Special Issue "Wide Bandgap Semiconductor Photonic Devices"

A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Optoelectronics and Optical Materials".

Deadline for manuscript submissions: 31 December 2020.

Special Issue Editors

Dr. Jing Zhang
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Guest Editor
Rochester Institute of Technology, New York, NY, USA
Interests: wide bandgap semiconductors; ultraviolet photonic devices; semiconductor light-emitting diodes and lasers; nanowire photonic devices
Prof. Dr. Jung-Hun Seo
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Guest Editor
University at Buffalo, The State University of New York (SUNY), Buffalo, NY, USA
Interests: wide bandgap semiconductors; synthesis, processing and devices
Special Issues and Collections in MDPI journals
Dr. Songrui Zhao
Website
Guest Editor
Department of Electrical and Computer Engineering, McGill University, QC, Canada
Interests: molecular beam epitaxy, semiconductor nanostructures, ultraviolet light emitting devices

Special Issue Information

Dear Colleagues,

The pursuit of wide bandgap semiconductor photonic devices has led to a series of fundamental breakthroughs, especially the Nobel prize winning blue light-emitting diodes (LEDs) based on group III-Nitride materials. For shorter wavelengths, wide bandgap semiconductor ultraviolet (UV) photonic devices have been explored for both photon emission and detection. For the past decades, developments have been carried out for wide bandgap semiconductor photonic devices on novel materials, device physics, active region design, and device fabrication/packaging.

 This Special Issue focuses on the most recent advances in the field of wide bandgap semiconductor photonic devices such as LEDs, lasers or photodetectors. Topics will include, but are not limited to development of advanced device physics; research of novel wide bandgap materials including 2D materials; exploration of nanostructured active regions such as nanowires or quantum dots; as well as study of non-classical device concepts. New methods of fabricating semiconductor photonic devices to achieve higher output power and quantum efficiency are also welcome.

Dr. Jing Zhang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

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Research

Open AccessArticle
AlGaN-Delta-GaN Quantum Well for DUV LEDs
Photonics 2020, 7(4), 87; https://doi.org/10.3390/photonics7040087 - 03 Oct 2020
Abstract
AlGaN-delta-GaN quantum well (QW) structures have been demonstrated to be good candidates for the realization of high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs). However, such heterostructures are still not fully understood. This study focuses on investigation of the optical properties and efficiency of the [...] Read more.
AlGaN-delta-GaN quantum well (QW) structures have been demonstrated to be good candidates for the realization of high-efficiency deep-ultraviolet (DUV) light-emitting diodes (LEDs). However, such heterostructures are still not fully understood. This study focuses on investigation of the optical properties and efficiency of the AlGaN-delta-GaN QW structures using self-consistent six-band k⸱p modelling and finite difference time domain (FDTD) simulations. Structures with different Al contents in the AlxGa1−xN sub-QW and AlyGa1−yN barrier regions are examined in detail. Results show that the emission wavelength (λ) can be engineered through manipulation of delta-GaN layer thickness, sub-QW Al content (x), and barrier Al content (y), while maintaining a large spontaneous emission rate corresponding to around 90% radiative recombination efficiency (ηRAD). In addition, due to the dominant transverse-electric (TE)-polarized emission from the AlGaN-delta-GaN QW structure, the light extraction efficiency (ηEXT) is greatly enhanced when compared to a conventional AlGaN QW. Combined with the large ηRAD, this leads to the significant enhancement of external quantum efficiency (ηEQE), indicating that AlGaN-delta-GaN structures could be a promising solution for high-efficiency DUV LEDs. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Photonic Devices)
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Open AccessArticle
Insights of Hysteresis Behaviors in Perovskite Solar Cells from a Mixed Drift-Diffusion Model Coupled with Recombination
Photonics 2020, 7(3), 47; https://doi.org/10.3390/photonics7030047 - 03 Jul 2020
Abstract
Hysteresis in perovskite solar cells is a notorious issue limiting its development in stability, reproducibility and efficiency. Ions’ migration coupled with charges’ recombination are indispensable factors to generate the hysteretic curves on the basis of experimental and theoretical calculation studies, however, the underlying [...] Read more.
Hysteresis in perovskite solar cells is a notorious issue limiting its development in stability, reproducibility and efficiency. Ions’ migration coupled with charges’ recombination are indispensable factors to generate the hysteretic curves on the basis of experimental and theoretical calculation studies, however, the underlying physical characteristics are rarely clarified. Here, a mixed electronic-ionic drift-diffusion model combined with bulk and interfacial recombination is investigated. Positive and negative ion species could drift to and accumulate at interfaces between the perovskite/transport layers, influencing internal electric potential profiles and delaying the charges’ ejection to the transport layers. The charges might recombine spontaneously or trap-assisted, reducing the total amount of electrons and holes collected in the external circuit, leading to a diminished photocurrent. Moreover, our calculations indicate that an appropriate measurement protocol is really essential to evaluate the device performance precisely and to suppress J–V hysteresis. Meanwhile, a negligible hysteretic loop could be obtained by balancing the material properties of the transport layers and restraining the ions mobility in the perovskite layer. Full article
(This article belongs to the Special Issue Wide Bandgap Semiconductor Photonic Devices)
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