subtle details that may affect the lateral and depth homogeneity, and thereby the process success. Solving such homogeneity issues allowed reaching thick layers not suffering from the gradient index. It is worth highlighting that several approaches have been reported; unlike these, our method doesn’t require sophisticated equipment that might not be available in every lab. To well characterize the thin films, it has been found essential that freestanding monolayers are used for this purpose. From which, the wavelength-dependent refractive index and absorption coefficient have been determined in the near infrared region (1000–2500 nm) for different fabricated conditions. Excellent fitting with the measured interference pattern has been achieved, indicating the accurate parameter extraction, even without any ellipsometry measurements. This also demonstrates the refractive index homogeneity of the fabricated layer, even with a large thickness of over 16 µm. Subsequently, multilayer structures have been fabricated and tested, showing the successful nano-manufacturing methodology.